• Current Photovoltaic Research
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• v.5 no.4
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• pp.113-121
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• 2017

The researches on the silicon-based thin films are being actively carried out. The silicon-based thin films can be made as amorphous, microcrystalline and mixed phase and it is known that the optical bandgap can be controlled accordingly. They are suitable materials for the fabrication of single junction, tandem and triple junction solar cells. It can be used as a doping layer through the bonding of boron and phosphorus. The carbon and oxygen can bond with silicon to form a wide range of optical gap. Also, The optical gap of hydrogenated amorphous silicon germanium can be lower than that of silicon. By controlling the optical gaps, it is possible to fabricate multi-junction thin film silicon solar cells with high efficiencies which can be promising photovoltaic devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1192-1198
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• 2004

Hole transporting polymer(poly［N-(p-diphenylamine)phenylmethacrylamide］, PDPMA) was doped with nile red dye at various concentrations to study the influence of doping on the energy transfer during light emitting processes. Organic LEDs composed of ITO/blend(PDPMA -nile red)/ Alq$_3$/Al as well as thin films of blend(PDPMA -nile red)/ Alq$_3$ were manufactured for investigating photoluminescence, electroluminescence, and current-voltage characteristics. Atomic Force Microscopy was also used to observe surface morphology of the blend films. It was found that such doping. significantly influences the efficiency of the energy transfer from the Alq$_3$ layer to blended layer and the optical/electrical properties could be optimized by choosing the right concentration of the dye molecule. The results also showed a interesting correlation with the morphological aspect, i.e. the optimum luminescence at the concentration with the least surface roughness. When the concentration of nile red was 0.8 wt%, the maximum energy transfer could be achieved.

• Transactions on Electrical and Electronic Materials
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• v.11 no.1
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• pp.37-41
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• 2010

The authors investigated the photoluminescence (PL) and the electron paramagnetic resonance (EPR) from an magnesium (Mg)-doped GaN thin film with a delta-doped layer. The regularly doped sample shows a PL peak at 2.776 eV for the as-grown sample, and the peak shifts to 2.904 eV and increases in intensity for the annealed sample. The delta-doped sample also shows the same PL peak as does the regularly doped sample. However, only the annealed delta-doped layer shows a sharp EPR with a small isotropic Lande g-factor, $g_{II}$, of 2.029. This resonance is attributed to the delta-doped layer, which forms a hole-bound Mg-N atomic structure instead of the $Mg_{Ga}-V_N$ defect complex, indicating that the delta-doped sample was not optically activated to form PL centers but was instead electrically activated to form a hole-bound state.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.107-113
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• 2009

In order to improve air stability, we proposed a new active layer of an organic TFT by synthesizing P3HT/POSS conjugated polymer. P3HT/POSS OTFTs with the various P3HT/POSS volume ratios were fabricated and characterized. With the P3HT/POSS volume ratio of 1:1, we achieved the field-effect mobilities of ${\sim}1.19{\times}10^{-3}\;cm^2/v{\cdot}sec$ in the saturation region and the current on/off ratio of ${\sim}2.51{\times}10^2$. The resulting current on-off ratio was much higher than that of the P3HT-based OTFTs and resulted from the dramatic decrease of the off-current. Since the off-current can be reduced by preventing oxygen in atmosphere from doping the P3HT/POSS active layers, this new active layer shows its ability to avoid oxygen doping in atmosphere. Therefore, the improvement of the air stability can be achieved by employing the P3HT/POSS active layers.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.118-118
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• 2011

The Nano-Floating Gate Memory(NFGM) devices with ZnO:Cu thin film embedded in Al2O3 and AlOx-SAOL were fabricated and the electrical characteristics were evaluated. To further improve the scaling and to increase the program/erase speed, the high-k dielectric with a large barrier height such as Al2O3 can also act alternatively as a blocking layer for high-speed flash memory device application. The Al2O3 layer and AlOx-SAOL were deposited by MLD system and ZnO:Cu films were deposited by ALD system. The tunneling layer which is consisted of AlOx-SAOL were sequentially deposited at $100^{\circ}C$. The floating gate is consisted of ZnO films, which are doped with copper. The floating gate of ZnO:Cu films was used for charge trap. The same as tunneling layer, floating gate were sequentially deposited at $100^{\circ}C$. By using ALD process, we could control the proportion of Cu doping in charge trap layer and observe the memory characteristic of Cu doping ratio. Also, we could control and observe the memory property which is followed by tunneling layer thickness. The thickness of ZnO:Cu films was measured by Transmission Electron Microscopy. XPS analysis was performed to determine the composition of the ZnO:Cu film deposited by ALD process. A significant threshold voltage shift of fabricated floating gate memory devices was obtained due to the charging effects of ZnO:Cu films and the memory windows was about 13V. The feasibility of ZnO:Cu films deposited between Al2O3 and AlOx-SAOL for NFGM device application was also showed. We applied our ZnO:Cu memory to thin film transistor and evaluate the electrical property. The structure of our memory thin film transistor is consisted of all organic-inorganic hybrid structure. Then, we expect that our film could be applied to high-performance flexible device.----못찾겠음......

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.207-210
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• 2005

In order to investigate the influence of the homo buffer layer on the microstructure of the ZnO thin film, undoped ZnO buffer layer were deposited on sapphire (0001) substrates by ultra high vaccum pulsed laser deposition (UHV-PLD) and molecular beam eiptaxy (MBE). After high temperature annealing at $600^{\circ}C$ for 30min, undoped ZnO buffer layer was deposited with various oxygen pressure (35~350mtorr). On the grown layer of undoped ZnO, Arsenic-doped(l, 3wt%) ZnO layers were deposited by UHV-PLD. The optical property of the ZnO was analyzed by the photoluminescence (PL) measurement. From $\Theta-2\Theta$ XRD analysis, all the films showed strong (0002) diffraction peak, and this indicates that the grains grew uniformly with the c-axis perpendicular to the substrate surface. Field emission scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO were varied with oxygen pressure, arsenic doping level, and the deposition method of undoped ZnO buffer layers. The films became denser and smoother in the cases of introducing MBE-buffer layer and lower oxygen pressure during As-doped ZnO deposition. Higher As-doping concentration enhanced the columnar-character of the films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.23-28
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• 2006

In this paper, breakdown voltage and on-resistance characteristics of the surface doped SOI RESURF LDMOSFET were investigated as a function of surface doping depth. In order to verify the variation of characteristics, two-dimensional device simulation was carried out. Breakdown voltage of the proposed structure is varied from $73 {\~}138V$ while surface doping depth varied from $0.5{\~}2.0{\mu}m$. And on-resistance is decreased from $0.18{\~}0.143{\Omega}/cm^2$ while surface doping depth increased from $0.5 {\~}2.0{\mu}m$. Maximum breakdown voltage of the proposed structure is 138 V at $1.5{\mu}m$ depth of surface doping, yielding $22.1\%$ of improvement of breakdown voltage in comparison with that of the conventional SOI RESURF LDMOSFET with same epi-layer concentration. On-resistance characteristic is also improved about $21.7\%$.

• Korean Journal of Materials Research
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• v.18 no.5
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• pp.272-276
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• 2008

In submicron MOSFET devices, maintaining the ratio between the channel length (L) and the channel depth (D) at 3 : 1 or larger is known to be critical in preventing deleterious short-channel effects. In this study, n-type SOI-MOSFETs with a channel length of $0.1\;{\mu}m$ and a Si film thickness (channel depth) of $0.033\;{\mu}m$ (L : D = 3 : 1) were virtually fabricated using a TSUPREM-4 process simulator. To form functioning transistors on the very thin Si film, a protective layer of $0.08\;{\mu}m$-thick surface oxide was deposited prior to the source/drain ion implantation so as to dampen the speed of the incoming As ions. The p-type boron doping concentration of the Si film, in which the device channel is formed, was used as the key variable in the process simulation. The finished devices were electrically tested with a Medici device simulator. The result showed that, for a given channel doping concentration of $1.9{\sim}2.5\;{\times}\;10^{18}\;cm^{-3}$, the threshold voltage was $0.5{\sim}0.7\;V$, and the subthreshold swing was $70{\sim}80\;mV/dec$. These value ranges are all fairly reasonable and should form a 'magic region' in which SOI-MOSFETs run optimally.

• Bulletin of the Korean Chemical Society
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• v.35 no.4
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• pp.1067-1072
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• 2014

In this study, we report a new approach for $Mn_3O_4$-graphene nanocomposite by ex situ method. This nanocomposite shows two-dimensional aggregation of nanoparticle, and doping effect by decorated manganese oxide ($Mn_3O_4$), as well. The graphene film was made through micromechanical cleavage of graphite on the $SiO_2/Si$ wafer. Manganese oxide ($Mn_3O_4$) nanoparticle with uniform cubic shape and size (about $5.47{\pm}0.61$ nm sized) was synthesized through the thermal decomposition of manganese(II) acetate, in the presence of oleic acid and oleylamine. The nanocomposite was obtained by self-assembly of nanoparticles on graphene film, using hydrophobic interaction. After heat treatment, the decorated nanoparticles have island structure, with one-layer thickness by two-dimensional aggregations of particles, to minimize the surface potential of each particle. The doping effect of $Mn_3O_4$ nanoparticle was investigated with Raman spectra. Given the upshift in positions of G and 2D in raman peaks, we suggest that $Mn_3O_4$ nanoparticles induce p-doping of graphene film.

• Progress in Superconductivity and Cryogenics
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• v.20 no.2
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• pp.24-28
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• 2018

To understand the effects of Cd substitution for Cu, $(Pb_{0.5}Cu_{0.5-x}Cd_x)Sr_2(Ca_{0.7}Y_{0.3})Cu_2O_z$ (x = 0 ~ 0.5) compounds were synthesized and the structural and superconducting properties of the compounds were characterized. Resistivity data revealed that superconducting transition temperature rises initially up to x = 0.25 and then decreases as the Cd doping content increases. Room-temperature thermoelectric power decreases at first up to x = 0.25 and then increases with higher Cd doping content, indicating that the change in $T_c$ is mainly caused by the change in the hole concentration on the superconducting planes by the Cd doping. The non-monotonic dependence of the lattice parameters and the transition temperature with Cd doping content is discussed in connection with the possible formation of $Pb^{+2}$ ions and the removal of excess oxygen caused by Cd substitution in the charge reservoir layer. A correlation between transition temperature and c/a lattice parameter ratio was observed for the $(Pb_{0.5}Cu_{0.5-x}Cd_x)Sr_2(Ca_{0.7}Y_{0.3})Cu_2O_z$ system.