• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.457-458
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• 2009

In this work, transparent conducting Al-doped zinc oxide (AZO) films were prepared on Coming glass substrate by RF magnetron sputtering using an Al-doped ZnO target (Al: 2 wt.%) at room temperature and all films were deposited with athickness of 150 nm. We investigated the effects of the post-annealing temperature and the annealing ambient on structural, electrical and optical properties of AZO films. The films were annealed at temperatures ranging from 300 to $500^{\circ}C$ in steps of $100^{\circ}C$ using rapid thermal annealing equipment in oxygen. The thickness of the film was observed by field emission scanning electron microscopy (FE-SEM) and grain size was calculated from the XRD spectra using the Scherrer equation and their electrical properties were investigated using a hole measurement and the reflectance of AZO films was investigated by UV-VIS spectrometry.

• Journal of Powder Materials
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• v.15 no.4
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• pp.302-307
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• 2008

$Gd_2O_3$-doped $CeO_2$(GDC) solid solutions have been considered as a promising materials for electrolytes in intermediate-temperature solid oxide fuel cells. In this study, the nano-sized GDC powder with average panicle size of 69nm was prepared by a high energy ball milling process and its sintering behavior was investigated. Heat-treatment at $1200^{\circ}C$ of nano-sized GDC powder mixture led to GDC solid-solution. The enhanced densification over 96% of relative density was obtained after sintering at $1300^{\circ}C$ for 2h. It was found that the sinterability of GDC powder could be significantly improved by the introduction of a high energy ball milling process.

• Korean Journal of Optics and Photonics
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• v.21 no.4
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• pp.139-145
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• 2010

A complete modeling of erbium-doped Bismuth-oxide fibers with a high doping concentration is presented. A 6-level amplifier system that incorporated clustering-induced concentration quenching, cooperative upconversion, pump excited state absorption (ESA), and signal ESA, was adopted for the modeling. The accuracy of the modeling was verified by comparing the calculated gain and noise figure with experimentally obtained ones.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.2
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• pp.97-105
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• 1985

Phosphorus and boron diffusion from doped PECVD oxide films into silicon have been studied. CVD PSG was also prepared to parallelly compare the diffusion characteristics of CVD PSG with that in PECVD PSG, The phosphorus diffusion experiments were performed in N2 and O2 ambient at the temperatures of 100$0^{\circ}C$, 105$0^{\circ}C$ and 110$0^{\circ}C$ The parameters of boron diffusion have been investigated from the doped film prepared by changing B2 H6 flow rate and deposition temperature. The diffusivities and diffusion profiles of the dopant into silicon were calculated by applying Barry's model using the measured parameters such as diffusion depth and surface concentration.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.3 no.3
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• pp.161-165
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• 2002

Ge-doped rnulticomponent oxide glasses were prepared by a conventional melting method. The change of micro structure in glasses was investigated by using PL (photoluminescence) and ESR (electron spin resonance). Before UV irradiation, the PL intensity increased according to germanium contents, but decreased the intensity as soon as UV irradiation. A changed property was recovered near it original properties when it was annealed. These photodarkening and thermal bleaching effect were observed by ESR intrument. These effect did not change the glass phase but vary only change of micro structure.

• Journal of the Korean Vacuum Society
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• v.3 no.3
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• pp.360-367
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• 1994

Si2H6PH3 혼합기체를 사용하여 증착된 in-situ P-doped 비정질 실리콘과 SiH4 기체를사용하여 증착한후에 As+ 이온주입에 의해 도핑시킨 다결정 실리콘 박막을 하부 전극으로 하는 캐패시터를 형성 하였다. 여기서 유전박막층은 자연산화막 화학증착된 실리콘질화막 및 질화막의 산화에 의해 형성된 O-N-O 구조를 갖는 것이었다. 두 종류의 하부전극에 따른 캐패시터의 전기적 특서을 조사하였다. 전기 적 특성으로는 정전용량, 누설전류, 절연파괴전압 및 TDDB 등이었다. 이 가운데 정전용량, 누설전류 및 절연파괴전압은 하부전극에 따라 큰 차이를 보이지않았다. 그러나 음의 전장하에서의 TDDB 특성은 in-situ P-doped 비정실 실리콘이 하부전극인 캐패시터가 As+ 이온 주입실리콘이 하부전극인 것에 비해 더우수하였다. 이와 같은 TDDB 특성의 차이는 하부전극 실리콘의 integrity 차이로 인한 자연산화막의 결함 정도의 차이에 기인하는 것 같다. 이를 뒷받침하는 것으로 투과전자현미경 단면사진으로 확인하였 다. Shallow junction을 유지하는데도 in-situ P-doped 비정실 실리콘은 만족할 만한 결과를 보이며 박 막자체의 면저항값도 낮출 수 있어 초고집적 회로의 캐패시터 전극으로서 이용될 수 있는 것으로 평가 되었다.

• Current Photovoltaic Research
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• v.5 no.4
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• pp.135-139
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• 2017

We fabricated two different transparent conducting oxide thin films of ZnO doped with Ga ($Ga_2O_3$ 0.9 wt%) as well as Al ($Al_2O_3$ 2.1 wt%) (GAZO) and ZnO doped only with Al ($Al_2O_3$ 3 wt%) (AZO). It was investigated how it affects the moisture resistance of the transparent electrode. In addition, $Cu(In,Ga)Se_2$ thin film solar cells with two transparent oxides as front electrodes were fabricated, and the correlation between humidity resistance of transparent electrodes and device performance of solar cells was examined. When both transparent electrodes were exposed to high temperature distilled water, they showed a rapid increase in sheet resistance and a decrease in the fill factor of the solar cell. However, AZO showed a drastic decrease in efficiency at the beginning of exposure, while GAZO showed that the deterioration of efficiency occurred over a long period of time and that the long term moisture resistance of GAZO was better.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.408-411
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• 2018

We fabricated highly flexible Mn-doped $SnO_2$ (MTO)/Ag/MTO/polydimethylsiloxane (PDMS)/MTO multilayer transparent conducting films. To reduce refractive-index mismatching of the MTO/Ag/MTO/polyethylene terephthalate (PET), index-matching layers were inserted between the oxide-metal-oxide-structured films and the PET substrate. The PDMS layer was deposited by spin-coating after adjusting the mixing ratio of PDMS and hexane. We investigated the effects of the index-matching layer on the color and reflectance differences with different PDMS dilution ratios. As the dilution ratio increased from 1:100 to 1:130, the color difference increased slightly, while the reflectance difference decreased from 0.62 to 0.32. The MTO/Ag/MTO/PDMS/MTO film showed a transmittance of 87.18~87.68% at 550 nm. The highest value of the Haacke figure of merit was $47.54{\times}10^{-3}{\Omega}^{-1}$ for the dilution ratio of 1:130.

• Nuclear Engineering and Technology
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• v.55 no.6
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• pp.2166-2171
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• 2023

In the present study, six silicone rubber doped by tellurium borate oxides were fabricated using the casting method. The densities of the fabricated silicon rubber-doped by tellurium borate oxides samples were measured using the Archimedes Method. Moreover, the linear attenuation coefficient of silicone rubber doped tellurium borate oxides samples was evaluated experimentally using the hyper pure germanium, and the recorded linear attenuation coefficient values were affirmed using the theoretical Phy-X program. The experimental measurements were performed using the narrow beam transmission method with radioactive isotopes Am-241, Cs-137, and Co-60 with energies of 59, 661, 1173, and 1332 keV. The linear attenuation coefficient values showed an enhancement by 4.73 times, 1.20 time, 1.17, time, and 1.17 time, respectively at gamma photon energies of 59, 661, 1173, and 1332 keV, when the TeO₂ concentration increased in the fabricated composites from 0 to 50 wt%. The enhancement of the linear attenuation coefficient values has a positive effect on the transmission rate values where the half-value thickness and transmission rate were decreased accompanied by an increase in the RPE.

• The Korean Journal of Ceramics
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• v.3 no.2
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• pp.134-138
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• 1997

$Dy^{3+}-(or Tm^{3+}-)$ doped $Ga_2O_3 \;and\; ZnGa_2O_4$ phosphors were prepared using the solid state reaction method to investigate their photoluminescent characteristics. Under 254 nm excitation, $Dy^{3+}-doped Ga2_O_3$ exhibited two emission bands of 460~505nm and 570~600nm. On the other hand, $Dy^{3+}-(or Tm^{3+}-)$ doped $ZnGa_2O_4 $phosphors exhibited a broad-band emission extending from 330 nm to 610 nm, peaking at about 430 nm(or 370 nm). In this study, an emission peak shift of nealy 50 nm towards longer wavelength region was observed with $Dy^{3+}$ doping in the $ZnGa_2O_4 $.