• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.4
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• pp.377-380
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• 1999

Erbium (Er) doped $LiNbO_{3}(Er:LiNbO_{3})$ single crystal fibers were grown free of creacks along the c-axis by micro-pulling down method. The $Er^{3+}$ concentration was distributed homogeneously along the growth axis. The samples for optical characterization were cut from as-grown single crystal fibers and polished. When the 980nm light was incident on the sample, upconversion phenomena were observed at the green range of wavelength 510~570nm. In addition, the intensity of upconversion was remarkably increased by increasing the concentration of $Er_{2}O_{3}$ dopant in as-grown $Er:LiNbO_{3}$ crystals.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1095-1096
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• 2006

When $Y_2O_3$ was added to Ti-excess $BaTiO_3$ ((Ba+Y)/Ti =1), the area occupied by $Y^{3+}$ ion was confirmed by its microstructure development, electrical conductivity behavior and lattice constant. Grain growth inhibition was observed when the content of donor dopant exceeded a critical value ($x{\approx}.0.01$) in $BaTiO_3+x(0.5Y_2O_3+TiO_2)$ system. A donor-doped behavior was observed at various Y contents ($0.2\sim3.0$ mol% Y) when $Y_2O_3$ was added to $TiO_2$-excess $BaTiO_3$. As Y content was increased, (002) and (200) peaks shifted to higher angles and the lattice constant (a and c axis) decreased gradually.

• Journal of the Korean Electrochemical Society
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• v.1 no.1
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• pp.52-54
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• 1998

Polypyrrole (PPy), Poly(N-methyl Pyrrole) (PMPy) and Poly(N-phenyl Pyrrole) (PPhPy) films in acetonitrile (Af and propylene carbonate (PC) have been compared focusing on their different ion and solvent transport behaviors. During the redox reaction of PPy films, cation, anion, and solvent take part in mass transport. Whereas during the redox reaction of PMPy and PPhPy films, anion and solvent transport are dominant but cation transport is negligible. In addition, solvent transport occurs in the same direction with cation transport for PPy films. On the other hand, solvent transport occurs in the opposite direction to anion transport for PMPy films, and it changes its amount and direction with the kind of the dopant anion and the solvent used at electropolymerization for PPhPy films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.42-45
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• 2001

(Ba$_{0.6-x}$Sr$_{0.4}$Ca$_{x}$)TiO$_3$+yZrO$_2$wt% (x=1.10, 0.15, 0.20, y=0.5~3.0) specimens were fabricated by the mixed and ZrO$_2$ contents were studied. All BSCT specimens contents were studied. All BSCT specimens showed dense and homogeneous structure without the presence of the seconds phase. The Curie temperature and the dielectric constant at room temperature decreased with increasing the Ca/Ba composition ratio and ZrO$_2$ content. The BSCT(50/40/10) specimens showed the excellent tunability property. And the tunability were increased with increasing the contents of ZrO$_2$./TEX>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.296-297
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• 2006

A conventional oxide method was used to fabricate $Ba_{0.5}Sr_{0.5}TiO_3$(BST) ceramic plates doped by MgO from 10 to 60 wt%. The structural and dielectric properties of BST were investigated as a fraction of MgO dopant concentration. The dielectric properties of the MgO doped BST were strongly dependent on the MgO contents. The dielectric constant and dielectric loss of MgO doped BST decreased with increasing MgO content.

• Journal of the Korean Society for Heat Treatment
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• v.4 no.4
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• pp.34-43
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• 1991

A small amount of misch metal and/or Zr was added as a dopant to 70.5wt----Cu-26wt----Zn-3.5wt----Al shape memory alloy in order to study the effect of grain refinement and heat treatments on the transformation behavior, stabilization of martensite, and shape memory ability. It was found that the addition of misch metal and Zr was very effective for reducing the grain size. The fracture mode has been changed from intergranular brittle fracture to ductile fracture with void formation and coalescence by the addition of misch metal and Zr. Aging of the ${\beta}$-phase decreases the $M_s$ temperature, but that of the martensite phase increases the $A_s$ temperature. The hysteresis of transformation temperature ${\Delta}T(A_s-M_s)$ has an increasing tendancy by grain refinement. The crystal structure of martensite was identified as monoclinic structure. As the grain size decreased, martensite stabilization more easily occured and the shape, memory ability has been reduced by the grain size refined.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.296-299
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• 2003

In this paper, $0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3$ ceramics were fabricated by the mixed-oxide method. The sintering temperature and time were $1230^{\circ}C$ and 2[hr], respectively. The structural, dielectric and piezoelectric properties with addition of NiO were studied. The crystal structure of a specimen was rhombohedral. As a result of SEM, the average grain size were decreased with increasing the contents of NiO. But the grains of the specimens doped with 0.4wt% NiO were increased, due to deposits of excess NiO at grain boundaries in the liquid phase. Relative dielectric constant and dielectric loss of the specimen doped with 0.1wt% NiO were 701 and 0.026, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.124-129
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• 2007

Dielectric and piezoelectric properties of $0.57Pb(Sc_{1/2}Nb_{1/2})O_{3}-0.43PbTiO_{3}$, which is the morphotropic phase boundary composition for the PSN-PT system, were investigated as a function of $Fe_{2}O_{3},\;Nb_{2}O_{5}\;and\;MnO_{2}$ addition 0 wt% to 0.9 wt%. The maximum dielectric constant of ${\varepsilon}_{33}/{\varepsilon}_{o}=2054$ and the minimum dielectric loss of $tan{\delta}=0.37\;%$ at room temperature were obtained at 0.1 wt% of $Fe_{2}O_{3}$ and 0.5 wt% of $MnO_{2}$ addition, respectively. With addition of 0.5 wt% $Nb_{2}O_{5}$ and $0.5\;wt%\;MnO_{2}$, the electromechanical coupling factor $k_{p}$ and mecanical quality factor $Q_{m}$ were significantly increased, respectively. The maximum electromechanical coupling factor $k_{p}=61.5\;%$ was obtained by addition of $Nb_{2}O_{5}$ and high mechanical quality factor $Q_{m}=919$ was obtained by addition of $MnO_{2}$. The $Q_{m}(=919)$ value is 3.3 times larger than that of non-doped 0.57PSN-0.43PT ceramics.

• Korean Journal of Materials Research
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• v.16 no.4
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• pp.257-263
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• 2006

We have investigated the effect of silver added to Cu films on the microstructure evolution, resistivity, surface morphology, stress relaxation temperature, and adhesion properties of Cu(Ag) alloy thin films deposited on Mo glue layer upon annealing. In addition, pure Cu films deposited on Mo has been annealed and compared. The results show that the silver in Cu(Ag) thin films control the grain growth through the coarsening of its precipitates upon annealing at $300^{\circ}C{\sim}600^{\circ}C$ and the grain growth of Cu reveals the activation energy of 0.22 eV, approximately one third of activation energy for diffusion of Ag dopant along the grain boundaries in Cu matrix (0.75 eV). This indicates that the grain growth can be controlled by Ag diffusion along the grain boundaries. In addition, the grain growth can be a major contributor to the decreased resistivity of Cu(Ag) alloy thin films at the temperature of $300^{\circ}C{\sim}500^{\circ}C$, and decreases the resistivity of Cu(Ag) thin films to $1.96{\mu}{\Omega}-cm$ after annealing at $600^{\circ}C$. Furthermore, the addition of Ag increases the stress relaxation temperature of Cu(Ag) thin films, and thus leading to the enhanced resistance to the void formation, which starts at $300^{\circ}C$ in the pure Cu thin films. Moreover, Cu(Ag) thin films shows the increased adhesion properties, possibly resulting from the Ag segregating to the interface. Consequently, the Cu(Ag) thin films can be used as a metallization of advanced TFT-LCDs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.979-986
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• 2003

Sintering behavior and electrical properties of CeO$_2$ system were investigated as a function of the amount of Gd:$_2$O$_3$, and Sm$_2$O$_3$, addition. Doped CeO$_2$ consisted of a homogeneous solid solution of the cubic fluorite structure within the amount of addition from 0 mol% to 15 mol%. Grain growth rate of Gd$_2$O$_3$-doped CeO$_2$ was much smaller than that of pure CeO$_2$, while densification rate was considerably larger. Thus doped CeO$_2$ showed a higher density than pure CeO$_2$. The electrical conductivity of Ce$_1$-$_{x}$Sm$_{x}$O$_1$-$_{x}$/2 was increased up to x = 0.2. However, with further increasing dopant concentrations, the magnitude of the conductivity was found to decrease remarkably. The ionic conductivity value obtained at $700^{\circ}C$ for 10 mol% Sm$_2$O$_3$-doped CeO$_2$ electrolyte was 4.6${\times}$10$^{-2}$ S$.$$cm^{-1}$ /.EX> /.