• Kyungpook Mathematical Journal
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• v.61 no.1
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• pp.11-21
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• 2021

We study the structure of rings whose factor rings modulo nonzero proper ideals are right duo; such rings are called right FD. We first see that this new ring property is not left-right symmetric. We prove for a non-prime right FD ring R that R is a subdirect product of subdirectly irreducible right FD rings; and that R/N∗(R) is a subdirect product of right duo domains, and R/J(R) is a subdirect product of division rings, where N∗(R) (J(R)) is the prime (Jacobson) radical of R. We study the relation among right FD rings, division rings, commutative rings, right duo rings and simple rings, in relation to matrix rings, polynomial rings and direct products. We prove that if a ring R is right FD and 0 ≠ e2 = e ∈ R then eRe is also right FD, examining that the class of right FD rings is not closed under subrings.

• ETRI Journal
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• v.27 no.1
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• pp.110-113
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• 2005

The resilient packet ring (RPR) is a data optimized ring network, where one of the key issues is on load balancing for competing streams of elastic traffic. This paper suggests three efficient traffic loading algorithms on the RPR. For the algorithms, we evaluate their efficiency via analysis or simulation.

• Bulletin of the Korean Mathematical Society
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• v.59 no.4
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• pp.853-868
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• 2022

We study the structure of right regular commutators, and call a ring R strongly C-regular if ab - ba ∈ (ab - ba)²R for any a, b ∈ R. We first prove that a noncommutative strongly C-regular domain is a division algebra generated by all commutators; and that a ring (possibly without identity) is strongly C-regular if and only if it is Abelian C-regular (from which we infer that strong C-regularity is left-right symmetric). It is proved that for a strongly C-regular ring R, (i) if R/W(R) is commutative, then R is commutative; and (ii) every prime factor ring of R is either a commutative domain or a noncommutative division ring, where W(R) is the Wedderburn radical of R.

• Bulletin of the Korean Mathematical Society
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• v.31 no.2
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• pp.163-165
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• 1994

Modules which satisfy the converse of Schur's lemma have been studied by many authors. In [6], R. Ware proved that a projective module P over a semiprime ring R is irreducible if and only if En $d_{R}$(P) is a division ring. Also, Y. Hirano and J.K. Park proved that a torsionless module M over a semiprime ring R is irreducible if and only if En $d_{R}$(M) is a division ring. In case R is a commutative ring, we obtain the following: An R-module M is irreducible if and only if En $d_{R}$(M) is a division ring and M is a multiplication R-module. Throughout this paper, R is commutative ring with identity and all modules are unital left R-modules. Let R be a commutative ring with identity and let M be an R-module. Then M is called a multiplication module if for each submodule N of M, there exists and ideal I of R such that N=IM. Cyclic R-modules are multiplication modules. In particular, irreducible R-modules are multiplication modules.dules.

• Kyungpook Mathematical Journal
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• v.61 no.3
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• pp.461-472
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• 2021

We study a new ring property called axis-commutativity. Axis-commutative rings are seated between commutative rings and duo rings and are a generalization of division rings. We investigate the basic structure and several extensions of axis-commutative rings.

• Proceedings of the KIEE Conference
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• 1996.07a
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• pp.559-563
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• 1996

Total 215 magnet power supplies are under operation in Pohang Light Source(PLS). Current, voltage and peak power handling capabilities of DC power supply are in the range of 21 to 643V, 45 to 850A and 0.94 to 531KW, respectively. The DC power supplies can be categoriezed as uni-polar and bipolar power. Typical required stability and ripple of uni-polar power supplies are ${\pm}0.005%$ and ${\pm}0.05%$, respectively. The bipolar power supplies should be maintained within ${\pm}0.05%$ stability and ${\pm}0.5%$ ripple. Precise measurement results show that all power supplies meet or exceed the required specifications. The long term operation reliability to be sufficient for a stable operation of the Pohang Light Source.

• Journal of Ceramic Processing Research
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• v.19 no.5
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• pp.439-443
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• 2018

The outstanding characteristics of high quality GaN single crystal substrates make it possible to apply the manufacture of high brightness light emitting diodes and power devices. However, it is very difficult to obtain high quality GaN substrate because the process conditions are hard to control. In order to effectively control the formation of GaN polycrystals during the bulk GaN single crystal growth by the HVPE (hydride vapor phase epitaxy) method, a quartz ring was introduced in the edge of substrate. A variety of evaluating method such as high resolution X-ray diffraction, Raman spectroscopy and photoluminescence was used in order to measure the effectiveness of the quartz ring. A secondary ion mass spectroscopy was also used for evaluating the variations of impurity concentration in the resulting GaN single crystal. Through the detailed investigations, we could confirm that the introduction of a quartz ring during the GaN single crystal growth process using HVPE is a very effective strategy to obtain a high quality GaN single crystal.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.152-155
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• 2011

This paper presents a comparative analysis on step and the touch voltages generated by either a sine and a ring wave voltage generator; this analysis was done as a basic study in order to develop a small and lightweight ground meter. A ring wave generator using pulsed power technology was fabricated; an experimental grounding system specified in Institute of Electrical and Electronics Engineers standards 80 and 81 was installed. The step and the touch voltages, which were measured using comparable a sine and a ring waves in terms of magnitude and frequency, were equal. Using pulsed power technology, the weight of the fabricated ring wave generator could be reduced to one-fifth of that of a sine wave generator. Consequently, if a ground meter adopts the ring wave instead of a sine wave, it will be possible to reduce the weight of a ground meter and improve the efficiency of measurement.

• Elastomers and Composites
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• v.55 no.4
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• pp.270-276
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• 2020

The long-term durability of an FKM O-ring used as parts of a hydrogen station was investigated by exposing it to high-pressure gaseous hydrogen for 1, 3, and 7 days at room temperature. Changes in its sealing force were subsequently measured at 150℃ using intermittent compression stress relaxation (CSR). No changes in the tensile properties of FKM O-ring were observed, but its initial and overall sealing forces at 150℃ significantly decreased with increasing exposure time to hydrogen gas. Microvoid formation in the FKM O-ring upon exposure to high-pressure hydrogen was minimized over time after the ring was exposed to atmospheric pressure at room temperature, which prevented changes in its tensile properties. However, applying heat accelerated FKM O-ring oxidation, which decreased its sealing force. These results indicated that identifying changes in the sealing force of rubber materials using intermittent CSR is not sufficient for monitoring changes in mechanical properties under high-pressure hydrogen atmospheres; however, it is suitable for evaluating the long-term durability of sealing materials for hydrogen station applications under similar conditions.

• Proceedings of the KIEE Conference
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• 1994.07a
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• pp.180-182
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• 1994

In an electron storage ring of Pohang Light Source (PLS), electrons lose their energy in every turn by the synchronous radiation. A high power RF amplifier is employed to compensate the electron energy that is lost by the synchronous radiation. The specification of RF amplifier is an continuous output power of 60 kW at 500.082 MHz operating frequency. The power is supplied to RF cavities in the storage ring tunnel. Total number of amplifier system currently required is three. Tile total number will be increased upto five as the operating condition of storage ring is upgraded. The RF amplifier is mainly consisted of a high voltage DC power supply, an intermediate RF power amplifier (IPA), and a klystron tube. In this article, the design of RF amplifier system and characteristics of the klystron tube will be discussed.