Controlling of the heterogeniously growing GaN polycrystals using a quartz ring in the edge during the HVPE-GaN bulk growth |
Park, Jae Hwa
(Division of Advanced Materials Science and Engineering, Hanyang University)
Lee, Hee Ae (Division of Advanced Materials Science and Engineering, Hanyang University) Park, Cheol Woo (Division of Advanced Materials Science and Engineering, Hanyang University) Kang, Hyo Sang (Division of Advanced Materials Science and Engineering, Hanyang University) Lee, Joo Hyung (Division of Advanced Materials Science and Engineering, Hanyang University) In, Jun-Hyeong (Division of Advanced Materials Science and Engineering, Hanyang University) Lee, Seong Kuk (UNIMO Photron) Shim, Kwang Bo (Division of Advanced Materials Science and Engineering, Hanyang University) |
1 | H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, Appl. Phys. Lett. 48 (1986) 353. DOI |
2 | S. Nakamura, T. Mukai, and M. Senoh, Jpn. J. Appl. Phys. 32 (1993) L16. DOI |
3 | S. Nishida, and N. Kobayashi, Phys. Status Soldi (a) 188 (2001) 113. DOI |
4 | P. Von Dollen, S. Pimputkar, and J.S. Speck, Angew. Chem. Int. Ed. 53 (2014) 13975. |
5 | K. Fujito, S. Kubo, H. Nagaoka, T. Mochizuki, H. Namita, and S. Nagao, J. Cry. Growth 311 (2009) 3011-3014. DOI |
6 | H.M. Foronda, A.E. Romanov, E.C. Young, C.A. Robertson, G.E. Beltz, and J.S. Speck, J. Appl. Phys. 120 (2016) 035104. DOI |
7 | A.P. Zhang, L.B. Rowland, E.B. Kaminsky, V. Tilak, J.C. Grande, J. Teetosv, A. Vertiatchikh, and L.F. Eastman, J. Electron. Mater. 32[5] (2003) 388-394. DOI |
8 | S. Choi, E. Heller, D. Dorsey, R. Vetury, and S. Graham, J. Appl. Phys. 133 (2013) 093510. |
9 | F.C. Wang, C.L. Cheng, Y.F. Chen, C.F. Huang, and C.C. Yang, Semicon. Sci. Technol. 22 (2007) 896-899. DOI |
10 | J.H. Park, H.E. Lee, J.H. Lee, C.W. Park, J.H. Lee, H.S. Kang, H.M. Kim, S.H. Kang, S.Y. Bang, S.K. Lee, and K.B. Shim, J. Ceram. Proc. Res. 18[2] (2017) 93-97. |
11 | Z.J. Pei, S.R. Billingsley, and S. Miura, Int. J. Mach. Tool. Manufact. 39 (1999) 1103-1116. DOI |
12 | M.T. Postek, Scanning 18 (1996) 269-274. |
13 | L. Holland, Vacuum 20[5] (1970) 175-192. DOI |
14 | D.K. Oh, S.Y. Bang, B.G. Choi, P. Maneeratanasam, S.K. Lee, J.H. Chung, J.A. Freitas Jr., and K.B. Shim, J. Cryst. Growth 356 (2012) 22-25. DOI |
15 | S.K. Lee and K.B. Shim, KR Patent No. 1015453940000, (2015). |
16 | B. Heying, X.H. Wu, S. Keller, Y. Li, D. Kapolnek, B.P. Keller, S.P. DenBaars, and J.S. Speck, Appl. Phys. Lett. 68[5] (1996) 643-645. DOI |
17 | S.S. Kushvaha, M. Senthil Kumar, K.K. Maurya, M.K. Dalai, and N.D. Sharma, AIP Advances 3 (2013) 092109. DOI |
18 | A.G. Kontos, Y.S. Raptis, N.T. Pelekanos, A. Georgakilas, E. Bellet-Amalric, and D. Jalabert, Phys. Rev. B 72 (2005) 155336. DOI |
19 | X. Liu, D. Li, X. Sun, Z. Li, Z. Li, H. Song, H. Jiang, and Y. Chen, Cryst. Eng. Comm. 16 (2014) 8058-8063. DOI |
20 | W. Grieshaber, E.F. Schubert, and I.D. Goepfert, J. Appl. Phys. 80[8] (1996) 4615-4620. DOI |
21 | S.R. Xu, Y. Hao, J.C. Zhang, Y.R. Cao, X.W. Zhou, L.A. Yang, X.X. Ou, K. Chen, and W. Mao, J. Cryst. Growth 312 (2010) 3521-3524. DOI |
22 | H. Gu, G. Ren, T. Zhou, F. Tian, Y. Xu, Y. Zhang, M. Wang, Z. Zhang, D. Cai, J. Wang, and K. Xu, J. Alloys Compd. 674 (2016) 218. DOI |
23 | L. Li, J. Yu, Z. Hao, L. Wang, J. Wang, Y. Han, H. Li, B. Xiong, C. Sun, and Y. Luo, Comput. Mater. Sci. 129 (2017) 49. DOI |