• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.8
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• pp.1753-1758
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• 2012

This paper introduces analog FIR filters based on a distributed amplifier and analyzes the proposed filter's characteristics. A simple design method of an analog FIR filter based on the digital filter design technique is also introduced. The proposed analog FIR filters are a moving average(MA) and a comb type filters with no multiplier. This simple structures of the proposed filters may enable to operate at multi-GHz frequency range and applicable to combine a filter and an amplifier of RF system. The proposed analog FIR filters were implemented with standard $0.18{\mu}m$ CMOS technology. The designed GHz analog FIR filters are simulated by Cadence Spectre and compared to the results of digital FIR filters obtained from MATLAB simulations. From the simulation results, the characteristics of the proposed analog FIR filters are fairly well matched with those of digital FIR filters.

• Journal of electromagnetic engineering and science
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• v.17 no.2
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• pp.105-107
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• 2017

The self-biasing circuit through a feedback resistor is applied to a gallium nitride (GaN) distributed power amplifier (PA) monolithic microwave circuit (MMIC). The self-biasing circuit is a useful scheme for biasing depletion-mode compound semiconductor devices with a negative gate bias voltage, and is widely used for common source amplifiers. However, the self-biasing circuit is rarely used for PAs, because the large DC power dissipation of the feedback resistor results in the degradation of output power and power efficiency. In this study, the feasibility of applying a self-biasing circuit through a feedback resistor to a GaN PA MMIC is examined by using the high operation voltage of GaN high-electron mobility transistors. The measured results of the proposed GaN PA are the average output power of 41.1 dBm and the average power added efficiency of 12.2% over the 6-16 GHz band.

• Proceedings of the Optical Society of Korea Conference
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• 2002.11a
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• pp.66-67
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• 2002

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.339-341
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• 2004

We obtained ultra-short single pulse with an energy of 80 of from self Q-switched Distributed Feedback Dye Laser. Using three stages of amplifiers constructed by two stages of dye amplifiers and one bethune cell amplifier, we obtained high power pulse and second harmonic generation with BBO in ultraviolet region.

• Journal of the Korean Institute of Telematics and Electronics
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• v.3 no.2
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• pp.10-17
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• 1966

A method by which solutions of the differential equations of any other distributed circuits can be obtained is described when the solution of the differential equation of an R-C distributed amplifier is known. A graphical method of transforming any R-C ditributed circuit into an equivalent circuit which has a constant R(x)$cdot$C(x) was also obtained. The theoretical verification of this method is possible. For simplicity, any R-C distributed circuit can be transformed into an equivalent circuit which is a distributed circuit of either constant R(x) or C(x). Using this equivalent circuit and considering a lumped circuit, an approximate analysis and synthesis can be made simply.

• Journal of Electrical Engineering and Technology
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• v.1 no.4
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• pp.409-413
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• 2006

This paper deals with the design and testing of a simulator system for microgrids with distributed generations. This system is composed of a Real Time Digital Simulator (RTDS) and a power amplifier. The RTDS parts are operated for real time simulation for the microgrid model and the distributed generation source model. The power amplifiers are operated fur amplification of the RTDS's simulated output signal, which is a node voltage of the microgrid and distributed generation source. In this paper, we represent an RTDS system design, specification and test results of a power amplifier and simulation results of a PV (Photovoltaic) system and wind turbine system. The proposed system is applicable for development and performance testing of a PCS (Power Conversion System) for renewable energy sources.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.11
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• pp.1019-1022
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• 2016

In this paper, a 2~16 GHz GaN wideband power amplifier MMIC s designed and fabricated using the nonuniform power amplifier design technique that utilizes drain shunt capacitors to simultaneously provide each transistor with the optimum load impedance and phase balance between input and output transmission lines. The power amplifier MMIC chip that is fabricated using the $0.25{\mu}m$ GaN HEMT foundry process of Win Semiconductors occupies an area of $3.9mm{\times}3.1mm$ and shows a linear gain of larger than 12 dB and an input return loss of greater than 10 dB. Under a continuous-wave mode, it has a saturated output power of 36.2~38.5 dBm and a power-added efficiency of about 8~16 % in 2 to 16 GHz.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.842-844
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• 2012

This paper introduces a 5GHz FIR filter low noise amplifier (LNA) based on a distributed amplifier and analyzes the its characteristics. The proposed FIR filter-LNA has the MA(moving average) filter characteristic which improves the frequency selectivity of the amplifier. Proto-type circuits with FR4 and ${\varepsilon}_r=10.2$ PCB have been realized and simulated using ADS (Advanced Design System). The simulation results verified that the designed LNA had a gain of about 10dB and the frequency characteristic of the MA FIR filter. It is expected that the proposed FIR filter LNA can be applicable to the various applications using an amplifier and a filter in RF systems.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.34 no.6B
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• pp.568-574
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• 2009

320km optical transmission link for 128 channel DWDM (dense wavelength-division-multiplexing) signals is simulated and fabricated. An optical fiber amplifier for the link is composed of a distributed Raman amplifier and dual C/L-band EDFAs which are optimized for the performances of an optical amplifier obtained from the simulation. Gain and NF of the optimized EDFAs are above 19dB and below 7.5dB, respectively. The resultant OSNRs (optical signal to noise ratios) of the link are average 25dB on each band.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.1
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• pp.51-56
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• 1984

This paper describes the analysis and design of a GaAs FET distributed amplifier connecting a series capacitor to get a super wide bandwidth by reducing the gate line attenuation constant. In this approach a design example with a 300$\mu$ gate length FET devices is presented, and the abtained results are; that without series capacitors the bandwidth is 2-12 GHz, but with capacitors 2-20 GHz in flat gain.