• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.168-172
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• 1999

The 9 $\mu\textrm{m}$ GaN films on sapphire substrate were grown by Hydride vapor phase epitaxy. Dislocation density of these GaN films was measured by TEM. GaN film with crack free and mirror surface was directly grown on sapphire substrate. The dislocation density of this GaN film was $2{\times}10^9/cm^2$. The surface of GaN film on patterned GaN layer also presented a smooth mirror. But a part of GaN surface included holes because of incomplete coalescence. The dislocation density of GaN film above the mask region was lower than that in the window region. Especially, the dislocation density in the region between mask center and window region was close to dislocation free. The average dislocation density of ELO GaN was $8{\times}10^7/cm^2$.

• Nuclear Engineering and Technology
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• v.53 no.7
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• pp.2304-2311
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• 2021

The dislocation density in strain-hardened Alloy 690 was analyzed using scanning transmission electron microscopy (STEM) to study the relationship between the local plastic strain and susceptibility to primary water stress corrosion cracking (PWSCC) in nuclear power plants. The test material was cold-rolled at various thickness reduction ratios from 10% to 40% to simulate the strain-hardening condition of plant components. The dislocation densities were measured at grain boundaries (GB) and in grain interiors of strain-hardened specimens from STEM images. The dislocation density in the grain interior monotonically increased as the strain-hardening proceeded, while the dislocation density at the GB increased with strain-hardening up to 20% but slightly decreases upon further deformation to 40%. The decreased dislocation density at the GB was attributed to the formation of deformation twins. After the PWSCC growth test of strain-hardened Alloy 690, the fraction of intergranular (IG) fracture was obtained from fractography. In contrast to the change in the dislocation density with strain-hardening, the fraction of IG fracture increased remarkably when strain-hardened over 20%. From the results, it was suggested that the PWSCC growth behavior of strain-hardened Alloy 690 not only depends on the dislocation density, but also on the microstructural defects at the GB.

• Applied Microscopy
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• v.44 no.2
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• pp.74-78
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• 2014

Dislocation density and distribution in epitaxial GaAs layer on Si are evaluated quantitatively and effectively using image processing of transmission electron microscopy image. In order to evaluate dislocation density and distribution, three methods are introduced based on line-intercept, line-length measurement and our coding with line-scanning method. Our coding method based on line-scanning is used to detect the dislocations line-by-line effectively by sweeping a thin line with the width of one pixel. The proposed method has advances in the evaluation of dislocation density and distribution. Dislocations can be detected automatically and continuously by a sweeping line in the code. Variation of dislocation density in epitaxial GaAs films can be precisely analyzed along the growth direction on the film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.560-566
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• 1997

Dislocation behavior in the ZnSe crystal grown by seeded vapor transport was investigated. Etch pit shape with the ZnSe plane and dislocation arrangement were shown. Also the variation of the dislocation density in the crystal was disclosed. The dislocation density along the lateral growth direction was not changed but the dislocation density along the vertical growth direction was reduced as the crystal grew. The average dislocation density of the grown crystal was $4{\times}10^4 /\textrm{cm}^2$.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.20 no.5
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• pp.618-622
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• 2011

Specialized large-scale computational finite-element and molecular dynamic models have been used in order to understand and predict how dislocation density emission and contact stress field due to nanoindentation affect inelastic deformation evolution scales that span the molecular to the continuum level in ductile crystalline systems. Dislocation density distributions and local stress fields have been obtained for different crystalline slip-system and grain-boundary orientations. The interrelated effects of grain-boundary interfaces and orientations, dislocation density evolution and crystalline structure on indentation inelastic regions have been investigated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.535-541
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• 1999

Low-dislocation-density large-diameter GaAs single crystals with low-residual-strain have been strongly required. We have developed dislocation-free 3-inch Si doped GaAs crystals for photonic devices, and low-dislocation-density low-residual-strain 4-inch to 6-inch semi-insulating GaAs crystals for electronic devices by Vertical Bridgman(VB) technique. We confirmed that VB substrates with low-residual-strain have higher resistance against slip-line generation during MBE process. VB-GaAs single crystals show uniform radial profile of resistivity reflecting to the flat solid-liquid interface during the crystal growth. Uniformity of micro-resistivity of VB-GaAs substrate is much better than of the LEC-GaAs substrate, which is due to the low-dislocation-density of VB-GaAs single crystals.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.129-157
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• 1999

Low-dislocation-density large-diameter GaAs single crystals with low-residual-strain have been strongly required. We have developed dislocation-free 3-inch Si-doped GaAs crystals for photonic devices [1], and low-dislocation-density low-residual-strain 4-inch to 6-inch [2, 3] semi-insulating GaAs crystals for electronic devices by Vertical Boat (VB) technique. We confirmed that VB substrates with low-residual-strain have higher resistance against slip-line generation during MBE process. VB-GaAs single crystals show uniform radial profile of resistivity reflecting to the flat solid-liquid interface during the crystal growth. Uniformity of micro-resistivity of VB-GaAs substrate is much better than that of the LEC-GaAs substrate, which is due to the low-dislocation-density of VB-GaAs single crystals.

• Nuclear Engineering and Technology
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• v.56 no.8
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• pp.3129-3138
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• 2024

The in-situ TEM irradiation experiments of zirconium alloy were conducted at 573 K, 673 K, and 773 K utilizing a 400 keV Kr + single beam and a 400 keV Kr+ and 30 keV He + dual beam. The results show that a large number of dislocation loops have been characterized in the matrix of the zirconium alloy under irradiation. With increasing the irradiation damage dose, some dislocation loops have reacted with one another to form a larger dislocation loop, which has finally formed dislocation lines or other defect structures. In zirconium alloys irradiated with Kr + single beam and Kr+ and He + dual-beam radiation, the proportion of <a> type dislocation loops with different Burgers vectors is essentially the same at low damage doses, but the proportion of interstitial type dislocation loops with the same Burgers vectors is obviously different. The amorphization of the second phase and the dissolution of the small-sized second phase were also pointed out. With the increase in temperature, the density of the dislocation loop in zirconium alloy gradually decreases, and the size of dislocation loop first increases and then decreases. Kr+ and He + dual beam irradiation increases the size of dislocation loops but decreases their density as compared with Kr + single beam irradiation.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.20 no.10
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• pp.3408-3414
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• 1996

This paper investigated plane strain stress intensity factors caused by thermal impact on a center-crack strip. The crack was aligned perpendicularly to the strip boundary. The problem was analysed by determining the dislocation density function in the singular integral equations formulated by the dislocation theory. Under the abrupt temperature change along the edge, the center crack behaved as a mode I crack due to the symmetric geometry. The value of maximum stress intensity factor monotonically increased until the ratio of dimensionless crack length approached to about 0.3, followed by gradual decrease. As a result, a critical corresponding crack length was determined.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.296-301
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• 2004

By the purpose to investigate the change of internal stress and mobile dislocation density in creep, the stress relaxation test is carried out in the condition of each strain. Mobile dislocation density increased until it reached minimum creep rate and after that, it decreased and internal stress didn't have the change approximately until it reached minimum creep rate and after that, it decreased. The stress relaxation rate is fast and approached zero after 1.5 seconds after the beginning of the stress relaxation. And the larger the applied stress is, the larger the internal stress is. By the evaluation of mobility of dislocation, the dislocations glide viscously in STS31OJlTB but it is the dislocations glide viscously which N passes by cutting Cr atom rather than typical viscosity movement after calculating mobility of dislocation.