• 한국결정성장학회지
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• 제9권2호
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• pp.168-172
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• 1999

HVPE 법으로 sapphire 기판 위에 두께 9$\mu\textrm{m}$의 GaN film을 성장하였다. Sapphire위에 직접 성장된 GaN film은 crack free로 mirror surface를 나타내었고 dislocation density는 $2{\times}10^9/cm^2$이었다.$SiO_2$ mask pattern을 사용하여 성장된 ELO GaN film도 대부분이 mirror surface를 나타내었으나 표면 일부에서 coalescence가 덜 이루어져 stripe 방향으로 hole이 존재하였다. ELO GaN film의 mask 윗부분은 window 부분에 비해 낮은 dislocation density를 나타냈다. 특히 mask center와 window사이 영역에서는 거의 dislocation이 없었다. ELO GaN film의 dislocation density는 평균 $8{\times}10^7/cm^2$.이었다.

• Nuclear Engineering and Technology
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• 제53권7호
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• pp.2304-2311
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• 2021

The dislocation density in strain-hardened Alloy 690 was analyzed using scanning transmission electron microscopy (STEM) to study the relationship between the local plastic strain and susceptibility to primary water stress corrosion cracking (PWSCC) in nuclear power plants. The test material was cold-rolled at various thickness reduction ratios from 10% to 40% to simulate the strain-hardening condition of plant components. The dislocation densities were measured at grain boundaries (GB) and in grain interiors of strain-hardened specimens from STEM images. The dislocation density in the grain interior monotonically increased as the strain-hardening proceeded, while the dislocation density at the GB increased with strain-hardening up to 20% but slightly decreases upon further deformation to 40%. The decreased dislocation density at the GB was attributed to the formation of deformation twins. After the PWSCC growth test of strain-hardened Alloy 690, the fraction of intergranular (IG) fracture was obtained from fractography. In contrast to the change in the dislocation density with strain-hardening, the fraction of IG fracture increased remarkably when strain-hardened over 20%. From the results, it was suggested that the PWSCC growth behavior of strain-hardened Alloy 690 not only depends on the dislocation density, but also on the microstructural defects at the GB.

• Applied Microscopy
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• 제44권2호
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• pp.74-78
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• 2014

Dislocation density and distribution in epitaxial GaAs layer on Si are evaluated quantitatively and effectively using image processing of transmission electron microscopy image. In order to evaluate dislocation density and distribution, three methods are introduced based on line-intercept, line-length measurement and our coding with line-scanning method. Our coding method based on line-scanning is used to detect the dislocations line-by-line effectively by sweeping a thin line with the width of one pixel. The proposed method has advances in the evaluation of dislocation density and distribution. Dislocations can be detected automatically and continuously by a sweeping line in the code. Variation of dislocation density in epitaxial GaAs films can be precisely analyzed along the growth direction on the film.

• 한국결정성장학회지
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• 제7권4호
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• pp.560-566
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• 1997

Seeded vapor transport법에 의해 성장된 ZnSe 결정내에서 전위거동을 살펴보았다. (111)과 (100) ZnSe wafer의 etch pit 형상을 관찰하였고 성장된 결정이 높은 전위밀도를 가지면 전위들이 lineage와 cellular 두 가지 형태로 배열됨을 알았다. Seed로부터 측방성장된 부위에서 전위밀도의 변화는 없었으나 수직 성장방향으로는 전위밀도가 감소하였고, 같은 wafer내에서 전위밀도는 wafer center 지역의 전위밀도가 edge부위의 전위밀도 보다 낮았다. 성장된 결정의 평균 전위밀도는 $4{\times}10^4 /\textrm{cm}^2$이었다.

• 한국생산제조학회지
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• 제20권5호
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• pp.618-622
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• 2011

Specialized large-scale computational finite-element and molecular dynamic models have been used in order to understand and predict how dislocation density emission and contact stress field due to nanoindentation affect inelastic deformation evolution scales that span the molecular to the continuum level in ductile crystalline systems. Dislocation density distributions and local stress fields have been obtained for different crystalline slip-system and grain-boundary orientations. The interrelated effects of grain-boundary interfaces and orientations, dislocation density evolution and crystalline structure on indentation inelastic regions have been investigated.

• 한국결정성장학회지
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• 제9권6호
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• pp.535-541
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• 1999

Low-dislocation-density large-diameter GaAs single crystals with low-residual-strain have been strongly required. We have developed dislocation-free 3-inch Si doped GaAs crystals for photonic devices, and low-dislocation-density low-residual-strain 4-inch to 6-inch semi-insulating GaAs crystals for electronic devices by Vertical Bridgman(VB) technique. We confirmed that VB substrates with low-residual-strain have higher resistance against slip-line generation during MBE process. VB-GaAs single crystals show uniform radial profile of resistivity reflecting to the flat solid-liquid interface during the crystal growth. Uniformity of micro-resistivity of VB-GaAs substrate is much better than of the LEC-GaAs substrate, which is due to the low-dislocation-density of VB-GaAs single crystals.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.129-157
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• 1999

Low-dislocation-density large-diameter GaAs single crystals with low-residual-strain have been strongly required. We have developed dislocation-free 3-inch Si-doped GaAs crystals for photonic devices [1], and low-dislocation-density low-residual-strain 4-inch to 6-inch [2, 3] semi-insulating GaAs crystals for electronic devices by Vertical Boat (VB) technique. We confirmed that VB substrates with low-residual-strain have higher resistance against slip-line generation during MBE process. VB-GaAs single crystals show uniform radial profile of resistivity reflecting to the flat solid-liquid interface during the crystal growth. Uniformity of micro-resistivity of VB-GaAs substrate is much better than that of the LEC-GaAs substrate, which is due to the low-dislocation-density of VB-GaAs single crystals.

• 대한기계학회논문집A
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• 제20권10호
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• pp.3408-3414
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• 1996

This paper investigated plane strain stress intensity factors caused by thermal impact on a center-crack strip. The crack was aligned perpendicularly to the strip boundary. The problem was analysed by determining the dislocation density function in the singular integral equations formulated by the dislocation theory. Under the abrupt temperature change along the edge, the center crack behaved as a mode I crack due to the symmetric geometry. The value of maximum stress intensity factor monotonically increased until the ratio of dimensionless crack length approached to about 0.3, followed by gradual decrease. As a result, a critical corresponding crack length was determined.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 춘계학술대회
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• pp.296-301
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• 2004

By the purpose to investigate the change of internal stress and mobile dislocation density in creep, the stress relaxation test is carried out in the condition of each strain. Mobile dislocation density increased until it reached minimum creep rate and after that, it decreased and internal stress didn't have the change approximately until it reached minimum creep rate and after that, it decreased. The stress relaxation rate is fast and approached zero after 1.5 seconds after the beginning of the stress relaxation. And the larger the applied stress is, the larger the internal stress is. By the evaluation of mobility of dislocation, the dislocations glide viscously in STS31OJlTB but it is the dislocations glide viscously which N passes by cutting Cr atom rather than typical viscosity movement after calculating mobility of dislocation.

• 소성∙가공
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• 제13권2호
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• pp.160-167
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• 2004

In order to theoretically analyze the creep behavior of high Cr steel at $600^{\circ}C$, a unified elasto-viscoplastic constitutive model based on the consideration of dislocation density is proposed. A combination of a kinetic equation describing the mechanical response of a material at a given microstructure in terms of dislocation glide and evolution equations for internal variables characterizing the microstructure provides the constitutive equations of the model. Microstructural features of the material such as the grain size and spacing between second phase particles are directly implemented in the constitutive equations. The internal variables are associated with the total dislocation density in a simple model. The model has a modular structure and can be adjusted to describe a creep behavior using the material parameters obtained from uniaxial tensile tests.