• 한국전기전자재료학회논문지
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• 제17권7호
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• pp.738-746
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• 2004

Recently zinc oxide(ZnO) has emerged as one of the most promising transparent conducting films with a strong demand of low cost and high performance optoelectronic devices, ZnO film has many advantages such as high chemical and mechanical stabilities, and abundance in nature. In this paper, in order to obtain the excellent transparent conducting film with low resistivity and high optical transmittance for Plasma Display Pannel(PDP), aluminium doped zinc oxide films were deposited on Corning glass substrate by dc magnetron sputtering method. The effects of the discharge power and doping amounts of $Al_2$$O_3$ on the electrical and optical properties were investigated experimentally. Particularly in order to lower the electrical resistivity, positive and negative bias voltages were applied on the substrate, and the effect of bias voltage on the electrical properties of ZnO:Al thin film were also studied and discussed. Films with lowest resistivity of $4.3 \times 10 ^{-4} \Omega-cm$ and good transmittance of 91.46 % have been achieved for the films deposited at 1 mtorr, $400^{\circ}C$, 40 W, Al content of 2 wt% with a substrate bias of +30 V for about 800 nm in film thickness.

• 한국전기전자재료학회논문지
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• 제20권7호
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• pp.620-625
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• 2007

The effects of $Gd_2O_3$ addition and sintering condition on optical and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. Doped MgO films prepared by the e-beam evaporation have a higher ${\Upsilon}$ (secondary electron emission coefficient) than pure MgO protective layer. Relative density and grain size increased with amount of $Gd_2O_3$ up to 100 ppm and then decreased further addition. These results showed that discharge properties and optical properties of MgO protective layers seemed to be closely related with microstructure factors such as relative density and grain size. Good optical and electrical properties of ${\Upsilon}$ of 0.138, surface roughness of 5.77 nm and optical transmittance of 95.76 % were obtained for the MgO+100 ppm $Gd_2O_3$ protective layer sintered at $1700^{\circ}C$ for 5 hrs.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1406-1407
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• 2007

본 논문에서 제안한 ac-PDP(Plasma display panel) 셀구조는 Long gap의 전극 사이에 보조 전극을 삽입한 구조이다. 일반적으로, long gap 구조를 가진 PDP cell은 높은 방전 개시 전압을 가지므로, Long gap 전극 사이에 보조전극을 삽입하여 방전 개시 전압을 낮춤과 동시에 휘도 상승, 소비 전력의 감소효과로 발광효율의 향상을 가져왔다. 제안한 구조의 구동을 위하여 asymmetric mode와 long gap mode라는 2가지 파형을 가지고 실험하였다. 두 파형은 공통적으로 기존의 ADS(Address and Display period Separated)파형을 Y(Scan), Z(Common), A(Address) 전극에 인가하였으며, 보조적극에는 Z(Common) 전극의 파형을 수정한 형태로 인가하였다. Asymmetric mode는 보조전극에 Z(Common) 전극에 인가되는 파형과 같은 형태의 파형을 인가하여 Long gap의 구조를 가지지만 Short gap에서 방전이 가능하도록 설계하였고, long gap mode는 보조전극에 인가되는 Z(Common) 파형 중 sustain pulse를 초기 3개만을 주어 Short gap에서 방전을 개시함과 동시에 priming 입자를 생성하고, 나머지 sustain 구간에서는 floating시켜 이미 생성된 priming 입자를 long gap에서 구동을 가능하도록 하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.408-411
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• 2003

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure, discharge power and doping amounts of Al on the electrical, optical and morphological properties were investigated experimentally. The effect of bias voltage on the electrical properties of ZnO thin film were also studied. Films with lowest resistivity of $5.4{\times}10^{-4}\;{\Omega}-cm$ have been achieved in case of films deposited at 1mtorr, $400^{\circ}C$ with a substrate bias of +10V for 840nm in film thickness.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.550-551
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• 2005

고밀도 유도결합 플라즈마 장치의 $O_2$ 방전에 대한 공간 평균 시뮬레이터를 제작하였다. 제작된 시뮬레이터는 $O_2$ 플라즈마 방전에서 발생되는 전자, 양이온, 음이온 및 중성종, 활성종들에 대해 공간 평균된 유체 방정식을 기반으로 하고 있으며, 고밀도 유도결합 플라즈마 장치에서 전자가열 모델은 anomalous skin effect 를 고려한 파워 흡수 모델을 적용하여 전자가 흡수하는 고주파 파워량을 결정하였다. 완성된 시뮬레이터에서 RF- 파워, gas-inlet, pumping-speed등의 조정 변수를 비롯한 여러 가지 장치 변수들의 변화에 대한 하전입자, 중성종, 활성종들의 밀도 변화 및 전자 온도 의존성을 계산하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.531-534
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• 2004

In Recent, it became necessary to develope the technology about electrodeless fluorescent lamp according to demand of the electodeless fluorescent lamp system that used higher efficiency and advantage of long-lifetime. Especially, in the electordeless fluorescent lamp which used H-mode, efficiency of lamp is decided from matching parameter of antena and inverter. So it is of the utmost importance to design antena and inverter Therefore, this paper used a transformer principle for efficiency rising of electrodeless fluorescent lamp and interpreted an equivalent circuit, used an impedance analyzer in order to confirm a performance enhancement of lamp along design of antenna, and confirmed parameter characteristic of R, L, C, Z, Q-factor along a change of magnetic flux density. Also, this paper confirmed a luminance characteristic of electordeless lamp along parameter change with measuring optical characteristic along a change of magnetic flux density

• 대한금속재료학회지
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• 제49권12호
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• pp.950-955
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• 2011

In the present study, the formation of hollow Cu oxide nanoparticles through the oxidation process at temperatures from 200 to $300^{\circ}C$ has been studied by transmission electron microscopy with Cu nanoparticles produced by the plasma arc discharge method. The Cu nanoparticles had a thin oxide layer on the surface at room temperature and the thickness of this oxide layer increased during oxidation in atmosphere at $200-300^{\circ}C$ However, the oxide layer consisted of $Cu_2O$ and CuO after oxidation at $200^{\circ}C$ whereas this layer was comprised of only CuO after oxidation at $300^{\circ}C$ On the other hand, hollow Cu oxide nanoparticles are obtained as a result of vacancy aggregation in the oxidation processes, resulting from the rapid outward diffusion of metal ions through the oxide layer during the oxidation process.

• 한국광학회지
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• 제3권3호
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• pp.178-182
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• 1992

내경 1.6cm, 길이 50cm의 알루미나 세라믹 방전관을 사용하여 방전전극간의 거리가 45cm인 공쟁식 방전가열형 구리증기레이저를 제작하였다. 방전가열 및 여기를 위한 6kV, 500mA 정격의 직류 고전압 전원장치, 1.8H의 중전 인덕터와 5nF의 에너지저장 캐패시터를 포함하는 resonant charging 방식의 고전압 충전회로와 1-7kHz 범위의 펄스반복률로 동작하는 thyratron 구동회로가 각각 설계 제작되었다. 개발된 레이저장치는 방전관의 온도 $1350^{\circ}C$ 부근에서 발진을 시작하였고, 충전전압 12kV, 펄스반복률 4.5kHz, 네온완충기체압력 50mbar, 동작온도 $1460^{\circ}C$일 때 0.7W의 최대평균 출력을 얻었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2001년도 추계학술발표회 초록집
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• pp.69-69
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• 2001

We report a study of the nitriding of the martensitic grade of stainless steel AKSK 420 in a low-pressure rl discharge using pure nitrogen. Much studied samples of the austenitic grade AISI 304 were treated at the same time to provide a comparison. With a treatment time of 4.0 h at $400^{\circ}C$, the nitrogen-rich layer on MSK 420 is 20pm thick and has a hardness about 4.3 times higher than that of the untreated material. The layer thickness is much greater than that obtained on AISI 304 under identical treatment conditions, reflecting the different Cr content of the two alloys. The alloy AlISI 420 is more susceptible than AISI 304 to the formation of CrN and ferrite, and this has a deleterious effect on the hardnes, gain. Below the temperature at which CrN forms, the treated layer retains its martensitic structure, but with a larger lattice parameter than the bulk, a phase that we term expanded martensite, by analogy with the situation with austenitic stainless steel. The fact that the treated layer retains a martensitic structure is interesting in view of previous evidence that nitrogen is an austenite stabilizer.

• Nuclear Engineering and Technology
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• 제55권1호
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• pp.100-108
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• 2023

In this study, a neural network model inspired by a one-dimensional convolution U-net is developed to automatically accelerate edge localized mode (ELM) detection from big diagnostic data of fusion devices and increase the detection accuracy regardless of the hyperparameter setting. This model recognizes the input signal patterns and overcomes the problems of existing detection algorithms, such as the prominence algorithm and those of differential methods with high sensitivity for the threshold and signal intensity. To train the model, 10 sets of discharge radiation data from the KSTAR are used and sliced into 11091 inputs of length 12 ms, of which 20% are used for validation. According to the receiver operating characteristic curves, our model shows a positive prediction rate and a true prediction rate of approximately 90% each, which is comparable to the best detection performance afforded by other algorithms using their optimized hyperparameters. The accurate and automatic ELM-burst detection methodology used in our model can be beneficial for determining plasma properties, such as the ELM frequency from big data measured in multiple experiments using machines from the KSTAR device and ITER. Additionally, it is applicable to feature detection in the time-series data of other engineering fields.