• 전자공학회논문지A
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• 제29A권10호
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• pp.42-48
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• 1992

RoA is an important figure of merits for estimating the performance of p-n junction infrared detectors. This paper presents the tunneling current contribution to RoA of $Hg_{1-x}Cd_{x}$Te n$^{+}$-p juction photodiodes. Then, a diffusion model, a thermal generation-recombination model, an indirect tunneling model via trap, and a band-to-band direct tunneling model are considered to calculate RoA. Using these models, RoA depending on temperature, doping concentration, and mole fraction is calculated. Also from these results, under various operating conditions the dominant dark current mechanisms cna be understood.

• 한국전기전자재료학회논문지
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• 제21권7호
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• pp.615-619
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• 2008

A molecular memory device which has a structure of Al/$Al_2O_3$/ASA-15 LB monolayer/Ti/Al device, was fabricated. To study a charge transfer mechanism of molecular memory devices, current density-voltage (J-V) characteristics were measured at an increasing temperature range from 10 K to 300 K with an interval of 30 K. Strong temperature-dependent electrical property and tunneling through organic monolayer at low bias (below 0.5 V) were appeared. These experimental data were fitted by using a theoretical formula such as the Simmons model. In comparison between the theoretical and the experimental results, it was verified that the fitting results using the Simmons model about direct tunneling was fairly fitted below 0.5 V at both 300 K and 10 K. Hopping conduction was also dominant at all voltage range above 200 K due to charges trapped by defects located within the dielectric stack, including the $Al_2O_3$, organic monolayer and Ti interfaces.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.112-112
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• 2011

The interaction of water molecules with solid surfaces has been a subject of considerable interests, due to its importance in the fields from atmospheric and environmental phenomena to biology, catalysis and electrochemistry [1,2]. Among various kinds of surfaces, a lot of theoretical and experimental studies have been performed regarding water on MgO(100), however, to date, there has been no direct observation of water molecules on MgO by scanning tunneling microscope (STM) as compared with those on metal surface. Here, we will present the direct observation and manipulation of single water molecules on ultrathin MgO(100) films using low-temperature scanning tunneling microscope (LT-STM) [3]. Our results rationalize the previous theoretical predictions of isolated water molecules on MgO including the optimum adsorption sites and non-dissociative adsorption of water. Moreover, we were able to dissociate a water molecule by exciting the vibrational mode of water, which is unattainable on metal surfaces. The enhanced residual time of tunneling electrons in molecules on the insulating film is responsible for this unique pathway toward dissociation of water.

• BMB Reports
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• 제52권8호
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• pp.490-495
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• 2019

Using tunneling nanotubes (TNTs), various pathological molecules and viruses disseminate to adjacent cells intercellularly. Here, we show that the intracellular invasion of Mycoplasma hyorhinis induces the formation of actin- and tubulin-based TNTs in various mammalian cell lines. M. hyorhinis was found in TNTs generated by M. hyorhinis infection in NIH3T3 cells. Because mycoplasma-free recipient cells received mycoplasmas from M. hyorhinis-infected donor cells in a mixed co-culture system and not a spatially separated co-culture system, direct cell-to-cell contact via TNTs was necessary for the intracellular dissemination of M. hyorhinis. The activity of Rac1, which is a small GTP binding protein, was increased by the intracellular invasion of M. hyorhinis, and its pharmacological and genetic inhibition prevented M. hyorhinis infection-induced TNT generation in NIH3T3 cells. The pharmacological and genetic inhibition of Rac1 also reduced the cell-to-cell dissemination of M. hyorhinis. Based on these data, we conclude that intracellular invasion of M. hyorhinis induces the formation of TNTs, which are used for the cell-to-cell dissemination of M. hyorhinis.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권3호
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• pp.157-163
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• 2002

A new flash EEPROM device with p^＋ poly-Si control gate and n^＋ poly-Si floating side gate was fabricated and characterized. The n^＋ poly-Si gate is formed on both sides of the p^＋ poly-Si gate, and controls the underneath channel conductivity depending on the number of electron in it. The cell was programmed by hot-carrier-injection at the drain extension, and erased by direct tunneling. The proposed EEPROM cell can be scaled down to 50 nm or less. Shown were measured programming and erasing characteristics. The channel resistance with the write operation was increased by at least 3 times.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.125.1-125.1
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• 2016

The excitonic insulator (EI), which is one of fundamental insulators, was theoretically proposed in 1967 but its material realization has not been established well. Only a few materials were proposed as EIs but their experimental evidences were indirect such as the renormalization of band dispersions or an anomaly in electrical resistivity. We conducted scanning tunneling microscopy / spectroscopy measurements and found out that $Ta_2$ $NiSe_5$, which was the most recently proposed as an EI, had a metal-insulator phase transition with the energy gap of 700 meV at 78 K. Moreover, the spatially delocalized excitonic energy level was observed within the energy gap, which could be the direct evidence of the EI ground state. Our theoretical model calculation with the order parameter of 150 meV reproduces the spectral function and the excitonic energy gap very well. In addition, experimental data shows that the band character is inverted at the valence and conduction band edges by the exciton formation, indicating that the mechanism of exciton condensation is similar to the Bardeen-Cooper-Schrieffer (BCS) mechanism of cooper pairs in superconductors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.408-409
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• 2009

The memory characteristics of charge trap memory capacitor with high-k materials were investigated. I-V characteristics of the fabricated device with band gap engineered tunneling gate stacks consisted of $SiO_2$, $ZrO_2$, $Al_2O_3$ dielectrics were evaluated and compared with the one consisted of $SiO_2$ tunneling dielectric. The memory capacitor including engineered tunneling dielectrics of ($Al_2O_3/ZrO_2/SiO_2$) shows the fastest PIE speed and long data retention time.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.89-89
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• 2012

Arrangement of individual atoms and molecules with atomic precision and understanding the resulting properties at the molecular level are ultimate goals of chemistry, biology, and materials science. For the past three decades, scanning probe microscopy has made strides towards these goals through the direct observation of individual atoms and molecules, enabling the discovery of new and unexpected phenomena. This talk will discuss the origin of forces governing motion of small organic molecules and their extended self-assembly into two-dimensional surface structures by direct observation of individual molecules using scanning tunneling microscopy (STM).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.273-273
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• 2011

현재 사용되고 있는 플로팅 게이트를 이용한 플래시 메모리 소자는 비례축소에 의해 발생하는 단 채널 효과, 펀치스루 효과 및 소자간 커플링 현상과 같은 문제로 소자의 크기를 줄이는데 한계가 있다. 이러한 문제를 해결하기 위하여 silicon nitride와 같은 절연체를 전자의 트랩층으로 사용하는 charge trap flash (CTF) 메모리 소자에 대한 연구가 활발히 진행되고 있다. CTF 메모리 소자의 전기적 특성에 대한 연구는 활발히 진행 되었지만, 수치 해석 모델을 사용하여 메모리 소자의 전하수송 메커니즘을 분석한 연구는 매우 적다. 본 연구에서는 수치 해석 모델을 적용하여 개발한 시뮬레이터를 사용하여 CTF 메모리 소자의 프로그램 동작 시 전하수송 메커니즘에 대한 연구를 하였다. 시뮬레이터에 사용된 모델은 연속방정식, 포아송 방정식과 Shockley-Read-Hall 재결합 모델을 수치해석적 방법으로 계산하였다. 또한 CTF 소자 프로그램 동작 시 트랩 층으로 주입되는 전자의 양은 Wentzel-Kramers-Brillouin 근사 법을 이용하여 계산하였다. 트랩 층에 트랩 되었던 전자의 방출 모델은 이온화 과정을 사용하였다. 게이트와 트랩 층 사이의 터널링은 Fowler-Nordheim (FN) tunneling 모델, Direct tunneling 모델, Modified FN tunneling 모델을 적용하였다. FN tunneling 만을 적용했을때 보다 세가지 모델을 적용했을 때가 더 실험치와의 오차가 적었다. 그 이유는 시뮬레이션 결과를 통해 인가된 전계에 의해 Bottom Oxide 층의 에너지 밴드 구조가 변화하여 세가지 tunneling 모델의 구역이 발생하는 것을 확인 할 수 있었다. 계산된 결과의 전류-전압 곡선을 통해 CTF 메모리 소자의 프로그램 동작 특성을 관찰하였다. 트랩 층의 전도대역과 트랩 층 내부에 분포하는 전자의 양을 시간에 따라 계산하여 트랩 밀도가 시간이 지남에 따라 일정 값에 수렴하고 많은 전하가 트랩 될 수록 전하 주입이 줄어듬을 관찰 하였다. 이와 같은 시뮬레이션 결과를 통해 CTF 메모리의 트랩층에서 전하의 이동에 대해 더 많이 이해하여 CTF 소자가 가진 문제점 해결에 도움을 줄 것이다.

• Geomechanics and Engineering
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• 제35권6호
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• pp.647-663
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• 2023

The investigation of the disc cutter wear prediction has an important guiding role in TBM equipment selection, project planning, and cost forecasting, especially when tunneling in a long-distance rock formations with high strength and high abrasivity. In this study, a comprehensive database of disc cutter wear data, geological properties, and tunneling parameters is obtained from a 1326 m excavated metro tunnel project in leptynite in Shenzhen, China. The failure forms and wear consumption of disc cutters on site are analyzed with emphasis. The results showed that 81% of disc cutters fail due to uniform wear, and other cutters are replaced owing to abnormal wear, especially flat wear of the cutter rings. In addition, it is found that there is a reasonable direct proportional relationship between the uniform wear rate (WR) and the installation radius (R), and the coefficient depends on geological characteristics and tunneling parameters. Thus, a preliminary prediction formula of the uniform wear rate, based on the installation radius of the cutterhead, was established. The correlation between some important geological properties (K_V and UCS) along with some tunneling parameters (F_n and p) and wear rate was discussed using regression analysis methods, and several prediction models for uniform wear rate were developed. Compared with a single variable, the multivariable model shows better prediction ability, and 89% of WR can be accurately estimated. The prediction model has reliability and provides a practical tool for wear prediction of disc cutter under similar hard rock projects with similar geological conditions.