• 전기의세계
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• v.25 no.2
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• pp.87-91
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• 1976

Experimentally to investigate the conductive characteristic of oil-immersed paper, we observed the leakage current-voltage characteristic of oil-immersed paper, the temperature dependence of ionization rate and the effect of metal electrode on the leakage current. The results showed that the leakage current-voltage characteristic generally followed the experimental equation i=i$_{0}$ exp (K.root.E) and the slope K did not change by the temperature and electric strength, but only when the direct voltage was applied. And also the leakage current seemed to depend on the work function of metal electrode. From the above results we concluded that the deterioration of oil-immersed paper was not only caused by the thermionic emission from the cathode but also by the conductive property of oil-immersed paper in itself and the work function of metal electrode.e.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.164-169
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• 2008

The effects of the antisite related defects on the electronic structure of silica and the gate leakage current have been investigated using first-principles calculations. Energy levels related to the antisite defects in silicon dioxide have been introduced into the bandgap, which are nearly 2.0 eV from the top of the valence band. Combining with the electronic structures calculated from first-principles simulations, tunneling currents through the silica layer with antisite defects have been calculated. The tunneling current calculations show that the hole tunneling currents assisted by the antisite defects will be dominant at low oxide field whereas the electron direct tunneling current will be dominant at high oxide field. With increased thickness of the defect layer, the threshold point where the hole tunneling current assisted by antisite defects in silica is equal to the electron direct tunneling current extends to higher oxide field.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.3
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• pp.139-144
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• 2003

We report the results of extensive mixed mode simulations and theoretical analysis to quantify the contribution of the edge direct tunneling (EDT) current on the total gate leakage current of 80nm NMOSFET with SiO2 gate dielectric. It is shown that EDT has a profound impact on basic analog circuit building blocks such as sample-hold (S/H) circuit and the current mirror circuit. A transistor design methodology with zero gate-source/drain overlap is proposed to mitigate the EDT effect. This results in lower voltage droop in S/H application and better current matching in current mirror application. It is demonstrated that decreasing the overlap length also improves the basic analog circuit performance metrics of the transistor. The transistor with zero gate-source/drain overlap, results in better transconductance, input resistance, output resistance, intrinsic gain and unity gain transition frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.262-265
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• 2001

In order to investigate the water tree degradation behavior on XLPE cable, direct voltage of 200 to 800V has been applied to the material at $50^{\circ}C\sim100^{\circ}C$. and the water tree property has been correlated with voltage and temperature in this study. The leakage current was shown to increase as temperature increased and the Ohm's law was generally satisfied in this experiment though some experimental errors were found. The leakage current was shown to decrease and reach to the stable state with time. It was also shown that the time for the stabilization of leakage current was lessened as voltage increased

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.262-265
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• 2001

In order to investigate the water tree degradation behavior on XLPE cable, direct voltage of 200 to 800V has been applied to the material at 50$^{\circ}C$∼100$^{\circ}C$, and the water tree property has been correlated with voltage and temperature in this study. The leakage current was shown to increase as temperature increased and the Ohm's law was generally satisfied in this experiment though some experimental errors were found. The leakage current was shown to decrease and reach to the stable state with time. It was also shown that the time for the stabilization of leakage current was lessened as voltage increased

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.71-72
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• 1998

반도체 집적 공정의 발달로 차세대 소자용으로 30 A 이하의 극 박막 Si02 절연막이 요구되고 있으며, 현재 제품으로 50-70 A 두께의 절연막을 사용한 것이 발표되고 있다. 절연막의 두께가 앓아질수록 많은 문제가 발생할 수 있는데 그 예로 절연막의 breakdo때둥에 의한 신뢰성 특성의 악화, 절연막올 통한 direct tunneling leakage current, boron풍의 dopant 침투로 인한 소자 특성 ( (Threshold Voltage)의 불안, 전기적 stress하에서의 leakage current증가와 c charge-trap 및 피terface s쩌.te의 생성으로 인한 소자 특성의 변화 둥으로 요약 된다. 절연막의 특성올 개선하기 위해 여러 가지 새로운 공정들이 제안되었다. 그 예로, Nitrogen올 Si/Si02 계면에 doping하여 절연막의 특성을 개선하는 방법 으로 고온 열처 리 를 NH3, N20, NO 분위 기 에서 실시 하거 나, polysilicon 또는 s silicon 기판에 nitrogen올 이온 주입하여 열처리 하는 방법, 그리고 Plasma분 위기에서 Nitrogen 함유 Gas를 이용하여 nitrogen을 doping시키는 방법 둥이 연구되고 있다. 또한 Oxide cleaning 후 상온에서 성장되는 oxide를 최소화 하여 절연막의 특성올 개선하기 위하여 LOAD-LOCK을 이용하는 방법, C뼈피ng 공정의 개선올 통한 contamination 감소와 silicon surface roughness 감소 로 oxide 신뢰성올 개선하는 방법 둥이 있다. 구조적 인 측면 에 서 는 Polysilicon 의 g없n size 를 최 적 화하여 OxideIPolysilicon 의 계면 특성올 개선하는 연구와 Isolation및 Gate ETCH공정이 절연막의 특성에 미 치 는 영 향도 많이 연구되 고 있다 .. Plasma damage 가 Oxide 에 미 치 는 효과 를 제어하는 방법과 Deuterium열처리 퉁올 이용하여 Hot electron Stress하에서 의 MOS 소자의 Si/Si02 계면의 신뢰성을 개선하고 있다. 또한 극 박막 전연막의 신뢰성 특성올 통계적 분석올 통하여 사용 가능한 수명 올 예 측 하는 방법 과 Direct Tunneling Leakage current 를 고려 한 허 용 가농 한 동작 전 압 예측 및 Stress Induced Leakage Current 둥에 관해서 도 최 근 활발 한 연구가 진행되고 있다.

• Journal of Korea Society of Industrial Information Systems
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• v.16 no.5
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• pp.1-8
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• 2011

This paper proposes a new input pattern generator for minimal leakage power in the nanometer CMOS technology considering all the leakage current components (sub-threshold leakage, gate tunneling leakage, band-to-band tunneling leakage). Using the accurate macro-model, a heuristic algorithm is developed to generate a input pattern for the minimum leakage. The algorithm applies to ISCAS85 benchmark circuits, and the results are compared with the results of Hspice. The simulation result shows that our method's accuracy is within a 5% difference of the Hspice simulation results. In addition, the simulation time of our method is far faster than that of the Hspice simulation.

• Geophysics and Geophysical Exploration
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• v.18 no.3
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• pp.115-124
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• 2015

A modified electrical resistivity survey has been suggested and applied to a leakage detection problem of concrete barrage. We suggest the modified electrical resistivity methods using electrodes floating on the water and apply line current sources instead of conventional point current sources in order to facilitate simple analysis. In addition, the study introduced the following three variations of modified electrode array: Direct potential array, Parallel potential array and Cross potential array. These arrays were tested and investigated through numerical experiment, physical model experiment and geophysical field exploration in order to verify their applicability to the water leakage detection of a concrete barrage. When water leakage occurred, all kind of array operations demonstrated distinct changes of aspects of potential difference in graphs obtained by not only the numerical and physical model experiments but also geophysical field exploration. Therefore, this modified electrode arrays of electrical resistivity survey, which has been adapted to the concrete barrage, has been found to be a useful method to detect water leakage.

• Journal of Information Display
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• v.8 no.3
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• pp.5-10
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• 2007

Twin target sputtering (TTS) system with a configuration of vertically parallel facing Al targets and a substrate holder perpendicular to the Al target plane has been designed to realize a direct Al cathode sputtering on organic light emitting diodes (OLEDs). The TTS system has a linear twin target gun with ladder type magnet array for effective and uniform confinement of high density plasma. It is shown that OLEDs with Al cathode deposited by the TTS show a relatvely lower leakage current density $({\sim}1{\times}10^{-5}mA/cm^2)$ at reverse bias of -6V, compared to that ($1{\times}10^{-2}{\sim}10^{-3}$ $mA/cm^2$ at -6V) of OLEDs with Al cathodes grown by conventional DC magnetron sputtering. In addition, it was found that Al cathode films prepared by TTS were amorphous structure with nanocrystallines due to low substrate temperature. This demonstrates that there is no plasma damage caused by the bombardment of energetic particles. This indicates that the TTS system with ladder type magnet array could be useful plasma damage free deposition technique for direct Al cathode sputtering on OLEDs or flexible OLEDs.

• Journal of the Korean Society for Nondestructive Testing
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• v.16 no.3
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• pp.162-173
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• 1996

Dry magnetic particle inspection(MPI) was performed to detect the surface defects of steel ingot cast billets. Magnetic properties of several materials were characterized by the measurement of the B-H hysteresis curve. The inspection results were evaluated in terms of the magnetizing current, temperature, and the amount of magnetic particles applied to billets. Magnetic flux leakage near the defect site of interest was measured and compared with the results of calculation by the finite element method in the case of direct magnetizing current. Direct and alternating magnetizing currents for materials were deduced by the comparison of the inspections. Results of the magnetic particle inspection by direct magnetizing current were compared with those of finite element method calculations, which were verified by measuring magnetic leakage flux above the surface and the surface defects of the material. For square rods, due to the geometrical effect, the magnetic flux density at the edges along the length of the rods was about 30% of that at the center of rod face for a sufficiently large direct magnetizing current, while it was about 70% for an alternating magnetizing current. Thus, an alternating magnetizing current generates rather uniform magnetic flux density over the rods, except for the region on the face across about 10 mm from the edge. The attraction of the magnetic particle by the magnetic leakage field was nearly independent of the surface temperature of the billets up to $150^{\circ}C$. However, the temperature should have been limited below $60^{\circ}C$ for an effective fixing of gathered magnetic particles to the billet surface using methylene chloride. We also found that the amount of applied magnetic particles tremendously affected the detection capability.