• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.3
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• pp.171-176
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• 2013

In this paper, we present a MEMS (micro-electro-mechanical system) implantable blood pressure sensor which has designed and fabricated with consideration of size, design flexibility, and wireless detection. Mechanical and electrical characterizations of the sensor were obtained by mathematical analysis and computer aided simulation. The sensor is composed of two coils and a air gap capacitor formed by separation of the coils. Therefore, the sensor produces its resonant frequency which is changed by external pressure variation. This frequency movement is detected by inductive coupling between the sensor and an external antenna coil. Theoretically analyzed resonant frequency of the sensor under 760 mmHg was calculated to 269.556 MHz. Fused silica was selected as sensor material with consideration of chemical and electrical reaction of human body to the material. $2mm{\times}5mm{\times}0.5mm$ pressure sensors fitted to radial artery were fabricated on the substrates by consecutive microfabrication processes: sputtering, etching, photolithography, direct bonding and laser welding. Resonant frequencies of the fabricated sensors were in the range of 269~284 MHz under 760 mmHg pressure.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.286-287
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• 2007

본 논문에서는 최근 유체소자 재료로써 많이 사용되고 있는 polymethyl methacrylate (PMMA)의 레이저 직접식각에 관한 특성을 나타내었다. 식각을 위한 레이저 원으로 기본파가 1064 nm, 반복율이 10 Hz인 Nd:YAG 레이저의 4고조파 성분 ($\lambda$=266 nm)을 사용하였다. X-Y-Z 축으로 이동 가능한 스테이지의 수평 이동속도를 변화시키며, 표면으로 조사되는 펄스 수를 제어하였다. 식각 후 광학현미경으로 식각 단면을 조사하여 식각 깊이와 폭을 측정하였다. 측정된 식각 깊이로부터 식각률을 계산하고, 그 값과 레이저 빔 밀도와의 관계를 알아보았다. 그 결과 시료 표면에 조사되는 레이저 빔 밀도의 로그값과 선형적인 관계를 갖는 것을 확인할 수 있었다. 또한 주사전자현미경을 이용하여 채널 형상 및 채널 내벽을 관찰하였다. 마이크로 채널 내벽에 식각 과정에서 발생한 생성물의 제거를 위해, 레이저 식각과 함께 질소가스 블로잉을 해주었다. 질소 블로잉 압력 1500 torr에서 식각 잔유물이 제거된 내벽을 볼 수 있었다. 실험결과, Nd:YAG 4고조파를 이용하여 PMMA 기판상에 유체 이동을 위한 마이크로 채널을 형성시킬 수 있었다.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.31-36
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• 2015

The demand for multi-functionality, high density, high performance, and miniaturization of IC devices has caused the technology paradigm shift for electronic packaging. So, thermal management of new packaged chips becomes a bottleneck for the performance of next generation devices. Among various thermal solutions such as heat sink, heat spreader, TIM, thermoelectric cooler, etc. on-chip liquid cooling module was investigated in this study. Micro-channel was fabricated on Si wafer using a deep reactive ion etching, and 3 different micro-channel designs (straight MC, serpentine MC, zigzag MC) were formed to evalute the effectiveness of liquid cooling. At the heating temperature of $200^{\circ}C$ and coolant flow rate of 150ml/min, straight MC showed the high temperature differential of ${\sim}44^{\circ}C$ after liquid cooling. The shape of liquid flowing through micro-channel was observed by fluorescence microscope, and the temperarue differential of liquid cooling module was measuremd by IR microscope.

• Journal of the Korean Society of Industry Convergence
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• v.10 no.4
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• pp.213-219
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• 2007

Glass-to-metal contact should be prevented in the design of any structural glass component. Because glass is extremely brittle and will fracture readily if even a small point load is applied. If the assembly includes a glass component supported by metallic structure, designers should provide a pliable interface of some kind between the two parts. But there happens high demand of glass-to metal contact in semiconductor industries due to adoption of dry cleaning process as one of the good solution to reduce running cost - carry out equipments cleaning with high corrosive and etching gas such as CF4 with keeping process temperature as the same as high service temperature. Therefore the quartz glass have to be received compression by direct contact with metal as the form of weight itself and vacuum pressure and fatigue by vibrations caused by process during the process. In this paper investigation will be carried out on fracture behavior of quartz glass contacted with metal directly under local load and fatigue given by process vibration with apparatus which can give $lox{\backslash}cal$ load and vibration through PZT ceramics to give guideline to prevent unintended fracture of quartz glass.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.463-463
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• 2012

ITRS (international technology roadmap for semiconductors)에 따르면 MOS(metal-oxide-semiconductor)의 CD (critical dimension)가 45 nm node이하로 줄어들면서 poly-Si/$SiO_2$를 대체할 수 있는 poly-Si/metal gate/high-k dielectric이 대두된다고 보고하고 있다. 일반적으로 high-k dielectric를 식각시 anisotropic 한 식각 형상을 형성시키기 위해서 plasma를 이용한 RIE (reactive ion etching)를 사용하고 있지만 PIDs (plasma induced damages)의 하나인 PIED (plasma induced edge damage)의 발생이 문제가 되고 있다. PIED의 원인으로 plasma의 direct interaction을 발생시켜 gate oxide의 edge에 trap을 형성시키므로 그 결과 소자 특성 저하가 보고되고 있다. 그러므로 본 연구에서는 이에 차세대 MOS의 high-k dielectric의 식각공정에 HDP (high density plasma)의 ICP (inductively coupled plasma) source를 이용한 원자층 식각 장비를 사용하여 PIED를 줄일 수 있는 새로운 식각 공정에 대한 연구를 하였다. One-monolayer 식각을 위한 1 cycle의 원자층 식각은 총 4 steps으로 구성 되어 있다. 첫 번째 step은 Langmuir isotherm에 의하여 표면에 highly reactant atoms이나 molecules을 chemically adsorption을 시킨다. 두 번째 step은 purge 시킨다. 세 번째 step은 ion source를 이용하여 발생시킨 Ar low energetic beam으로 표면에 chemically adsorbed compounds를 desorption 시킨다. 네 번째 step은 purge 시킨다. 결과적으로 self limited 한 식각이 이루어짐을 볼 수 있었다. 실제 공정을 MOS의 high-k dielectric에 적용시켜 metal gate/high-k dielectric CMOSFETs의 NCSU (North Carolina State University) CVC model로 구한 EOT (equivalent oxide thickness)는 변화가 없으면서 mos parameter인 Ion/Ioff ratio의 증가를 볼 수 있었다. 그 원인으로 XPS (X-ray photoelectron spectroscopy)로 gate oxide의 atomic percentage의 분석 결과 식각 중 발생하는 gate oxide의 edge에 trap의 감소로 기인함을 확인할 수 있었다.

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.692-699
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• 1996

nptype Si(100)웨이퍼를 precleaning하고 HF 용액에 dip etching한 후 E-beam dvaporator에 장착하여 Co 단일막($170\AA$, $340\AA$)과 Co/Ti 이중막($200\AA$/ $(50-100)\AA$)을 성장시켰다. 시편의 RTA 과정에서는 N2분위기에서 direct annealing 방식으로 열처리 온도와 시간을 변화시켜가며 Co-silicidation 공정을 수행하였다. Co 단일막으로 형성된 Co-실리사이드의 면저항은 $500^{\circ}C\leq$T$\leq$$850^{\circ}C$범위에서 열처리 온도와 시간의 변화에 관계없이 거의 일정한 값을 나타내었다. Co/Ti 이중막의 경우 Co-실리사이드의 형성온도가 Co 단일막의 경우에 비해 높게 나타나고 낮은 비저항의 CoSi2를 얻기 위해서는 $800^{\circ}C$이상의 온도로 열처리해야 함을 알 수 있었다. XRD 분석결과, Co 단일막으로부터 얻어진 CoSi2는 (111) 및 (220) 결정상을 나타내었으나, Co/Ti 이중막에 의한 CoSi2는 (200)결정상만이 나타나서 Si(100)기판과 에피층을 이루고 있음을 알 수 있었다. 본 실험에서 CoSi2의 비저항은 약 $18\mu$$\Omega$.cm로 나타났으며, TEM 및 AES 분석으로부터 Co/Ti bilayer-실리사이드가 다량의 Si과 Ti 외에 소량의 Co가 섞여있는 표면 복합층과, Si과 Co만이 존재하는 내부 에피층으로 구성됨을 확인하였다.

• Journal of Sensor Science and Technology
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• v.11 no.1
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• pp.54-59
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• 2002

This paper describes a new process technique for batch process of SOI(Si-on-Insulator) structures with buried cavities for MEMS(Micro Electro Mechanical System) applications by SDB(Si-wafer Direct Bonding) technology and electrochemical etch-stop. A low-cost electrochemical etch-stop method is used to control accurately the thickness of SOI. The cavities were made on the upper handling wafer by Si anisotropic etching. Two wafers are bonded with an intermediate insulating oxide layer. After high-temperature annealing($1000^{\circ}C$, 60 min), the SDB SOI structure with buried cavities was thinned by electrochemical etch-stop. The surface of the fabricated SDB SOI structure have more roughness that of lapping and polishing by mechanical method. This SDB SOI structure with buried cavities will provide a powerful and versatile substrate for novel microsensors arid microactuators.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.319-325
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• 1999

Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.

• The korean journal of orthodontics
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• v.27 no.5 s.64
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• pp.839-852
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• 1997

It has been submitted that different ion solutions containing sulfate induce crystal growth and might substitute conventional acid etching for pretreatment of enamel in orthodontic bonding(${\AA}rtun$ et al., Am. J. Orthod. 85, 333, 1984). This investigation was designed to evaluate the relevance of crystal growth on the enamel surface as an alternative to conventional acid etching in direct bonding of orthodontic brackets. Annexing Li2SO4, MgSO4, K2SO4 respectively in the solution with $25\%$ polyacrylic md 0.3M sulfuric acids were employed to enhance the crystal growth. Human bicuspids were treated with various parameters as combinations of crystal growth and glass ionomer cement, crystal growth and orthodontic resin, acid etching and orthodontic resin for an investigative purpose. Crystal growth solution containing MgSO4 showed the highest shear bond strength(15.6MPa) within the groups of bonding brackets with glass ionomer cement(p<0.01). Bonding with glass ionomer cement on the surface of crystal growth demonstrated higher shear bond strength than with orthodontic resin(p<0.001). Bonding with glass ionomer cement on the surface treated with crystal growth solution containing MgSO4 or K2SO4 was not different shear bond strength statistically from bonding with orthodontic resin on the acid-etched surface. It suggests that bonding brackets with glass ionomer cement on the surface treated with crystal growth solution containing MgSO4 or K2SO4 is a potential alternative to bonding with resin on the acid etched sufrace.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.25-29
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• 2020

This study demonstrates direct-patternable amorphous TiO_x resistive switching (RS) device and the fabrication method using photochemical metal-organic deposition (PMOD). For making photosensitive stock solutions, Ti(IV) 2-ethylhexanoate was used as starting precursor. Photochemical reaction by UV exposure was observed and analyzed by Fourier transform infrared spectroscopy and the reaction was completed within 10 minutes. Uniformly formed 20 nm thick amorphous TiO_x film was confirmed by atomic force microscopy. Amorphous TiO_x RS device, formed as 6 × 6 ㎛ square on 4 ㎛ width electrode, showed forming-less RS behavior in ±4 V and on/off ratio ≈ 20 at 0.1 V. This result shows PMOD process could be applied for low temperature processed ReRAM device and/or low cost, flexible memory device.