• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.681-684
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• 2010

The $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ multilayered structure for the transparent electrodes in plasma display panel was designed by essential macleod program (EMP) and the multilayered film was deposited on a glass substrate by direct-current (DC)/radio-frequency (RF) magnetron sputtering system. During film deposition process, the Ag layer in $TiO_2$/Ag/$TiO_2$ structure became oxidized and the filter characteristic was degraded easily. In this study, ZnS layer was adopted as a diffusion blocking layer between $TiO_2$ and Ag to prevent the oxidation of Ag layer efficiently in $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ structure. Based on the AES depth profiling analysis, the Ag layer was effectively protected by the ZnS layer as compared with the $TiO_2$/Ag/$TiO_2$ multilayered films without ZnS as an antioxidant layer. The 3 times stacked $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ films have low sheet resistance of $1.22{\Omega}/{\square}$ and luminous transmittance was as high as 62% in the visible ranges.

• Current Photovoltaic Research
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• v.6 no.1
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• pp.21-26
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• 2018

Beside several advantages, the PV power generation as a clean energy source, is still below the supply level due to high power generation cost. Therefore, the interest in fabricating low-cost thin film solar cells is increasing continuously. $Cu_2O$, a low cost photovoltaic material, has a wide direct band gap of ~2.1 eV has along with the high theoretical energy conversion efficiency of about 20%. On the other hand, it has other benefits such as earth-abundance, low cost, non-toxic, high carrier mobility ($100cm^2/Vs$). In spite of these various advantages, the efficiency of $Cu_2O$ based solar cells is still significantly lower than the theoretical limit as reported in several literatures. One of the reasons behind the low efficiency of $Cu_2O$ solar cells can be the formation of CuO layer due to atmospheric surface oxidation of $Cu_2O$ absorber layer. In this work, atomic layer deposition method was used to remove the CuO layer that formed on $Cu_2O$ surface. First, $Cu_2O$ absorber layer was deposited by electrodeposition. On top of it buffer (ZnO) and TCO (AZO) layers were deposited by atomic layer deposition and rf-magnetron sputtering respectively. We fabricated the cells with a change in the deposition temperature of buffer layer ranging between $80^{\circ}C$ to $140^{\circ}C$. Finally, we compared the performance of fabricated solar cells, and studied the influence of buffer layer deposition temperature on $Cu_2O$ based solar cells by J-V and XPS measurements.

• Journal of the Korean Society for Heat Treatment
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• v.27 no.5
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• pp.230-234
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• 2014

IGZO/Ag bi-layered films were deposited on glass substrate at room temperature with radio frequency and direct current magnetron sputtering, respectively to consider the effect of Ag buffer layer on the electrical, optical and structural properties. For all deposition, while the thickness of Ag buffer layer was varied as 10, 15, and 20 nm, The thickness of IGZO films were kept at 100 nm, In a comparison of figure of merit, IGZO films with 15 nm thick Ag buffer layer show the higher figure of merit ($1.1{\times}10^{-2}{\Omega}^{-1}$) than that of the IGZO single layer films ($3.7{\times}10^{-4}{\Omega}^{-1}$). From the observed results, it is supposed that the IGZO 100 nm/Ag 15 nm bi-layered films may be an alternative candidate for transparent electrode in a transparent thin film transistor device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.221-225
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• 2018

In this work, in order to effectively improve the electrical conductivity and visible light transmittance of ZnO thin films, ZnO single layer and ZnO/Ag bi-layer films were deposited on glass substrates by radio frequency and direct current magnetron sputtering, and then, the effects of an Ag buffer layer and electron beam irradiation on the electrical and optical properties of the films were investigated. The observed results indicate that ZnO 100 nm / Ag 7 nm films show higher opto-electrical performance than the ZnO single layer film. In addition, electron beam irradiation also effectively enhanced the visible transmittance and electrical conductivity of the ZnO/Ag bi-layer films.

• Korean Journal of Metals and Materials
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• v.47 no.1
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• pp.44-49
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• 2009

Indium tin oxide(ITO) thin films were deposited on the glass substrates by radio-frequency (RF) magnetron sputtering method. The influence of rapid thermal annealing (RTA) treatment on the optical and electrical properties of the films were investigated for the purpose of fabricating plasma display signboard. Structural properties, surface roughness, sheet resistance and transmittance of the ITO film were analysed by using x-ray diffraction method, atomic force microscopy (AFM), four point prove, and ultraviolet-visible spectrometer, respectively. It was found that the RTA treatment increased the transmittance and decreased the resistivity of the ITO film, respectively. Furthermore, we successfully demonstrated the direct-current plasma signboard by using ITO electrode and phosphors.

• Journal of the Korean institute of surface engineering
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• v.55 no.2
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• pp.91-95
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• 2022

ZnO single layer (60 nm thick) and ZnO with Ag interlayer (ZnO/Ag/ZnO; ZAZ) films were deposited on the glass substrates by using radio frequency (RF) and direct current (DC) magnetron sputter to evaluate the effectiveness of Ag interlayer on the optical visible transmittance and the conductivity of the films. In the ZAZ films, the thickness of ZnO layers was kept at 30 nm, while the Ag thickness was varied as 5, 10, 15 and 20 nm. In X-ray diffraction (XRD) analysis, ZnO films show the (002) diffraction peak and ZAZ films also show the weak ZnO (002) peak and Ag (111) diffraction peak. As a thickness of Ag interlayer increased to 20 nm, the grain size of the Ag films enlarged to 11.42 nm and the optical band gap also increased from 4.15 to 4.22 eV with carrier concentration increasing from 4.9 to 10.5×10²¹ cm^-3. In figure of merit measurements, the ZAZ films with a 10 nm thick Ag interlayer showed the higher figure of merit of 4.0×10^-3 Ω^-1 than the ZnO single layer and another ZAZ films. From the experimental result, it is assumed that the Ag interlayer enhanced effectively the opto-electrical performance of the ZAZ films.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.195-195
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• 2016

Titanium and its alloys are widely used as implants in orthopedics, dentistry and cardiology due to their outstanding properties, such as high strength, high level of hemocompatibility and enhanced biocompatibility. Hence, recent works showed that the synthesis of new Ti-based alloys for implant application involves more biocompatible metallic alloying element, such as, Nb, Hf, Zr and Mo. In particular, Nb and Hf are one of the most effective Ti ${\beta}-stabilizer$ and reducing the elastic modulus. Plasma electrolyte oxidation (PEO) is known as excellent method in the biocompatibility of biomaterial due to quickly coating time and controlled coating condition. The anodized oxide layer and diameter modulation of Ti alloys can be obtained function of improvement of cell adhesion. Silicon (Si) and magnesium (Mg) has a beneficial effect on bone. Si in particular has been found to be essential for normal bone and cartilage growth and development. In vitro studies have shown that Mg plays very important roles in essential for normal growth and metabolism of skeletal tissue in vertebrates and can be detected as minor constituents in teeth and bone. The aim of this study is to research Si and Mg doped hydroxyapatite film formation by plasma electrolytic oxidation. Ti-29Nb-xHf (x= 0, 3, 7 and 15wt%, mass fraction) alloys were prepared Ti-29Nb-xHf alloys of containing Hf up from 0 wt% to 15 wt% were melted by using a vacuum furnace. Ti-29Nb-xHf alloys were homogenized for 2 hr at $1050^{\circ}C$. Each alloy was anodized in solution containing typically 0.15 M calcium acetate monohydrate + 0.02 M calcium glycerophosphate at room temperature. A direct current power source was used for the process of anodization. Anodized alloys was prepared using 270V~300V anodization voltage at room. A Si and Mg coating was produced by RF-magnetron sputtering system. RF power of 100W was applied to the target for 1h at room temperature. The microstructure, phase and composition of Si and Mg coated oxide surface of Ti-29Nb-xHf alloys were examined by FE-SEM, EDS, and XRD.

• The Journal of Advanced Prosthodontics
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• v.5 no.4
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• pp.402-408
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• 2013

PURPOSE. The aim of this study was to evaluate the surface properties and in vitro bioactivity to osteoblasts of magnesium and magnesium-hydroxyapatite coated titanium. MATERIALS AND METHODS. Themagnesium (Mg) and magnesium-hydroxyapatite (Mg-HA) coatings on titanium (Ti) substrates were prepared by radio frequency (RF) and direct current (DC) magnetron sputtering.The samples were divided into non-coated smooth Ti (Ti-S group), Mg coatinggroup (Ti-Mg group), and Mg-HA coating group (Ti-MgHA group).The surface properties were evaluated using scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The surface roughness was evaluated by atomic force microscopy (AFM). Cell adhesion, cell proliferation and alkaline phosphatase (ALP) activity were evaluated using MC3T3-E1 cells. Reverse transcription polymerase chain reaction (RT-PCR) analysis was performed. RESULTS. Cross-sectional SEM images showed that Mg and Mg-HA depositionson titanium substrates were performed successfully. The surface roughness appeared to be similaramong the three groups. Ti-MgHA and Ti-Mg group had improved cellular responses with regard to the proliferation, alkaline phosphatase (ALP) activity, and bone-associated markers, such as bone sialoprotein (BSP) and osteocalcin (OCN) mRNA compared to those of Ti-S group. However, the differences between Ti-Mg group and Ti-MgHA group were not significant, in spite of the tendency of higher proliferation, ALP activity and BSP expression in Ti-MgHA group. CONCLUSION. Mg and Mg-HAcoatings could stimulate the differentiation into osteoblastic MC3T3-E1 cells, potentially contributing to rapid osseointegration.

• Journal of the Korean institute of surface engineering
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• v.56 no.2
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• pp.147-151
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• 2023

Transparent ZnO (100 nm thick) and ZnO/Ti/ZnO (ZTZ) films were prepared with radio frequency (RF) and direct current (DC) magnetron sputtering on the glass substrate at room temperature. During the ZTZ film deposition, the thickness of the Ti interlayer was varied, such as 6, 9, 12, and 15 nm, while the thickness of ZnO films was kept at 50 nm to investigate the effect of the Ti interlayer on the crystallization and opto-electrical performance of the films. From the XRD pattern, it is concluded that the 9 nm thick Ti interlayer showed some characteristic peaks of Ti (200) and (220), and the grain size of the ZnO (002) enlarged from 13.32 to 15.28 nm as Ti interlayer thickness increased. In an opto-electrical performance observation, ZnO single-layer films show a figure of merit of 1.4×10^-11 Ω^-1, while ZTZ films with a 9 nm-thick Ti interlayer show a higher figure of merit of 2.0×10^-5 Ω^-1.

• Journal of the Korean Society of Radiology
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• v.4 no.1
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• pp.5-9
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• 2010

In recent, a digital x-ray detector attracted worldwide attention and there are many studies to commercialize. There are two methods in digital x-ray detector. This method is an Indirect method and Direct method. This study is to see the differences between the digital x-ray detector based on a-Se used in the existing indirect conversion method and an x-ray conversion material that has better SNR(Signal-to-noise ratio) and property than the a-Se. To solve the problem that is difficult to make a large area film using Screen-Print method, we used a Screen-Print method. In this study, we used a polyclystal $HgI_2$ as x-ray conversion material and a sample thickness is $150{\mu}m$ and an area is $3cm{\times}3cm$. ITO(Indium-Tin-Oxide) electrode was used as top electrode using a Magnetron Sputtering System and each area is $3cm{\times}3cm$, $2cm{\times}2cm$ and $1cm{\times}1cm$ and then we evaluated darkcurrent, sensitivity and SNR of the $HgI_2$ film are measured, then we evaluated the electrical properties. And we used a current integration mode when I-V test. This experiment shows that the sensitivity increases in accordance with the area of the electrode but the SNR is decreased because of the high darkcurrent. Through fabricating of various thicknesses and optimal electrodes, we will optimize SNR in the future work.