• Textile Coloration and Finishing
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• v.19 no.5
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• pp.37-40
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• 2007

The electrostatic layer-by-layer technique provides a convenient way to control the construction of ultrathin films at nano-scale ranges and can be easily obtained. It can be also applicable to fiber substrate with dye compounds. We have fabricated multilayer dye films using diazonium resin and three couplers, which are prepared by self-assembly approach. This method is based on layer-by-layer deposition using electrostatic attraction between oppositely charged ions. Beside, the diazo coupling reaction proceeded to form azo dye layer on the PET fibers the same time. The corresponding results of the multilayer films have been discussed on the level of color strength (K/S).

• Journal of Industrial and Engineering Chemistry
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• v.68
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• pp.140-145
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• 2018

Bulky carbon layer uniformly distributed with nanoscale $Fe_2O_3$ was prepared via a direct carbonation of $Fe^{3+}$-polyacrylonitrile complexes at $700^{\circ}C$ under $N_2$ flow. The iron oxide carbon composites exhibited an excellent cycling performance for lithium storage with a reversible capacity of ${\sim}810mAh\;g^{-1}$ after 250 cycles at a current rate of $100mA\;g^{-1}$. The enhancement was mainly attributed to dual functions of bulky carbon layer which facilitated the lithium-ion diffusion and accommodated the volume changes of active $Fe_2O_3$ during charge/discharge process. Our novel chemical strategy is quite effective for scalable fabrication of high capacity lithium-storage materials.

• Journal of the Semiconductor & Display Technology
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• v.9 no.3
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• pp.11-16
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• 2010

The performance of an OLED fabrication system strongly depends on the design of the evaporation cell-source. Therefore, necessity of the preceding study for cell source development of new concept is becoming increase. A development plan to substitute for experiment is applied as use simulation. In this study interpret behavior of a particle through DSMC techniques, and in this paper presenting a form to make so as to have better performance of the pointtype cell source which had a nozzle.

• Current Optics and Photonics
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• v.8 no.4
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• pp.375-381
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• 2024

In this report, we present the design, fabrication, and experiment of a static solar system for electric vehicle (EV) applications. The static concentration component is composed of compound parabolic concentrators (CPCs) couplings with multi-junction solar cells, where a flat silicon panel is added to the bottom of the CPV structure to maximize power generation. This design allows the system to collect both direct sunlight and diffused sunlight. The CPCs were fabricated with acrylic with a geometric concentration ratio of 4×. We built a prototype with a (3 × 3) cell array of CPCs with a thickness of 25 mm, which is as thin as conventional flat photovoltaic panels, and performed an outdoor experiment that showed that after six hours of operation, the system had an acceptance angle of approximately 43° and an average daily efficiency of 22.85%.

• Korean Chemical Engineering Research
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• v.49 no.6
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• pp.786-789
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• 2011

In order to estimate the possibility of applying electrolytes generally used in solid oxide fuel cells(SOFCs) to direct carbon fuel cells(DCFCs), properties of YSZ(yttria stabilized zirconia) electrolyte were evaluated. In this study, vacuum slurry coating method was adapted to coat thin layer on anode support substrate. After sintering the electrolyte at $1400^{\circ}C$ for 5hrs, microstructure was analyzed by using SEM image. Also, gas permeability and ionic conductivity were measured to find out the potential possibility of electrolyte for DCFCs. The YSZ electrolyte represented dense coating layer and low gas permeability value. The ionic conductivity of YSZ electrolyte was high over $800^{\circ}C$. After measurement of the electrolyte properties, direct carbon fuel cell was fabricated and its performance was measured at $800^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.91-96
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• 2005

The silicon-on-insulator (SOI) wafer fabrication technique has been developed by using ion-cut process, based on proton implantation and wafer bonding techniques. It has been shown by SRIM simulation that 65keV proton implantation is required for a SOI wafer (200nm SOI, 400nm BOX) fabrication. In order to investigate the optimum proton dose and primary annealing condition for wafer splitting, the surface morphologic change has been observed such as blistering and flaking. As a result, effective dose is found to be in the $6\~9\times10^{16}\;H^+/cm^2$ range, and the annealing at $550^{\circ}C$ for 30 minutes is expected to be optimum for wafer splitting. Direct wafer bonding is performed by joining two wafers together after creating hydrophilic surfaces by a modified RCA cleaning, and IR inspection is followed to ensure a void free bonding. The wafer splitting was accomplished by annealing at the predetermined optimum condition, and high temperature annealing was then performed at $1,100^{\circ}C$ for 60 minutes to stabilize the bonding interface. TEM observation revealed no detectable defect at the SOI structure, and the interface trap charge density at the upper interface of the BOX was measured to be low enough to keep 'thermal' quality.

• Journal of Microbiology and Biotechnology
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• v.14 no.6
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• pp.1239-1248
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• 2004

The methylotrophic yeast Hansenula polymorpha has been extensively studied as a model organism for methanol metabolism and peroxisome biogenesis. Recently, this yeast has also attracted attention as a promising host organism for recombinant protein production. Here, we describe the fabrication and evaluation of a DNA chip spotted with 382 open reading frames (ORFs) of H. polymorpha. Each ORF was PCR-amplified using gene-specific primer sets, of which the forward primers had 5'-aminolink. The PCR products were printed in duplicate onto the aldehyde-coated slide glasses to link only the coding strands to the surface of the slide via covalent coupling between amine and aldehyde groups. With the partial genome DNA chip, we compared efficiency of direct and indirect cDNA target labeling methods, and found that the indirect method, using fluorescent-labeled dendrimers, generated a higher hybridization signal-to-noise ratio than the direct method, using cDNA targets labeled by incorporation of fluorescence-labeled nucIeotides during reverse transcription. In addition, to assess the quality of this DNA chip, we analyzed the expression profiles of H. polymorpha cells grown on different carbon sources, such as glucose and methanol, and also those of cells treated with the superoxide­generating drug, menadione. The profiles obtained showed a high-level induction of a set of ORFs involved in methanol metabolism and oxidative stress response in the presence of methanol and menadione, respectively. The results demonstrate the sensitivity and reliability of our arrays to analyze global gene expression changes of H. polymorpha under defined environmental conditions.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.343-344
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• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.6
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• pp.411-418
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• 2019

Light-triggered thyristors (LTTs) are essential components in high-power applications, such as HVDC transmission and several pulsed-power applications. Generally, LTT fabrication includes a deep diffusion of aluminum as a p-type dopant to form a uniform p-base region, which needs careful concern for contamination and additional facilities in silicon semiconductor manufacturing factories. We fabricated 4-inch 5,000 V LTTs with boron implantation and diffusion process as a p-type dopant. The LTT contains a main cathode region, edge termination designed with a variation of lateral doping, breakover diode, integrated resistor, photosensitive area, and dV/dt protection region. The doping concentration of each region was adjusted with different doses of boron ion implantation. The fabricated LTTs showed good light triggering characteristics for a light pulse of 905 nm and a blocking voltage (V_DRM) of 6,500 V. They drove an average on-state current (I_TAVM) of 2,270 A, peak nonrepetitive surge current (I_TSM) of 61 kA, critical rate of rise of on-state current (di/dt) of 1,010 A/㎲, and limiting load integral (I²T) of 17 MA²s without damage to the device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.875-881
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• 2004

Fundamental results obtained from an atomic force microscope (AFM) chemically-induced direct nano-lithography process are presented, which is regarded as a simple method for fabrication nm-scale devices such as superconducting flux flow transistors (SFFTs) and single electron tunneling transistors (SETs). Si cantilevers with Pt coating and with 30 nm thick TiO coating were used as conducting AFM tips in this study. We observed the surfaces of superconducting strip lines modified by AFM anodization' process. First, superconducting strip lines with scan size 2 ${\mu}{\textrm}{m}$${\times}$2 ${\mu}{\textrm}{m}$ have been anodized by AFM technology. The surface roughness was increased with the number of AFM scanning, The roughness variation was higher in case of the AFM tip with a positive voltage than with a negative voltage in respect of the strip surface. Second, we have patterned nm-scale oxide lines on ${YBa}-2{Cu}_3{O}_{7-x}$ superconducting microstrip surfaces by AFM conductive cantilever with a negative bias voltage. The ${YBa}-2{Cu}_3{O}_{7-x}$ oxide lines could be patterned by anodization technique. This research showed that the critical characteristics of superconducting thin films were be controlled by AFM anodization process technique. The AFM technique was expected to be used as a promising anodization technique for fabrication of an SFFT with nano-channel.