• International Journal of Precision Engineering and Manufacturing
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• v.6 no.2
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• pp.50-54
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• 2005

We report a simple, low cost, and reliable method for assembling a multi-walled nanotube (MWNT) to the end of a metal coated scanning probe microscopy (SPM) tip. By dropping the MWNT solution and applying an electric field between an SPM tip and an electrode, MWNTs which were dispersed into a dielectric solution were directly assembled onto the apex of the SPM tip due to the attraction by the dielectrophoretic force. The effective measurement of a MWNT -attached SPM tip was demonstrated by direct comparison with AFM images of a standard sample with a bare AFM tip.

• 한국신재생에너지학회:학술대회논문집
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• 2008.10a
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• pp.37-39
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• 2008

본 연구에서는 저온 데칼 전사법을 이용하여 막 전극 접합체(Membrane Electrode Assembly, MEA)를 제조하였다. 제조된 MEA는 직접 메탄올 연료 전지(Direct Methanol Fuel Cell, DMFC)를 이용하여 성능 테스트를 하였다. 저온 데칼 전사법은 $140^{\circ}C$의 낮은 온도에서 촉매 층을 데칼 기판에서 멤브레인으로 전사시키고, 전사된 촉매 층의 표면에 형성되는 것으로 알려진 이오노머 스킨 층의 형성을 막기 위해 이오노머/촉매/카본/기판의 구조로 되어 있는 데칼 기판을 사용한다. 저온 데칼 전사법으로 제조 된 카본 층이 있는 MEA의 DMFC 성능이 카본 층이 없이 데칼 전사법으로 제조된 MEA나 전통적인 고온 데칼 전사법으로 제조된 MEA, 또는 직접 스프레이 코팅법으로 제조된 MEA의 성능보다 높게 나온 것을 알 수 있다. 저온 데칼 전사법으로 제조된 MEA의 DMFC 성능이 향상된 것은 촉매 층 위에 이오노머 스킨이 형성되지 않아 반응물의 확산이 원활하게 이루어지기 때문이다. 이를 위한 특성 분석으로 EIS, CV를 측정하였다.

• Journal of Sensor Science and Technology
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• v.14 no.3
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• pp.206-210
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• 2005

The SOI structure with buried alumina was fabricated by ALD followed by bonding and etchback process. The interface of alumina and silicon was analyzed by CV measurements and cross section was investigated by SEM analysis. The density of interface state of alumina and silicon was 2.5E11/$cm^{2}$-eV after high temperature annealing for wafer bonding. It was confirmed that the surface silicon layer was completely isolated from substrate by cross section SEM and AES depth profile. The device on this alumina SOI structure would have better thermal properties than that on conventional SOI due to higher thermal conductivity of alumina than that of silicon dioxide.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.473-473
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• 2011

In recent years, organic thin film transistors OTFTs based on conductive-conjugated molecules have received significant attention. We report a fabrication of organic single crystal nanowires that made on Si substrates by liquid bridge-mediated nanotransfer molding (LB-nTM) with polyurethane acrylate (PUA) mold. LB-nTM is based on the direct transfer of various materials from a stamp to a substrate via a liquid bridge between them. In liquid bridge-transfer process, the liquid layer serves as an adhesion layer to provide good conformal contact and form covalent bonding between the organic single crystal nanowire and the Si substrate. Pentacene is the most promising organic semiconductors. However pentacene has insolubility in organic solvents so pentacene OTFTs can be achieved with vacuum evaporation system. However 6, 13-bis (triisopropylsilylethynyl) (TIPS) pentacene has high solubility in organic solvent that reported by Anthony et al. Furthermore, the substituted rings in TIPS-pentacene interrupt the herringbone packing, which leads to cofacial ${\pi}-{\pi}$ stacking. The patterned TIPS-Pentacene single crystal nanowires have been investigated by Atomic force microscopy (AFM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and electrical properties.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.2
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• pp.258-264
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• 2011

In this paper, we designed a frequency synthesizer with a low phase noise and fast lock time and excellent spurious characteristics using the offset-PLL(Phase Locked Loop) that is used in GSM(Global System for Mobile communications). The proposed frequency synthesizer has low phase noise using three times down conversion and third offset frequency of this synthesizer is created by DDS(Direct Digital Synthesizer) to have high frequency resolution. Also, this synthesizer has fast switching speed using DAC(Digital to Analog Converter). but phase noise degraded due to DAC. we improved performance using the DAC noise filter.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.4
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• pp.218-224
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• 2004

We present a miniature Direct Methanol Fuel Cell (micro-DMFC) using platinum sputtered microcolumn electrodes with a limited amount of fuel. We use the microcolumn electrode in order to improve the power density of the micro-DMFC that consists of two electrodes and polymer electrolyte. We also design the built-in fuel chamber in the anode for the portable electronics applications. We design and fabricate both microcolumn and planar electrodes, having an identical projective area of 5mm${\times}$5mm. The diffusion current density of the microcolumn electrode is 1.73 times higher than that of the planar electrode at electrode potential of 1.1V in the half-cell test. The micro-DMFC based on the microcolumn electrodes shows the maximum power of 10.8$\pm$7.54㎼(43.23$\pm$0.16㎼/$\textrm{cm}^2$) at the projective area of 5mm${\times}$5mm, while the planar electrode micro-DMFC shows the maximum power of 0.81$\pm$0.42㎼(3.24$\pm$1.68㎼/$\textrm{cm}^2$) at the same projective area. The micro-DMFC based on the microcolumn electrodes shows 13 times higher power density that the micro-DMFC based on the planar electrodes does.

• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3279-3281
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• 1999

This paper describes a method of direct wafer bonding using surfaces activated by a radio-frequency hydrogen plasma. The hydrogen plasma cleaning of silicon in the RIE mode was investigated as a pretreatment for silicon direct bonding. The cleaned silicon surface was successfully terminated by hydrogen, The hydrogen-terminated surfaces were rendered hydrophilic, which could be wetted by Dl water rinse. Two wafers of silicon and silicon dioxide were contacted to each other at room temperature and postannealed at $300{\sim}1100^{\circ}C$ in an $N_2$ atmosphere for 2 h. From the AFM results, it was revealed that the surface became rougher with the increased plasma exposure time and power. The effect of the plasma treatment on the surface chemistry was investigated by the AES analysis. It was shown that the carbon contamination at the surface could be reduced below 5 at %. The interfacial energy measured by the crack propagation method was 122 $mJ/m^2$ and 384 $mJ/m^2$ for RCA cleaning and hydrogen plasm, respectively.

• Journal of the Korean Society of Industry Convergence
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• v.23 no.4_2
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• pp.693-699
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• 2020

355nm UV pulse laser is irradiated on the surface of polyimide (PI) by LDW (Laser Direct Writing) method to produce a high sensitivity flexible humidity sensor using a simple one-step process. The LDW method continuously investigates 2-D CAD data using a galvano scanner and an F-lens. This method is non-contact, so it minimizes physical strain on the PI. Laser-induced graphene (LIG) produced by lasers has a high surface area due to its high flexibility and numerous pores and oxidizers compared to conductors. For this reason, it is highly useful as a flexible humidity sensor. The humidity sensor produced in this study was attached to the inside of a mask filter, which has become a hot topic recently, and its applicability was confirmed.The measurement of humidity measured the sensitivity, reactivity, stability and recovery behavior of the sensor by measuring changes in capacitance and resistance.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.3
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• pp.286-291
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• 2013

In this paper, a compact rectenna system is designed using a circular sector antenna with harmonic-rejecting characteristics and a direct impedance matching method. The system is designed with bandpass filtering performed by the harmonic-rejection of the circular sector antenna and without impedance matching circuit for the diodes by the direct impedance matching technique. Therefore, while the rectifying circuit of the proposed system can be implemented without a bandpass filter and a impedance matching circuit, it is integrated on the back side of the antenna using precise fabrication techniques for coaxial feedings without degrading the system performances corresponding to the feeding points. From the experimental results, the optimized rectenna system has presented excellent performances of a conversion efficiency of more than 52 % and a conversion voltages of more than 1.5 V at 2.5 GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.265-270
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• 2017

4H-SiC has attracted attention for high-power and high-temperature metal-oxide-semiconductor field-effect transistors (MOSFETs) for industrial and automotive applications. The gate oxide in the 4H-SiC MOS system is important for switching operations. Above $1000^{\circ}C$, thermal oxidation initiates $SiO_2$ layer formation on SiC; this is one advantage of 4H-SiC compared with other wide band-gap materials. However, if post-deposition annealing is not applied, thermally grown $SiO_2$ on 4H-SiC is limited by high oxide charges due to carbon clusters at the $SiC/SiO_2$ interface and near-interface states in $SiO_2$; this can be resolved via low-temperature deposition. In this study, low-temperature $SiO_2$ deposition on a Si substrate was optimized for $SiO_2/4H-SiC$ MOS capacitor fabrication; oxide formation proceeded without the need for post-deposition annealing. The $SiO_2/4H-SiC$ MOS capacitor samples demonstrated stable capacitance-voltage (C-V) characteristics, low voltage hysteresis, and a high breakdown field. Optimization of the treatment process is expected to further decrease the effective oxide charge density.