• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.285-286
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• 2007

Current distributions according to electrode patterns in vertical structured InGaN/GaN LED (light emitting diode) were investigated quantitatively by utilizing three dimensional electrical circuit modeling method. The uniformity of the injected current density in the active layer was compared among different electrode patterns. It was found that the current uniformity was greatly dependent on the electrode pattern in vertical InGaN/GaN LEDs.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.3
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• pp.106-110
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• 2004

The operating condition of the OLED (organic light-emitting diode) is very sensitive to electrode thickness properties. The electrode thickness is a significant issue in the construction of OLEDs because of its transparency, high conductivity and high efficiency as an injector into organic materials. We carried out a systematic study to optimize the electrode thickness conditions in Indiumtin oxide (ITO), Molybdenum (Mo) and Aluminum (Al). Further, we measured electrode thickness under standard conditions [ITO 1500$\AA$, Mo 2600$\AA$, Al 1500$\AA$]. We also evaluated power consumption. In addition, we analyzed substrate uniformity with IVL measurement results. From these results, it is known that the electrode thickness should be optimized in order to accomplish optimal power efficiency.

• Journal of the Korean Chemical Society
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• v.52 no.5
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• pp.482-487
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• 2008

• Transactions on Electrical and Electronic Materials
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• v.3 no.4
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• pp.27-31
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• 2002

Thin film diode with reliable interfacial structure was fabricated by using multi-step anodic oxidation. The thickness of the oxide layer was preciously controlled with anodic voltage. Also, interfacial structure between oxide layer and top electrode was improved by applying post heat-treatment. The thin film diode showed symmetric and stable I-V characteristics after the post heat-treatment.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.178-180
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• 1993

The back bias effect on the breakdown voltage of SOI $p^+$-n diode is investigated. The breakdown voltage of the SOI $p^+$-n diode increases with the applied back bias. When the cathode electrode is used as a back bias, it is necessary to put the dielectric material between the Si-substrate and the bottom cathode electrode.

• Journal of the Korean Electrochemical Society
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• v.3 no.1
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• pp.39-43
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• 2000

The light emitting diode (LED) was fabricated from n-type porous silicon. We investigated both the current-voltage characteristics of the LED with various electrode materials and changes of electroluminescence with applied current density. Also we probed changes in electroluminescence as a function of operation time at a given current. In order to Improve the contact area between the electrode material and porous silicon layer, we deposited indium on porous silicon layer by electroplating and investigated the electric characteristics of the LED and changes of electroluminescence.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.3
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• pp.12-17
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• 2011

In this paper, we report on the improved electrical and optical characteristics for decreasing current crowding effect and uniform current distribution by designing octagonal finger type electrode pattern in large-scale lateral GaN (Gallium Nitride) LED (Light-emitting diode) with numerical 3-D simulator. Compared with the conventional electrode pattern, proposed electrode pattern was investigated to confirm the improvement of characteristics. From the simulation results of 3-D SpeCLED/RATRO simulator, we found that the forward voltage was decreased by 0.34 V and the light output power was improved by 7.72 mW at the same injection current condition in the LED with proposed octagonal finger type electrode.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.05a
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• pp.624-627
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• 2002

A study on machining electrode for LEO(Light Emitted Diode) mold with shaped end-mill is presented. The electrode machining by shaped end-mill has been used for maximizing the productivity in manufacture of semiconductor mold. However, it has not been researched systematically for many difficulties such as the making of shaped end-mill, generation of tool path due to distinctive tool geometry, and so on. Tool path is generated on the shaped end-mill geometry and cutting force to provide accurate and efficient machining of electrode. The verification program can drive enhancement of productivity, selecting cutting conditions from experiment function of cutting force. Also, compensation of tooting and machina error can make the electrode accurate by modifying tool path. Therefore, the research on machining with shaped end-mill can contribute to enhancement of accuracy and productivity in building semiconductor mold.

• Transactions on Electrical and Electronic Materials
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• v.3 no.4
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• pp.32-35
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• 2002

In this work, we test electrode material of TFD (Thin Film Diode) device subject to flexible substrate. Al, that is ductile metal, was proper for flexible electrode to fabricate flexible display. The fabricated devices had symmetric electrode structure on both sides of insulation layer. The electrode was made of ductile Al so as to reduce the mismatch of properties between the electrode and substrate. The TFD device was successfully fabricated applying our own etch-free process. Electrical properties were improved by post-annealing.

• Korean Journal of Materials Research
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• v.30 no.8
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• pp.421-425
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• 2020

A transparent quantum dot (QD)-based light-emitting diode (LED) with silver nanowire (Ag NW) and indium-tin oxide (ITO) hybrid electrode is demonstrated. The device consists of an Ag NW-ITO hybrid cathode (-), zinc oxide, poly (9-vinylcarbazole) (PVK), CdSe/CdZnS QD, tungsten trioxide, and ITO anode (+). The device shows pure green-color emission peaking at 548 nm, with a narrow spectral half width of 43 nm. Devices with hybrid cathodes show better performances, including higher luminance with higher current density, and lower threshold voltage of 5 V, compared with the reference device with a pure Ag NW cathode. It is worth noting that our transparent device with hybrid cathode exhibits a lifetime 9,300 seconds longer than that of a device with Ag NW cathode. This is the reason that the ITO overlayer can protect against oxidization of Ag NW, and the Ag NW underlayer can reduce the junction resistance and spread the current efficiently. The hybrid cathode for our transparent QD LED can applicable to other quantum structure-based optical devices.