Proceedings of the Optical Society of Korea Conference (한국광학회:학술대회논문집)

Optical Society of Korea (한국광학회)
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Electrode Pattern Dependency of Vertical Structured InGaN/GaN Light Emitting Diode

수직형구조 InGaN/GaN 발광다이오드의 전극 패턴 의존성

  • 윤주선 (한양대학교 고속회로연구실) ;
  • 황성민 (한양대학교 고속회로연구실) ;
  • 심종인 (한양대학교 고속회로연구실)
  • Published : 2007.07.01
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Abstract

Current distributions according to electrode patterns in vertical structured InGaN/GaN LED (light emitting diode) were investigated quantitatively by utilizing three dimensional electrical circuit modeling method. The uniformity of the injected current density in the active layer was compared among different electrode patterns. It was found that the current uniformity was greatly dependent on the electrode pattern in vertical InGaN/GaN LEDs.

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