• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.28-28
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• 1998

• Proceedings of the Korean Society of Laser Processing Conference
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• 1998.11a
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• pp.56-59
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• 1998

• Journal of the Korean Institute of Telematics and Electronics
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• v.12 no.1
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• pp.27-33
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• 1975

The required minimum size of character diode matrix of Korean letters is estimated from the topological complexity of letter structure. The OR aombination of three letter boards (diode matrice) gives all possible Hangout whole letters in proper traditional combined form with minimum required discernibility. Two forms of first consonants (centre located ones for horizontal vowels and leftward displaced ones for vertical and composed vowels) are switched by only 1 bit of the vowel code. The vowel pattern length is modified by again the last four bits of the code. A new 15bit sized inner code is proposed which permits considerably small sized decoding mechanism.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.9
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• pp.5460-5466
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• 2014

In this study, mainly for kitchen knives and small swords, cutlery, etc. STS420J2 used material used for the experiments. In order to cure the surface of the test piece after the rough grinding and fine grinding was performed in order polishing. Perform the surface hardening of STS420J2 local area by using a diode laser. The output of the laser diode and the feed rate to the process variable. Micro-hardness testing, microstructure testing, scanning electron microscope testing(SEM), the heat input to the analysis. After analyzing the experiment to compare the mechanical properties of the material. When using a diode laser to assess the soundness of the surface hardening. Accordingly, the process for deriving the optimum demonstrate the feasibility.

• Asian Pacific Journal of Cancer Prevention
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• v.16 no.18
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• pp.8383-8386
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• 2016

Background: To evaluate the safety, convenience and effectiveness of 940nm diode laser for treatment of homogenous leukoplakia. Materials and Methods: Ten patients having homogenous leukoplakia which were diagnosed clinically were selected from an Indian dental educational institution for the study. Toludine blue staining was applied locally over the lesion. The area where there was increased uptake of stain was excised using a 940 nm EZLASE TM diode laser (BIOLASE-USA). Results: Although various treatment modalities have been tried and the search continues for novel treatment modalities for complete removal of homogenous leukoplakia, from results of our preliminary pilot study it is clear that the use of 940 nm diode laser as a treatment modality for homogenous leukoplakia is a good substitute. Healing was perfect without any complication within a duration of 1 month. Pain intensity was also mild and absolutely zero on the VAS scale after 1 month follow up. Conclusions: 940 nm diode lasers are safe and can be effectively used as a treatment modality of homogenous leukoplakia, without any complication and without compromising health and oral function of patients. Considering recurrence factor, long term follow up for patients is a must.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.664-674
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• 2016

The electrical properties of Ti/p-type InP Schottky diodes with and without polyaniline (PANI) interlayer was investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements. The barrier height of Ti/p-type InP Schottky diode with PANI interlayer was higher than that of the conventional Ti/p-type InP Schottky diode, implying that the organic interlayer influenced the space-charge region of the Ti/p-type InP Schottky junction. At higher voltages, the current transport was dominated by the trap free space-charge-limited current and trap-filled space-charge-limited current in Ti/p-type InP Schottky diode without and with PANI interlayer, respectively. The domination of trap filled space-charge-limited current in Ti/p-type InP Schottky diode with PANI interlayer could be associated with the traps originated from structural defects prevailing in organic PANI interlayer.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.1 s.92
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• pp.92-101
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• 2005

In this paper, the Gunn diode mount is experimentally designed for use in a W-band waveguide voltage controlled oscillator(VCO). The role of the Gunn diode mount is to match the low impedance of the Gunn diode to the high impedance of waveguide. Computer simulations of VCO characteristics such as center frequency, frequency tuning range, and output power are carried out for various values of disc diameter, disc height, post diameter, and utilized in the experimental optimization of the Gunn diode mount. The designed VCO shows excellent characteristics; 93.9 GHz center fiequency, 600 MHz frequency tuning range with $2{\%}$ linearity, 16 dBm output power.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.3
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• pp.258-264
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• 2004

In this paper, MMIC double balanced star mixer for 40 ㎓ was implemented on GaAs substrate with backside vias. In the design of the MMIC mixer, the design of balun and diode was required. A novel balun structure using microstrip to CPS was presented. The 40 ㎓ balun was designed based on the design experience of the scale-down balun by 2 ㎓. The balun may be suitable for fabrication in MMIC process with backside via and can easily be applied for DBM(Double Balanced Mixer). A Schottky diode was designed and implemented using p-HEMT process considering the compatability with other high frequency MMIC's fabricated on p-HEMT base process. Finally, the double balanced star mixer was fabricated using the balun and the p=HEMP Schottky diode. The measured performance of mixer shows 30 ㏈ conversion loss at 18 ㏈m LO power. This insufficient performance is caused by the unwanted diode at AlGaAs junction in vertical structure of p-HEMT. If the p-HEMT's gate is recessed to AlGaAs layer, and so the diode is eliminated, the mixer's performances will be improved.

• Korean Journal of Head & Neck Oncology
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• v.17 no.1
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• pp.3-7
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• 2001

Objectives: New photosensitizer 9-hydroxypheophorbide-$\alpha$(9-HpbD-$\alpha$) was derived from chlorophyll in water with peak absorption at 660nm. 9-HpbD-$\alpha$ was tested with 660 nm diode laser for the anticancer effect of photodynamic therapy. Materials and Methods: Human SNU 1041 cells were seeded into 96 well plate at a density of $$ cells/well for 24 hours. Cells were washed with media containing various concentration of 9-HpbD-$\alpha$ ranging from $0{\mu}g/ml\;to\;3.75{\mu}g/ml$. Then, laser treatment was done with 660nm diode laser ($10mW/cm^2$) at various time setting (0, 30, 60, 90, 120 minutes) and with various time interval (0, 1, 4, 6, 18 hours). The treated cells were incubated 48 hours and MTT assay was done to measure the viability of cells. Results: The viability of cells was more than 90% after laser treatment in control group. The viability of cells was decreased with increasing concentration of 9-HpbD-$\alpha$ and laser treatment time in experimental groups. The viability of cells was decreased significantly as the interval time between addition of 9-HpbD-$\alpha$ and laser irradiation was increased. Conclusion: This study shows the anticancer effect of photodynamic therapy using 9-HpbD-$\alpha$ and 660nm Diode laser on carcinoma cell line. 9-HpbD-$\alpha$ is considerd as one of new photo sensitizers in the field of photodynamic therapy.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.4 s.107
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• pp.368-379
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• 2006

In this paper, the analytic design technique for a planar PIN diode limiter is presented rather than the conventional design heavily relying on the experiments. The novel analysis fur the PIN diode limiter shows the leakage is composed of two kinds of leakages and the relationship between the leakages and the PIN diode parameters. The designed limiter consists of 3 stages; the front two stages with two PM diodes and the final stage with Schottky diode pair. The fabricated limiter shows the insertion loss of 0.8 dB for the small input power, spike leakage of 12 Bm, flat leakage of 12 dBm for the 20 W RF power.