• Journal of the Korean Electrochemical Society
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• v.12 no.1
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• pp.1-10
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• 2009

This article reviewed transport behaviours of electroactive species in ionic compounds, focusing on chemical diffusion of Li through the transition metal oxide in a current flowing condition. For this purpose, a distinction has been first briefly made between migration and diffusion with respect to current, driving force and charge of electroactive species considered. Then, the equations for chemical diffusion are derived theoretically in open-circuit and current flowing conditions. Finally, the experimental methods such as ac impedance spectroscopy and current (potential) transient techniques are described in details for characterising chemical diffusion. In addition, the role of the thermodynamic enhancement factor in chemical diffusion is discussed.

• Journal of Sensor Science and Technology
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• v.17 no.5
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• pp.329-337
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• 2008

Simple, small and portable oxygen sensors were fabricated by tape casting technique. Yttria stabilized zirconia containing cordierite ceramics (YSZC) were used as a porous diffused layer of oxygen in pumping cell. Yttria stabilized zirconia (YSZ) solid electrolyte, YSZC porous diffusion layer and heater-patterned ceramic sheets were prepared by co- firing method. Limit current characteristics and the linear relationship of current to oxygen concentration were observed. Viscosity variation of the slurries both YSZ and YSZC showed a similar behavior, but micro pores in the fired sheet were increased with increasing of the cordierite amount. Molecular diffusion was dominated due to the formation of large pores in porous diffusion layer. The plateau range of limit current in porous-type oxygen sensor was narrow than the one of aperture-type oxygen sensor. However limit current curve was appeared in porous-type oxygen sensor even at the lower applied voltage. The plateau range of limit-current was widen as increasing the thickness of porous diffusion layer of the YSZ containing cordierite. Measuring temperature of $600{\sim}650^{\circ}C$ was recommended for limit-current oxygen sensor. Porous diffusion layer-type oxygen sensor showed faster response than the aperture-type one and was stable up to 30 days running without any crack at interface between the layers.

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.225-228
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• 2017

In this study, zinc tin oxide (ZTO) films were prepared on indium tin oxide (ITO) glasses and annealed at different temperatures under vacuum to investigate the correlation between the Ohmic/Schottky contacts, electrical properties, and bonding structures with respect to the annealing temperatures. The ZTO film annealed at $150^{\circ}C$ exhibited an amorphous structure because of the electron-hole recombination effect, and the current of the ZTO film annealed at $150^{\circ}C$ was less than that of the other films because of the potential barrier effect at the Schottky contact. The drift current as charge carriers was similar to the leakage current in a transparent thin-film device, but the diffusion current related to the Schottky barrier leads to the decrease in the leakage current. The direction of the diffusion current was opposite to that of the drift current resulting in a two-fold enhancement of the cut-off effect of leakage drift current due to the diffusion current, and improved performance of the device with the Schottky barrier. Hence, the thin film with an amorphous structure easily becomes a Schottky contact.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.2
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• pp.97-101
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• 2003

New Pt/Ti and hi/Ti double-metal structures have been investigated for the application of a diffusion barrier between Cu and Si in deep submicron integrated circuits. Pt/Ti and Ni/Ti were deposited using E-beam evaporator at room temperature. The performance of Pt/Ti and Ni/Ti structures as diffusion barrier against Cu diffusion was examined by charge pumping method, gate leakage current, junction leakage current, and SIMS(secondary ion mass spectroscopy). These evaluation indicated that Pt/Ti(200${\AA}$/100${\AA}$) film is a good barrier against Cu diffusion up to 450$^{\circ}C$.

• Proceedings of the Korea Concrete Institute Conference
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• 2003.05a
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• pp.705-710
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• 2003

In this study, to confirm the diffusion coefficient of chloride ion is affected by the concentration of NaCl solution, capacity of voltage, time of an electric current, the diffusion coefficient of chloride ion in concrete was investigated through an electrochemical accelerated test. and the results of these test were compared with the diffusion coefficient of chloride ion by test of sodium chloride solution digestion. As the results of this study, the diffusion coefficient of chloride ion wasn't affected by the concentration of NaCl solution, capacity of voltage, time of an electric current within the range of this study and was similar to the diffusion coefficient of chloride ion by test of sodium chloride solution digestion.

• Journal of Ocean Engineering and Technology
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• v.23 no.4
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• pp.64-68
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• 2009

It has been observed that coated steel structures deteriorate more rapidly than the designed lifetime due to acid rain caused by air pollution, etc. Therefore, improving the corrosion resistance of anti-corrosive paint is very important in terms of safety and the economic point of view. In this study, the corrosion resistance of five kinds of anti-corrosive paints, including the Acryl, Fluorine, and Epoxy resin series, were investigated with electrochemical methods, such as corrosion potential measurements, polarization curves, diffusion limiting current density, etc. As a result, the corrosion resistance of the F101 specimen with the fluorine resin series was found to be superior to the other specimens, while E100 with the epoxy resin series also showed a somewhat good corrosion resistance. Furthermore, it was observed that the amount of water and oxygen entering the inner side of a painted film increased with an increase in immersion time, irrespective of the kind of resin series. However, the oxygen diffusion limiting current density of a specimen with good corrosion resistance was relatively decreased compared to other specimens, because of the difficulty of oxygen diffusion penetrating to the inner side of the film. Consequently it is suggested that we can qualitatively evaluate the corrosion resistance of an anti-corrosive paint by measuring the diffusion limiting current density as an electrochemical method.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.187-190
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• 1991

The analytical model to investigate the effects of the drift and diffusion carrier transport upon the Hall effect is presented and applied to the general PN junction structure. The diffusion current effect on the Hall coefficient can not be considered in the conventional model, which produces the conversion of the direction of the induced Hall field between measured and calculated values. The proposed analytical model which considers the diffusion current effect provides the coincident results with the previous experimental results.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1697-1699
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• 2004

In this investigation, we have studied the diffusion of the $Cu^+$ ion in the Cu/Ta/SiOCH/Si and Cu/Ta/$SiO_2$/Si MIS-C structure. The Cu ions diffusion into the Ta barrier and SiOCH was examined by shift in flatband voltage of capacitance-voltage measurement and leakage current of current-voltage measurement. These evalution indicated that $Cu^+$ ion diffusion rate in Ta/SiOCH is considerably lower then the Ta/$SiO_2$ structure. And diffusion barrier Ta(50[nm]) is useful barrier against $Cu^+$ ion diffusion up to 450$^{\circ}C$.

• Current Optics and Photonics
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• v.2 no.6
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• pp.514-518
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• 2018

Carrier diffusion length in the light-sensitive material is one of the key elements in improving the light-current conversion efficiency of solar-cell devices. In this paper, we measured the carrier diffusion length in lead-halide perovskite ($MAPbI_3$) and mixed lead-halide ($MAPbI_{3-x}Cl_x$) perovskite devices using scanning photocurrent microscopy (SPCM). The SPCM signal decreased as we moved the focused laser spot away from the metal contact. By fitting the data with a simple exponential curve, we extracted the carrier diffusion length of each perovskite film. Importantly, the diffusion length of the mixed-halide perovskite was higher than that of the halide perovskite film by a factor of 3 to 6; this is consistent with the general expectation that the carrier mobility will be higher in the case of the mixed lead-halide perovskites. Finally, the diffusion length was investigated as a function of applied bias for both samples, and analyzed successfully in terms of the drift-diffusion model.

• Journal of Information Processing Systems
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• v.18 no.1
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• pp.59-74
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• 2022

During the last decade, the security of digital images has received considerable attention in various multimedia transmission schemes. However, many current cryptosystems tend to adopt a single-layer permutation or diffusion algorithm, resulting in inadequate security. A hierarchical bilateral diffusion architecture for color image encryption is proposed in response to this issue, based on a hyperchaotic system and DNA sequence operation. Primarily, two hyperchaotic systems are adopted and combined with cipher matrixes generation algorithm to overcome exhaustive attacks. Further, the proposed architecture involves designing pixelpermutation, pixel-diffusion, and DNA (deoxyribonucleic acid) based block-diffusion algorithm, considering system security and transmission efficiency. The pixel-permutation aims to reduce the correlation of adjacent pixels and provide excellent initial conditions for subsequent diffusion procedures, while the diffusion architecture confuses the image matrix in a bilateral direction with ultra-low power consumption. The proposed system achieves preferable number of pixel change rate (NPCR) and unified average changing intensity (UACI) of 99.61% and 33.46%, and a lower encryption time of 3.30 seconds, which performs better than some current image encryption algorithms. The simulated results and security analysis demonstrate that the proposed mechanism can resist various potential attacks with comparatively low computational time consumption.