DIFFUSION CURRENT EFFECT ON THE HALL COEFFICIENT IN A MAGNETIC FIELD SENSOR

자기센서내에서 확산 전류가 홀 계수에 미치는 영향

The analytical model to investigate the effects of the drift and diffusion carrier transport upon the Hall effect is presented and applied to the general PN junction structure. The diffusion current effect on the Hall coefficient can not be considered in the conventional model, which produces the conversion of the direction of the induced Hall field between measured and calculated values. The proposed analytical model which considers the diffusion current effect provides the coincident results with the previous experimental results.