• Title/Summary/Keyword: Diffusion barrier

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Analysis of Lattice constants change for study of W-C-N Diffusion (W-C-N 확산방지막의 격자상수 변화 분석을 통한 특성 연구)

  • Kim, Soo-In;Lee, Chang-Woo
    • Journal of the Korean Vacuum Society
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    • v.17 no.2
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    • pp.109-112
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    • 2008
  • The miniaturization of device size and submicron process causes serious problems in conventional metallization due to the solubility of silicon and metal at the interface, such as an increasing contact resistance in the contact hole and interdiffusion between metal and silicon. Moreover, the interaction between Cu and Si is so strong and detrimental to the electrical performance of Si even at temperatures below $200^{\circ}C$. Therefore it is necessary to implement a barrier layer between Cu and Si. So we study W-C-N diffusion barrier for prevent Cu diffusion as a function of $N_2$ gas flow and thermal stability. Especially, we also study the W-C-N diffusion barrier for analyzing the change of lattice constants.

Development of Plasma Assisted ALD equipment and electrical characteristic of TaN thin film deposited PAALD method (Plasma Assisted ALD 장비 계발과 PAALD법으로 증착 된 TaN 박막의 전기적 특성)

  • Do Kwan-Woo;kim Kyoung-Min;Yang Chung-Mo;Park Seong-Guen;Na Kyoung-Il;Lee Jung-Hee;Lee Jong-Hyun
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2005.05a
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    • pp.139-145
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    • 2005
  • In the study, in order to deposit TaN thin film using diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristic of TaN thin films deposited PAALD method, PAALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamlno) tantalum) Precursor and $NH_3$ reaction gas is aware that TaN thin film deposited of high density and amorphous phase with XRD measurement The degree of diffusion and react ion taking place in Cu/TaN(deposited using 150 W PAALD)/$SiO_2$/Si systems with increasing annealing temperature was estimated from MOS capacitor property and the $SiO_2(600\;\AA)$/Si system surface analysis by C-V measurement and secondary ion material spectrometer(SIMS) after Cu/TaN/$SiO_2(400\;\AA)$ system etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to $500^{\circ}C$.

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Development of Plasma Assisted ALD equipment and Electrical Characteristic of TaN thin film deposited PAALD method (Plasma Assisted ALD 장비 계발과 PAALD법으로 증착 된 TaN 박막의 전기적 특성)

  • Do Kwan Woo;Kim Kyoung Min;Yang Chung Mo;Park Seong Guen;Na Kyoung Il;Lee Jung Hee;Lee Jong Hyun
    • Journal of the Semiconductor & Display Technology
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    • v.4 no.2 s.11
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    • pp.39-43
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    • 2005
  • In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.

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Characteristics of W-C-N Thin Diffusion Barrier for Cu Interconnection (Cu 금속배선을 위한 카본-질소-텅스텐 확산방지막 특성)

  • Lee, Chang-Woo
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.4 s.37
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    • pp.345-349
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    • 2005
  • Low resistive ($300{\mu}{\Omega}$-cm) W-C-N films have been deposited on tetraethylorthosilicate (TEOS) interlayer dielectric by atomic layer deposition (ALD) with $WF_6-N_2-CH_4$ gas. The exposure cycles of $N_2$ and $CH_4$ are synchronized with pulse plasma. The W-C-N films on TEOS layer follow the ALD mechanism and keep constant deposition rate of 0.2 nm/cycle from 10 to 100 cycles. As a diffusion barrier for Cu interconnection the W-C-N films maintain amorphous phase and Cu inter-diffusion is not occurred even at $800^{\circ}C$ for 30 min.

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Improvement in Long-term Stability of Pd Alloy Hydrogen Separation Membranes (팔라듐 합금 수소분리막의 내구성 향상)

  • Kim, Chang-Hyun;Lee, Jun-Hyung;Jo, Sung-Tae;Kim, Dong-Won
    • Journal of the Korean institute of surface engineering
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    • v.48 no.1
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    • pp.11-22
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    • 2015
  • Pd alloy hydrogen membranes for hydrogen purification and separation need thermal stability at high temperature for commercial applications. Intermetallic diffusion between the Pd alloy film and the porous metal support gives rise to serious problems in long-term stability of Pd alloy membranes. Ceramic barriers are widely used to prevent the intermetallic diffusion from the porous metal support. However, these layers result in poor adhesion at the interface between film and barrier because of the fundamentally poor chemical affinity and a large thermal stress. In this study, we developed Pd alloy membranes having a dense microstructure and saturated composition on modified metal supports by advanced DC magnetron sputtering and heat treatment for enhanced thermal stability. Experimental results showed that Pd-Cu and Pd-Ag alloy membranes had considerably enhanced long-term stability owing to stable, dense alloy film microstructure and saturated composition, effective diffusion barrier, and good adhesive interface layer.

Diffusion barrier properties of MOCVD TiN thin film for AI planarization technology (AI planarization 기술에서 MOCVD TiN 박막의 barrier 특성)

  • 홍정의;김창렬;김준기;변정수;나관구;김우식
    • Journal of the Korean Vacuum Society
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    • v.4 no.S1
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    • pp.21-27
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    • 1995
  • AI planarization 공정을 위한 barrier로서 CVD 및 PVD 방법에 의해 증착된 TiN 박막의 특성에 대하여 연구하였다. CVD TiN은 TDMAT source를 사용한 MOCVD방법으로 증착하였으며, PVD TiN은 1:1 aspect ratio(A/R)를 갖는 collimator를 사용한 reactive wputtering법으로 증착하였다. AES, SEM을 이용하여 CVD TiN과 PVD TiN의 조성을 분석하고 barrier 특성을 평가하였다. CVD TiN, PVD TiN 모두 400$\AA$의 두께와 RTA 처리에 의해서 AI planarization에 대한 양호한 barrier 특성을 확보할 수 있었다.

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Computer Simulation of Pt-GaAs Schottky Barrier Diode (Pt-GaAs Schottky Barrier Diode의 Computer Simulation)

  • Yoon, Hyun-Ro;Hong, Bong-Sik
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.27 no.3
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    • pp.101-107
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    • 1990
  • In this work, one-dimensional simulation is carried out for PT-GaAs Schottky barrier diodes with finite difference method. Shockley's semiconductor governing equations: Poisson equation and current continuity equation are discertized, and linearized by Newton-Raphson method. The linear system of equation is solved by Gaussian elimination method until convergence is achieved. The boundary condition for this equation is taken from thermionic emission-diffusion theory. Simulation is done for PT-GaAs epitaxial-layer Schottky barrier diodes. The claculated results of electron and potential distribution are shown. Simulation results show exellent agreement with experiments.

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MO-COMPOUNDS AS A DIFFUSION BARRIER BETWEEN Cu AND Si

  • Kim, Ji-Hyung;Lee, Yong-Hyuk;Kwon, Yong-Sung;Yeom, Geun-Young;Song, Jong-Han
    • Journal of the Korean institute of surface engineering
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    • v.29 no.6
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    • pp.683-690
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    • 1996
  • In this study, the diffusion barrier properties of $1000 \AA$ thick molybdenum compounds (Mo, Mo-N, $MoSi_2$, Mo-Si-N) were investigated using sheet resistance measurements, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Scanning electron microscopy (SEM), and Rutherford backscattering spectrometry (RBS). Each barrier material was deposited by the dc magnetron sputtering, and annealed at 300-$800^{\circ}C$ for 30min in vacuum. Mo and $MoSi_2$ barrier were failed at low temperature due to Cu diffusion through grain bound-aries and defects of Mo thin film and the reaction of Cu with Si within $MoSi_2$ respectively. A failure temperature could be raised to $650^{\circ}C$-30min in the Mo barrier system and to $700^{\circ}C$-30min in the Mo-silicide system by replacing Mo and $MoSi_2$ with Mo-N and Mo-Si-N, respectively. The crystallization temperature in the Mo-silicide film was raised by the addition of $N_2$. It is considered that not only the N, stuffing effect but also the variation of crystallization temperature affects the reaction of Cu with Si within Mo-silicide. It was found that Mo-Si-N is more effective barrier than Mo, $MoSi_2$, or Mo-N to copper penetration preventing Cu reaction with the substrate for 30min at a temperature higher than $650^{\circ}C$.

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Permeability Characteristics of Geosynthetics Vertical Barrier Connections for the Prevention of Contaminants Diffusion (오염물질 확산방지를 위한 토목섬유 연직차수벽 연결부의 투수성능 평가)

  • Park, Jeong Jun
    • Journal of the Society of Disaster Information
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    • v.18 no.1
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    • pp.1-9
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    • 2022
  • Purpose: In this study, we used hydrophilic waterstop used in geosynthetics vertical barrier system to evaluate the performance of impermeability under sealing conditions. Method: ASTM D5887 and ASTM D6766 were applied to determine the capability of the connection during the geosynthetics vertical barrier system. Hydrophilic waterstop was saturated in each solution and the weight, thickness, and volume changes were analyzed over elapsed time. Hydrophilic waterstop was installed at the geosynthetics vertical barrier system connection to evaluate the permeability characteristics. Results: As the expansion reaction time of hydrophilic waterstop increased relatively under saline conditions, the decrease in permeability also showed a smaller decrease in fresh water. Furthermore, the method of engagement of the geosynthetics vertical barrier system showed somewhat better performance of the impermeability due to the large pressure resistance caused by the roll joint type than interlock type. Conclusion: In urban pollutants, which can estimate the outflow of pollutants such as oil storage facilities and industrial complexes, proactive response technologies that can prevent the contaminant diffusion can significantly reduce the damage.