• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.124-126
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• 2002

In this study, composite materials were put to dry interfacial treatment by use of plasma technology. It has been presented that the optimum parameters for the best wettability of the samples at the time of generation of plasma were oxygen atmosphere, 0.1 torr of system pressure, 100 W of discharge power, and 3 minutes of discharge time. Also, the surface resistance rate, dielectric property and tensile strength were improved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.243-247
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• 2003

The effect of accelerated weathering(UV) on three type of ethylene propylene diene monomer(EPDM) composite used for higher voltage insulator were investigated by weather-emoter. For weatherability of EPDM composite, surface resistance, dielectric breakdown strength, change of contact angle, surface composition were measured according to UV accelerated weathering time. From the resort of the measurement of surface resistivity, contact angle of EPDM composite decreased and showed chalking and cracking phenomenon when UV weathweing time was for 1500 h and 2000 h. The analysis of surface atomic composition indicated that surface aluminiu(Al) content was detected due to chalking phenomenon after 1500 h of UV weathering, Oxygen content of all composite increased due to the oxidation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.841-846
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• 2014

It found that the maximum temperature of the arc discharge occurred on the Silicone rubber sample significantly decreased with increasing the reinforcing agent. It was confirmed that the current value decreased with increasing the aluminium trihydrate($Al(OH)_3$) and the current value increased with reducing the primary resistance over time. Regarding these results, may be it is because the degradation due to the electro-conductive carbonization was improved and the properties of dielectric breakdown was reduced by the flame retardant reinforcing agent. It found that the electro-conductive carbonized road has not happened by increasing the flame retardant reinforcing agent. Regarding to the arc discharge, this study show that the arc arising near the lower electrode of sample has disappeared.

• Journal of Electrical Engineering and Technology
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• v.10 no.5
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• pp.2070-2076
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• 2015

Nano composite materials were multi-constituent combinations of nano dimensional phases with distinct differences in structure, chemistry and properties. Nano particles were less likely to create large stress concentrations and thereby can avoid the compromise of the material ductility while improve other mechanical properties. Corona discharge was an electrical discharge. The ionization of a fluid surrounding a conductor was electrically energized. This discharge would occur when the strength of the electric field around the conductor was high enough to form a conductive region, but not high enough to cause electrical breakdown or arcing to nearby objects. This paper shows all the studies done on the preparation of nano fillers. Special attention has given to the ACSR transmission line conductor, TiO₂ nano fillers and also to the evaluation of corona resistance on dielectric materials discussed in detail. The measurement of the dielectric properties of the nano fillers and the parameters influencing them were also discussed in the paper. Corona discharge test reveals that in 0%N ACSR sample corona loss was directly proportional to the applied line voltage. No significant change in corona loss between 0%N and 1%N. When TiO₂ nano filler concentration was increased up to 10%N fine decrement in corona loss was found when compared to base ACSR conductor, corona loss was decreased by 40.67% in 10%N ACSR sample. It was also found from the surface conditions test that inorganic TiO₂ nano filler increases the key parameters like tensile strength and erosion depth.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.117-123
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• 2004

A 30 nm $In_{0.7}GaAs$ High Electron Mobility Transistor (HEMT) with triple-gate has been successfully fabricated using the $SiO_2/SiN_x$ sidewall process and BCB planarization. The sidewall gate process was used to obtain finer lines, and the width of the initial line could be lessened to half by this process. To fill the Schottky metal effectively to a narrow gate line after applying the developed sidewall process, the sputtered tungsten (W) metal was utilized instead of conventional e-beam evaporated metal. To reduce the parasitic capacitance through dielectric layers and the gate metal resistance ($R_g$), the etchedback BCB with a low dielectric constant was used as the supporting layer of a wide gate head, which also offered extremely low Rg of 1.7 Ohm for a total gate width ($W_g$) of 2x100m. The fabricated 30nm $In_{0.7}GaAs$ HEMTs showed $V_{th}$of -0.4V, $G_{m,max}$ of 1.7S/mm, and $f_T$ of 421GHz. These results indicate that InGaAs nano-HEMT with excellent device performance could be successfully fabricated through a reproducible and damage-free sidewall process without the aid of state-of-the-art lithography equipment. We also believe that the developed process will be directly applicable to the fabrication of deep sub-50nm InGaAs HEMTs if the initial line length can be reduced to below 50nm order.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.467-468
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• 2006

We report on the fabrication of P3HT-based thin-film transistors (TFT) that consist of indium-zinc-oxide (IZO), PVP (poly-vinyl phenol), and Ni for the source-drain (S/D) electrode, gate dielectric, and gate electrode, respectively. The IZO S/D electrodes of which the work function is well matched to that of P3HT were deposited on a P3HT channel by thermal evaporation of IZO and showed a moderately low but still effective transmittance of ~25% in the visible range along with a good sheet resistance of ${\sim}60{\Omega}/{\square}$. The maximum saturation current of our P3HT-based TFT was about $15{\mu}A$ at a gate bias of -40V showing a high field effect mobility of $0.05cm^2/Vs$ in the dark, and the on/off current ratio of our TFT was about $5{\times}10^5$. It is concluded that jointly adopting IZO for the S/D electrode and PVP for gate dielectric realizes a high-quality P3HT-based TFT.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.89-96
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• 2006

Recent ULSI and multilevel structure trends in microelectronic devices minimize the line width down to less than $0.25{\mu}m$, which results in high current densities in thin film interconnections. Under high current densities, an EM(electromigration) induced failure becomes one of the critical problems in a microelectronic device. This study is to improve thin film interconnection materials by investigating the EM characteristics in Ag, Cu, Au, and Al thin films, etc. EM resistance characteristics of Ag, Cu, Au, and Al thin films with high electrical conductivities were investigated by measuring the activation energies from the TTF (Time-to-Failure) analysis. Optical microscope and XPS (X-ray photoelectron spectroscopy) analysis were used for the failure analysis in thin films. Cu thin films showed relatively high activation energy for the electromigration. Thus Cu thin films may be potentially good candidate for the next choice of advanced thin film interconnection materials where high current density and good EM resitance are required. Passivated Al thin films showed the increased MTF(Mean-time-to-Failure) values, that is, the increased EM resistance characteristics due to the dielectric passivation effects at the interface between the dielectric overlayer and the thin film interconnection materials.

• Journal of the Korean Society for Nondestructive Testing
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• v.24 no.5
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• pp.508-517
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• 2004

We described a near-field scanning microwave microscope which uses a high-quality dielectric resonator with a tunable screw. The operating frequency is f=4.5 5GHz. The probe tip is mounted in a cylindrical resonant cavity coupled to a dielectric resonator We developed a hybrid tip combining a reduced length of the tapered part with a small apex. In order to understand the function of the probe, we fabricated three different tips using a conventional chemical etching technique and observed three different NSMM images for patterened Cr films on glass substrates. We measured the reflection coefficient of different metal thin film samples with the same thickness of 300m and compared with theoretical impedance respectly. By tuning the tunable screw coming through the top cover, we could improve sensitivity, signal-to-noise ratio, and spatial resolution to better than $1{\mu}m$. To demonstrate the ability of local microwave characterization, the surface resistance of metallic thin films has been mapped.

• Journal of the Korean Magnetics Society
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• v.15 no.3
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• pp.202-206
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• 2005

The present investigation provides an electromagnetic radiation absorptive composition which comprises silver-coated ferrite microspheres dispersed in silicon rubber matrix for the aim of thin microwave absorber in GHz frequencies. Ni-Zn ferrite spheres with $50{\mu}m$ size in average were prepared by spray-drying and sintering at $1130^{\circ}C$. Conductive silver layer was plated on ferrite spheres by electroless plating. Conductive Ni-Zn ferrite sphere with uniform silver layer were obtained in the concentration of 10 g/L $AgNO_3$ per 20 g ferrite spheres. For this powder, electrical resistance is reduced as low as $10^{-2}\~10^{-3}\;\Omega$. The most sensitive material parameters with silver plating is real and imaginary parts of complex permittivity. The conductive Ni-Zn ferrite spheres have large values of dielectric constant. Due to this high dielectric constant of microspheres, matching thickness is reduced to as low as 2 mm at the frequency of 7 GHz, which is much thinner than conventional ferrite absorbers.

• Nuclear Engineering and Technology
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• v.6 no.1
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• pp.14-22
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• 1974

Effects of anodization voltage on frequency characteristics of anodic oxide films on tantalum were analyzed based on the following impedance equatious : (equation omitted) Here $R_{f}$, $C_{f}$ and tan $\delta$$_{f}$ are equivalent series resistance in ohm, equivalent Belies capacitance in farad and dielectric loss, of anodic oxide films respectively Parameters P, $\tau$$_{ο}$, $\tau$$_{\omega}$, and Co are defined as follows: P=(d-w)/w, $\tau$$_{ο}$=$textsc{k}$$\rho$$_{ο}$, $\tau$$_{\omega}$=$textsc{k}$$\rho$$_{\omega}$, $C_{ο}$=$textsc{k}$A/d where d is the thickness of oxide film, $\omega$ is the diffusion layer thickness. $\rho$$_{ο}$ is the resistivity of oxide film at the interface of metal and the oxide, $\rho$$_{\omega}$ is the resistivity of oxide film at intrinsic region and A is the area of the film and $textsc{k}$=0.0885$\times$10$^{-12}$ $\times$dielectric constant, (in farad/cm). It was shown that dielectric loss and frequency dependence of equivalent series capacitance decrease as anodization voltage increases. This is a consequence of the fact that the thickness of diffusion layer increases a little with increasing anodization voltage whereas the total oxide thickness is proportional to the anodization voltage. The ngative deviation of measured values from tile relation, tan $\delta$$_{f}$=0.682 $\Delta$ $C_{f}$, was also discussed based on the Impedance equations given above. Here $\Delta$ $C_{f}$ is the change in capacitance between 0.1 and 1 KHZ.KHZ.Z.