• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.119-119
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• 2010

Among the various factors influencing the service life of the electric equipment, the performance of dielectric insulation materials has an important role to determine their whole service life. In order to determine the degradation of insulating materials immersed in extremely low temperature media such as liquid nitrogen, the abrupt temperature change from cryogenic to normal room temperature should be considered. But the assessments of low-temperature aging test method for the dielectric materials immersed in liquid nitrogen considering these conditions were not fully reported. Therefore, for the fundamental step to establish the suitable degradation test methods for cryogenic dielectric materials, we focused on the evaluation of ageing test methods for dielectric materials exposed to low temperature environments considering thermal shock by cool-down and warm up test.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.528-528
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• 2007

Cu CMP widely has been using for the formation of multilevel metal interconnects by the Cu damascene process. And lower dielectric constant materials are required for the below 45nm technology node. As the dielectric constant of dielectric materials are smaller, the strength of dielectric materials become weaker. Therefore these materials are easily damaged by high down pressure during conventional CMP. Also, technical problems such as surface scratches, delamination, dishing and erosion are also occurred. In order to overcome these problems in CMP, the ECMP (electro-chemical mechanical planarization) has been introduced. In this process, abrasive free electrolyte, soft pad and low down force were used. The electrolyte is one of important factor to solve these problems. Also, additives are required to improve the removal rate, uniformity, surface roughness, defects, and so on. In this study, KOH and $NaNO_3$ based electrolytes were used for Cu ECMP and the electrochemical behavior was evaluated by the potentiostat. Also, the Cu surface was observed by SEM as a function of applied voltage and chemical concentration.

• 한국재료학회지
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• 제13권12호
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• pp.801-805
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• 2003

To explore the annealing temperature dependence of dielectric properties $Ta_2$$O_{5}$ thin films were prepared by MOCVD(metal-organic chemical vapor deposition) and MOD(metal-organic decomposition). The $Ta_2$$O_{5}$thin films fabricated MOCVD and MOD were annealed in $O_2$at temperature between 600 and 90$0^{\circ}C$. The measured dielectric constant of both films at 100 KHz was the highest value at $650^{\circ}C$ and decreased with increasing annealing temperature above $650^{\circ}C$. Plane-view SEM image showed that the boundary seems to be crack broke out with increasing annealing temperature. It was confirmed that outbreak of boundary influenced a decrease of dielectric constant with increasing annealing temperature. The leakage current density increased with increasing annealing temperature.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2006년도 춘계학술발표대회 및 제10회 신소재 심포지엄 논문개요집
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• pp.27.1-27.1
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• 2006

• 한국전기전자재료학회논문지
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• 제21권12호
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• pp.1118-1123
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• 2008

High voltage multilayer ceramic capacitors (MLCCs) are classified into two classes-those for temperature compensation (class I) and high dielectric constant materials (class II). We manufactured high voltage MLCC with temperature coefficient characteristics of C0G and X7R and studied the characteristics of electric properties. Also we studied the characteristics of dielectric breakdown voltage (V) as the variation of thickness in the green sheet and how to pattern the internal electrodes. The dielectric breakdown by electric field was caused by defects in the dielectric materials and dielectric/electrode interface, so the dielectric thickness increased, the withstanding voltage per unit (E) thickness decreased. To overcome this problem, we selected the special design like as floating electrode and this design affected the increasing breakdown voltage(V) and realized the constant withstanding voltage per unit thickness(E). From these results, high voltage application of MLCCs can be expanded and the rated voltage can also be develop.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.19.1-19.1
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• 2011

Effects of particle size, crystal structures and multilayer structures of $ATiO_3$, $ATa_2O_6$, $ANb_2O_6$, $AWO_4$, and $AMoO_4$ (A=Ni, Mg, Zn, Co) ceramic fillers on the dielectric properties of polystyrene (PS), polypropylene (PP) and polytetrafluoroethylene (PTFE) polymer matrices were investigated at microwave frequencies. The microwave dielectric properties of $ATiO_3$ (ilmenite), $ATa_2O_6$ (tri-rutile), $ANb_2O_6$ (columbite), AWO4 (wolframite), and AMoO4 (wolframite) ceramics were largely dependent on the structural characteristics of oxygen octahedra. The dielectric constant (K) of the composites was increased with the ceramic content. However, the dielectric loss (tan ${\delta}$) of the composites was affected by the type of ceramics and the crystallinity of polymers. For the composites with same amount of ceramics, the K was decreased and the tan ${\delta}$ was increased with the particle size of ceramics. Also, the dielectric properties of the composites were dependent on the multilayer structures with different arrangements. Several theoretical models have been employed to predict the effective dielectric properties of the composites. The frequency dependence of dielectric properties and the temperature coefficient of resonant frequency (TCF) of the composites were also discussed.

• 한국세라믹학회지
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• 제47권2호
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• pp.163-168
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• 2010

Effects of compositions on the microwave dielectric properties of the MgO-$TiO_2$ system were investigated as a function of the molar ratio of MgO to $TiO_2$ ($0.9{\leq}MgO/TiO_2\;(x){\leq}1.2$). With the compositional changes, secondary phases of $MgTi_2O_5$ and $Mg_2TiO_4$ were also detected along with $MgTiO_3$. Microwave dielectric properties of the specimens were dependent on the types of phases developed in the sintered specimens. A single phase of $MgTiO_3$ showed a dielectric constant (K) of 18.2, a quality factor (Qf) of 198,000 GHz, and a temperature coefficient of resonant frequency (TCF) of $-51\;ppm/^{\circ}C$. However, the dielectric properties of the specimens with a secondary phase of $MgTi_2O_5$ (K=19.9, Qf=48,000 GHz) and/or $Mg_2TiO_4$ (K=15.6, Qf=56,000 GHz) were worsened. Dependence of the microwave dielectric properties on the secondary phase of the MgO-$TiO_2$ system was also discussed in terms of dielectric mixing rules.

• 대한전자공학회논문지
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• 제27권10호
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• pp.10-15
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• 1990

Dielectric rod resonator 방법을 이용하여 고주파 대역에서 낮은 유전 손실을 갖는 유전체의 유전 특성을 측정하는 이론과 실험결과를 보였다. 유전체 시편과 금속 도체판 사이에 존재하는 공기층 효과를 최소화하기 위해 $TE_{011}$ mode 공진 주파수를 이용하였다. 컴퓨터를 사용하여 공진 주파수와 시편 크기, 2-dB 대여폭으로부터 유전 특징을 계산하였다. 측정의 오차 범위는 유전 상수인 경우 ${\pm}3{\%}$ 유전 손실인 경우 ${\pm}12{\%}$ 이내였다.

• 한국재료학회지
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• 제19권11호
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• pp.576-580
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• 2009

$BaTiO_3$/epoxy composites have been widely investigated as promising materials for embedded capacitors in printed circuit boards. It is generally known that the dielectric constant (K) of the $BaTiO_3$/epoxy composites increases with improvement of the dispersion of $BaTiO_3$ particles in the epoxy matrix that comes from adding surfactant. The influences of surfactant addition on the dielectric properties of the $BaTiO_3$/epoxy composites are reported in the present study. The dielectric constant of the $BaTiO_3$/epoxy composites is not significantly affected by the surfactant addition. However, the temperature coefficient of capacitance increases and the peel strength decreases as the amount of added surfactant increases. The influences of surfactant addition on the dielectric properties of the neat epoxy are also very similar to those of the $BaTiO_3$/epoxy composites. The residual surfactant in the $BaTiO_3$/epoxy composites affects the temperature coefficient of capacitance and the peel strength of the epoxy matrix, which in turn affects the temperature coefficient of capacitance and the peel strength of the $BaTiO_3$/epoxy composites.

• 한국군사과학기술학회지
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• 제10권3호
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• pp.114-119
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• 2007

Dielectric properties of quartz glass and $Si_3N_4$ are investigated using the waveguide method from room temperature to $800^{\circ}C$. For the case of dielectric constant, $Si_3N_4$ showed similar increase with quartz glass up to $300^{\circ}C$, but less increase from $300^{\circ}C$ to $800^{\circ}C$. For the case of loss tangent, those showed gradual increase with temperature except of some temperature points. The loss tangent of $Si_3N_4$ and quartz glass increased up to 18.2% and 12.5% respectively. Through these researches, high temperature dielectric properties of silicon nitride materials are characterized.