• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.311-311
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• 2013

The resistance switching memory devices have several advantages to take breakthrough for the limitation of operation speed, retention, and device scale. Especially, the metal-oxide materials such as ZnO are able to fabricate on the flexible and visible transparent plastic substrate. Also, the quantum dots (QDs) embedded in dielectric layer could be improve the ratio between the low and the high resistance becauseof their Coulomb blockade, carrier trap and induced filament path formation. In this study, we irradiated 0.2-MeV-electron beam on the ZnO/QDs/ZnO structure to control the defect and oxygen vacancy of ZnO layer. The metal-oxide QDs embedded in ZnO layer on Pt/glass substrate were fabricated for a memory device and evaluated electrical properties after 0.2-MeV-electron beam irradiations. To formation bottom electrode, the Pt layer (200 nm) was deposited on the glass substrate by direct current sputter. The ZnO layer (100 nm) was deposited by ultra-high vacuum radio frequency sputter at base pressure $1{\times}10^{-10}$ Torr. And then, the metal-oxide QDs on the ZnO layer were created by thermal annealing. Finally, the ZnO layer (100 nm) also was deposited by ultra-high vacuum sputter. Before the formation top electrode, 0.2 MeV liner accelerated electron beams with flux of $1{\times}10^{13}$ and $10^{14}$ electrons/$cm^2$ were irradiated. We will discuss the electrical properties and the physical relationships among the irradiation condition, the dislocation density and mechanism of resistive switching in the hybrid memory device.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.33 no.11
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• pp.24-32
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• 2005

The object of this study is to design radar absorbing structures(RAS) with load-bearing ability in X-band. Glass/Epoxy plain-weave composites of excellent specific stiffness and strength, containing multi-walled carbon nanotubes(MWNT) added to induce dielectric loss were fabricated. The observation of microstructure and the permittivity of the composites confirmed that the materials are suitable to be used for radar absorbing material. Genetic algorithm and theory for reflection/transmission of electromagnetic waves in a multi-layered RAS were applied to conduct an optimal design of a RAS composed of the developed composites. We observed that the thickness per ply changes with the number of ply and MWNT contents. The fabrication process was proposed considering the problem and applied to fabricate a designed RAS and the theoretical and measured reflection loss of the RAS were also found in good agreement.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.2
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• pp.75-80
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• 2006

In this paper, to detect and observation the void discharges pulse signal, AE signals and tree growth characteristics in case the high voltage is applied to a XLPE sample for a power cable. We also examined the partial discharge current pulse and AE signals with the increase of the applied voltage in XLPE insulation. The experimental results show that a branch-type tree grows in the presence of the voids, and a bush-type tree grows in the absence of the voids in both samples. A rate of tree growth increases abruptly in proportional to the deterioration time in the presence of the of the voids, but in the absence of the voids, a rate of tree growth decreases as time goes by and finally a breakdown occurs. The frequency band of AE signals that are generated from the partial discharges in a XLPE sample, one of solid dielectric materials, is about 1.0[MHz].

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.7
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• pp.1491-1496
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• 2005

We fabricated the $Pb_{0.72}La_{0.28}TiO_3$ (PLT(28)) thin film successfully by using the sol-gel method and characterized it to evaluate its potential for being utilized as the capacitor dielectrics of ULSI DRAMs. In our sol-gel process, the acetates were used as the starting materials. Through the TGA-DTA analysis, we established the excellent fabrication conditions of the sol-gel method for the PLT(28) thin film. We obtained the dense and crack-free PLT(28) thin film of $100\%$ perovskite phase by drying at $350^{\circ}C$ after each coating and final annealing at $650^{\circ}C$. Electrical properties of PLT(28) thin film were measured through formation on the $Pt/Ti/SiO_2/Si$ substrate and its dielectric constant and leakage current density were measured as 936 and $1.1{\mu}A/cm^2$, respectively.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.92-97
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• 2016

This paper presents design and simulation of wide band RF microswitch that uses electrostatic actuation for its operation. RF MEMS devices exhibit superior high frequency performance in comparison to conventional devices. Similar techniques that are used in Very Large Scale Integration (VLSI) can be employed to design and fabricate MEMS devices and traditional batch-processing methods can be used for its manufacturing. The proposed switch presents a novel design approach to handle reliability concerns in MEMS switches like dielectric charging effect, micro welding and stiction. The shape has been optimized at actuation voltage of 14-16 V. The switch has an improved restoring force of 20.8 μN. The design of the proposed switch is very elemental and primarily composed of electrostatic actuator, a bridge membrane and coplanar waveguide which are suspended over the substrate. The simple design of the switch makes it easy for fabrication. Typical insertion and isolation of the switch at 1 GHz is -0.03 dB and -71 dB and at 85 GHz it is -0.24 dB and -29.8 dB respectively. The isolation remains more than - 20 db even after 120 GHz. To our knowledge this is the first demonstration of a metal contact switch that shows such a high and sustained isolation and performance at W-band frequencies with an excellent figure-of merit (fc=1/2.pi.Ron.Cu =1,900 GHz). This figure of merit is significantly greater than electronic switching devices. The switch would find extensive application in wideband operations and areas where reliability is a major concern.

• Polymer(Korea)
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• v.31 no.6
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• pp.526-531
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• 2007

This paper reports the first results of a series of planarization film study for the stainless steel (SS) substrates for flexible displays. Diglycidyl ether of bisphenol A (DGEBA) and octa(dimethylsiloxypropylglycidylether) silsesquioxane (OG) were chosen for the organic and the hybrid epoxies respectively and diaminodiphenylmethane (DDM) was used as a curing agent at 1:2 stoichiometric ratio. These materials were spin-coated on SS substrates and thermal-cured. TGA study indicated that both the pristine and the cured OG were more thermally stable than DGEBA. AFM study showed that the smooth surfaces of $1{\sim}2\;nm$ roughness can be prepared for both DGEBA and OG when the films were thick ($>\;1\;{\mu}$). The electrical properties such as dielectric constant, capacitance and the leakage current with respect to the applied voltage were all stable even after the stress of $100\;V/100^{\circ}C$ was applied for $0{\sim}10000$ seconds indicating that the insulating properties of DGEBA and OG films were very reliable.

• Journal of the Korean Vacuum Society
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• v.4 no.2
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• pp.217-223
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• 1995

절연보호막에 따른 AI-1%Si 박막배선의 평균수명(MTF, Mean-Time-to-Failure) 및 electromigration에 대한 저항성, 즉 활성화에너지(Q)변화 등을 측정 비교하였다. 박막배선은 $5000\AA$두께로 열산화막 처리된 p-Si(100)기판위에 $7000\AA$의 AI-1%Si을 증착한 후 photolithography 공정으로 형성시켰다. Electromigration test를 위한 박막배선은 $3\mu$m의 폭과 $400\mu$m, $1600\mu$m의 두 가지 길이를 가지며 절연보호막 효과를 알아보기 위해 그 위에 $3000\AA$의 두께로 SiO2, PSG, Si3N4등 절연보호막을 APCVD 및 PECVD를 이용하여 각각 증착시켰다. 가속화 실험을 위해 인가된 전류밀도는 4.5X106A/cm2이었고 180, 210, $240^{\circ}C$온도에서 d.c. 인가 후의 저항변화를 측정하여 평균수명을 구한 후 Black 방정식을 이용하여 활성화에너지를 측정하였다. AI-1%Si 박막배선에서 electromigration에 대한 활성화에너지값은 $400\mu$m길이의 경우 0.44eV(nonpassivated), 0.45eV(Si3N4 passivated), 0.50 eV(PSG passivated), 그리고 0.66 eV(SiO2 passivated)로 각각 측정되었다. $1600\mu$m 길이의 AI-1%Si 박막배선 실험에서도 같은 절연보호막 효과가 관찰되었다. 따라서 SiO2, PSG, Si3N4등 절연보호막은 AI-1%Si 박막배선에서의 electromigration에 대한 저항력을 높여 결함방지효과를 보이며 수명을 향상시킨다. SiO2의 절연보호막의 경우가 AI-1%Si 박막배선의 electromigration에 대한 가장 강한 저항력을 보이며 평균수명도 높게 나타났다.

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1429-1436
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• 1994

We have prepared Ba0.5Sr0.5TiO3 thin films on Si substrate without buffer layer. Deposition was carried out by off-axis rf magnetron sputtering method using Ba0.5Sr0.5TiO3 stoichiometric target. The substrate temperature was changed from 40$0^{\circ}C$ to $700^{\circ}C$ during deposition. As the substrate temperature increased, relative intensity of (110) peak increased up to $600^{\circ}C$, however preferred orientation changed from (110) to (h00) beyond $650^{\circ}C$ of substrate temperature. Deposited films showed microstructures with fine grains whose diameters are less than 100 nm, and columnar structure was observed in the cross-sectional SEM micrograph. AES depth profile showed no significant diffusion at the interfacial reaction area. The effective dielectric constant of films showed maximum value at $600^{\circ}C$, and the leakage current increased with increasing substrate temperature, which may be ascribed to the crystallization of amorphous phases at grain boundary.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.6
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• pp.410-415
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• 1999

$Ba_{1-x}Sr_xTiO_3$ thin films with various ratio of Sr (X = 0.4, 0.5, 0.6) were grown $Pt/TiN/SiO_2/Si$ subastrate by RF magnetron sputtering deposition. As, Ag, and Cu films were deposited on $Ba_{1-x}Sr_xTiO_3$ thin films as top electrodes by using a thermal evaporator. The electrical properties of $Ba_{1-x}Sr_xTiO_3$ thin films for various compositions were characterized and the physical properties at interface between $Ba_{1-x}Sr_xTiO_3$ thin films and top electrodes were evaluated in terms of the work function difference. At x =0.5, the degradation of capacitance is lower to the other compositions. As negative biasapplied, the specimen with Cu top electrode has board saturation region and low leakage current since work function of Cu is bigger than other electrodes.$ Ba_{0.5}Sr_{0.5}TiO_3$ thin films with Cu top electrode, the dielectric constant was measured to the value of 354 at 1 kHz and the leakage current was obtained to the value of $5.26\times10^{-6}A/cm2$ at the forward bias of 2 V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.93-98
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• 2001

YMnO$_3$ films are excellent gate dielectric materials of ferroelectric random access memories (FRAMs) with MFSFET (metal -ferroelectric-semiconductor field effect transistor) structure because YMnO$_3$ films can be deposited directly on Si substrate and have a relatively low permittivity. Although the patterning of YMnO$_3$ thin films is the requisite for the fabrication of FRAMs, the etch mechanism of YMnO$_3$ thin films has not been reported. In this study, YMnO$_3$thin films were etched with Cl$_2$/Ar gas chemistries in inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$ film is 285$\AA$/min under Cl$_2$/(Cl$_2$+Ar) of 1.0, RF power of 600 W, dc-bias voltage of -200V, chamber pressure of 15 mTorr and substrate temperature of $25^{\circ}C$. The selectivities of YMnO$_3$ over CeO$_2$ and $Y_2$O$_3$ are 2.85, 1.72, respectively. The selectivities of YMnO$_3$ over PR and Pt are quite low. Chemical reaction in surface of the etched YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS) surface of the selected YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry (SIMS). The etch profile was also investigated by scaning electron microscopy(SEM)