• Journal of Ceramic Processing Research
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• 제13권spc2호
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• pp.174-176
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• 2012

Piezoelectric 0.93(Na0.5K0.5)NbO3-0.07BiTiO3 (NKN-BTO) ceramics were fabricated by the mixed-oxide method and their structural and dielectric properties was investigated with the variation of sintering temperature. All specimens were crystallized in the perovskite single phase without any formation of a second phase such as pyrochlore. The average grain size of the NKN-BTO specimen sintered at 1130 ℃ is 0.32 ㎛. The specimen sintered at 1100 ℃ showed the highest relative density of 98%. Electromechanical coupling factor, relative dielectric constant and dielectric loss of the NKN-BTO specimens sintered at 1110 ℃ were 0.31, 1222 and 0.02, respectively. Curie temperature of the specimen sintered at 1110 ℃ was 445 ℃.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.256-259
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• 1996

$(Sr_{1-x}{\cdot}Ca_x)TiO_3+yNb_2O_5$($0.05{\leq}x{\leq}0.2$, 0.004$1350[^{\circ}C]$ in a reducing atmosphere($N_2$ gas). Dielectric propertries were investigated with contents of $Nb_2O_5$. The grain size and dielectric constant increase with increase $Nb_2O_5$, but decrease in $Nb_2O_5$ exceed($Nb_2O_5=0.6[mol%]$). Also, the temperature characteristics of the dielectric loss factor exhibited a stable value within 0.5[%]. The capacitance characteristics appeals a stab]e value in ${\pm}10[%]$.

• Journal of Welding and Joining
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• 제33권5호
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• pp.41-46
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• 2015

The snap cure NCP(non-conducive paste) adhesive material is essentially required for the high productivity flip chip bonding process. In this study, the accessibility of DEA(dielectric analysis) method for the evaluation of snap cure behavior was investigated with comparison to the isothermal DSC(differential scanning calorimetry) method. NCP adhesive was mainly formulated with epoxy resin and imidazole curing agent. Even though there were some noise in the dielectric loss factor curve measured by DEA, the cure start and completion points could be specified clearly through the data processing of cumulation and deviation method. Degree of cure by DEA method which was measured from the variation of the dielectric loss factor of adhesive material was corresponded to about 80% of the degree of cure by DSC method which was measured from the heat of curing reaction. Because the adhesive joint cured to the degree of 80% in the view point of chemical reaction reveals the sufficient mechanical strength, DEA method is expected to be used effectively in the estimation of the high speed curing behavior of snap cure type NCP adhesive material for flip chip bonding.

• 대한전자공학회논문지TC
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• 제38권7호
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• pp.14-21
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• 2001

본 논문에서는 유전체가 삽입된 공진기를 이용하여 C-band용 대역통과 여파기를 설계, 제작하였다. 공진기의 높이는 인접 유전체 공진기의 도파관 차단 주파수로부터 결정된다. 공진기의 지름은 도체 손실을 고려하여 유전체의 두 배로 결정하였다. 유전체 공진기의 공진주파수는 비소멸(non-decaying) 모드 해석법으로 계산하였다. 일반적으로 원통형 유전체 공진기의 공진주파수는 Cohn 모델로 해석하였는데, 이것은 공진기의 벽과 유전체벽 사이에서 전자파가 소멸(decaying)된다는 가정 하에 해석한 방법이다. 그러나， 이 방법은 근사적인 해석방법이다. 외부양호도(external quality factor)인 $Q_{ex}$는 Ansoft의 Maxwell 시뮬레이션 툴을 사용하여 결정하였다. 유전율 45인 유전체를 사용하여 설계한 대역통과 여파기는 5.065GHz의 중심주파수를 가졌다. 삽입손실은 1dB, 밴드 폭은 20MHz, 감쇠 특성은 30dB$(f_0{\pm}15MHz)$)로 설계목표에 만족함을 알 수 있다.

• E2M - 전기 전자와 첨단 소재
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• 제10권7호
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• pp.659-667
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• 1997

The influence of SiO$_2$on the microstructure and electrical properties of zinc oxide varistor was investigated. Zn$_2$SiO$_4$third phase in the sintered body was found at grain boundaries, multiple grain junctions, and occasionally within ZnO grains. This phase acted as a grain growth inhibitor, which retard the grain growth of the ZnO matrix by impeding migration on the grain boundaries. As SiO$_2$ addition increases, average grain size decreased from 40.6${\mu}{\textrm}{m}$ to 26.9${\mu}{\textrm}{m}$ due to the pinning effect by Zn$_2$SiO$_4$ and drag effect by Si segregation at grain boundaries, the breakdown voltage consequently increased. When SiO$_2$ addition is increased, interface state density decreased, however, the barrier height increased by decrease of donor concentration, as a result, the nonlinear exponent increased and leakage current decreased. While, as SiO$_2$ addition increase, it was found that the apparent dielectric loss factor shows a tendency of decrease. Wholly, electrical properties of zinc oxide varistor can be said to be improved by SiO$_2$addition.

• 마이크로전자및패키징학회지
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• 제10권1호
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• pp.51-56
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• 2003

GPS 안테나 제작을 위하여 $MgTiO_3-CaTiO_3$계 세라믹 유전체의 고주파 유전 특성을 연구하였다. (1-X) $MgTiO_3-X CaTiO_3$계 세라믹에서 X=7mol%이고 소성 온도 $1400^{\circ}C$일 때 유전율 20.6, 품질계수 52,500, 공진주파수 온도계수 -1.5[ppm/$^{\circ}C$]의 유전 특성을 얻었다. X=0.7 mol% 조성에 $P_2O_5$를 0.6wt% 첨가한 결과 소성온도 $1250^{\circ}C$에서 유전율 21, 품질계수 58,000, 공진주파수 온도 계수 2.6 [ppm/$^{\circ}C$]의 고주파 유전 특성을 얻었다. 상기 조성을 이용하여 세라믹 두께 6[mm], 정사각형의 패치 길이 20.5[mm]인 GPS 안테나를 설계 제작하였다. GPS 안테나 제작 결과 중심주파수 1579(MHz), 반사손실-11(dB), 대역폭 22 [MHz]로 설계 결과와 유사함을 볼 수 있었다.

• 한국전기전자재료학회논문지
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• 제14권6호
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• pp.455-459
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• 2001

In this paper, the dielectric and pizoelectric properties of 0.05Pb(M $n_{04}$ $W_{0.2}$N $b_{0.4}$) $O_3$-0.95(PbZ $r_{x}$ $Ti_{1-x}$ ) $O_3$+yN $b_2$ $O_{5}$ , are investigated as a function of the mole ratio of Zr and the amount of N $b_2$ $O_{5}$ . Also, the phase is analyzed by XRD. When the mole ratio of Zr is 0.51, the electromechanical coupling coefficient( $k_{p}$ ), relative dielectric constant ($\varepsilon$$^{T}$ $_{33}$ /$\varepsilon$$_{0}$ ), piezoelectric stain constrain ( $d_{33}$ and dielectric loss tangent show maximum, while the mechanical quality factor shows minimum value ; $k_{p}$ =56.5%, $d_{33}$ =258pC/N, $\varepsilon$$^{T}$ $_{33}$ /$\varepsilon$$_{0}$ =1170, $Q_{m}$ =1150, tan$\delta$=0.51%. At that composition, MPB which rhombohedral and tetragonal phase coexist in this ternary system is shown by the results of XRD analysis. Also, when the amount of N $b_2$ $O_{5}$ is 0.3wt%, the mechanical quality factor is increased to about 2000. The phase transition temperature of the ternary piezoelectric ceramic system showed about 35$0^{\circ}C$.TEX>.>.>.

• 한국전기전자재료학회논문지
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• 제17권11호
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• pp.1174-1177
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• 2004

The dielectric and piezoelectric properties of silver added 0.96 Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_3$-0.04 Pb(Mn,W,Sb,Nb)$_3$ ceramics were examined. By varying the contents of silver(0.0, 0.4, 1.0 mol%), the effect of silver addition on PZT-PMWSN ceramics was investigated at various sintering temperature(900, 1000, 1100 $^{\circ}C$). As increasing silver contents, the relative dielectric constant was increased and sinterability was enhanced. At the specimen with 0.4 mol% Ag and sintered at 1000 $^{\circ}C$, electromechanical coupling factor( $k_{p}$), mechanical quality factor( $Q_{m}$), dielectric constant($\varepsilon$$_{r}$) and dielectric loss were 0.502, 811, 991, 0.006, respectively. The results showed that the PZT-PMWSN/Ag composites have enhanced piezoelectic and dielectric properties and sintering temperature was lowered.red.

• Journal of Advanced Marine Engineering and Technology
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• 제30권8호
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• pp.907-918
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• 2006

In this study capacitance and dielectric loss factor were measured with low-voltage signal and the simulation of equivalent circuits for the data was conducted. As the result it was shown that the equivalent circuit model considered the grain-boundary structure with semiconducting layer, dielectric layer and depletion layer was well approximated with the observed data. Various parameters were determined by a optimum curve-fitting method and could be used to analyze the characteristics of varistor. It also seems that the proposed equivalent circuit model will be adopted for other BL type varistors.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1471-1473
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• 2000

In this study capacitance and dielectric loss factor were measured with low-voltage signal and the simulation of equivalent circuits for the data were conducted. As the result it was showed that the equivalent circuit model considered the gram-boundary structure with semiconducting layer, dielectric layer and depletion layer was well approximated with the observed data. Various parameters were determined by a optimum curve-fitting method and could be used to analyze the varistor-voltages and the nonlinear coefficient of varistors. It also seems that the proposed equivalent circuit model will be adopted for other BL type varistors.