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Electric equivalent circuit of $SrTiO_3$-based varistor  

Kang, Dae-Ha (부경대학교 전기제어공학부)
Roh, Il-Soo (부경대학교 대학원)
Publication Information
Journal of Advanced Marine Engineering and Technology / v.30, no.8, 2006 , pp. 907-918 More about this Journal
Abstract
In this study capacitance and dielectric loss factor were measured with low-voltage signal and the simulation of equivalent circuits for the data was conducted. As the result it was shown that the equivalent circuit model considered the grain-boundary structure with semiconducting layer, dielectric layer and depletion layer was well approximated with the observed data. Various parameters were determined by a optimum curve-fitting method and could be used to analyze the characteristics of varistor. It also seems that the proposed equivalent circuit model will be adopted for other BL type varistors.
Keywords
Grain boundary; Semiconducting layer; Dielectric layer; Depletion layer; Curve-fitting method;
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