• Title/Summary/Keyword: Dielectric functions

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Time Domain Combined Field Integral Equation for Transient Electromagnetic Scattering from Dielectric Body (유전체의 전자기 과도산란 해석을 위한 시간영역 결합 적분방정식)

  • Kim Chung-Soo;An Hyun-Su;Park Jae-Kwon;Jung Baek-Ho
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.12
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    • pp.626-633
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    • 2004
  • In this paper, we present a time domain combined field integral equation (TD-CFIE) formulation to analyze the transient electromagnetic response from three-dimensional dielectric objects. The solution method in this paper is based on the method of moments (MoM) that involves separate spatial and temporal testing procedures. A set of the RWG (Rao, Wilton, Glisson) functions Is used for spatial expansion of the equivalent electric and magnetic current densities and a combination of RWG and its orthogonal component is used as spatial testing. We also investigate spatial testing procedures for the TD-CFIE to select the proper testing functions that are derived from the Laguerre polynomials. These basis functions are also used for temporal testing. Use of this temporal expansion function characterizing the time variable enables one to handle the time derivative terms in the integral equation and decouples the space-time continuum in an analytic fashion. Numerical results computed by the proposed formulation are presented and compared with the solutions of the frequency domain combined field integral equation (FD-CFIE).

Fast Convergent Solution of TM Scattering by Conducting Strip Grating on Two Dielectric Layers (2개 유전체층 위의 완전도체띠 격자구조에 의한 TM 산란의 급속한 수렴 해)

  • Yoon, Ueil-Joong
    • Journal of Advanced Navigation Technology
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    • v.18 no.1
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    • pp.78-83
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    • 2014
  • In this paper, the solutions of TM (transverse magnetic) scattering problems by perfectly conducting strip grating on two dielectric layers are analyzed by applying the FGMM (Fourier Galerkin moment method) as a numerical method. For the TM scattering problem, the induced surface current density is expected to the very high value at both edges of the strip, then the induced surface current density on the strip is expanded in a series of the multiplication of the functions of appropriate edge boundary condition and the Chebyshev polynomials of the first kind. The numerical results are obtained for the magnitude of induced current density, the normalized reflected power and transmitted power. The numerical results using proposed functions were improved the convergence faster than existing exponential functions, and the numerical results shown the good agreement compared to those of the existing papers.

TD-CFIE Formulation for Transient Electromagnetic Scattering from 3-D Dielectric Objects

  • Lee, Young-Hwan;Jung, Baek-Ho;Sarkar, Tapan K.;Yuan, Mengtao;Ji, Zhong;Park, Seong-Ook
    • ETRI Journal
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    • v.29 no.1
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    • pp.8-17
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    • 2007
  • In this paper, we present a time domain combined field integral equation formulation (TD-CFIE) to analyze the transient electromagnetic response from dielectric objects. The solution method is based on the method of moments which involves separate spatial and temporal testing procedures. A set of the RWG functions is used for spatial expansion of the equivalent electric and magnetic current densities, and a combination of RWG and its orthogonal component is used for spatial testing. The time domain unknowns are approximated by a set of orthonormal basis functions derived from the Laguerre polynomials. These basis functions are also used for temporal testing. Use of this temporal expansion function characterizing the time variable makes it possible to handle the time derivative terms in the integral equation and decouples the space-time continuum in an analytic fashion. Numerical results computed by the proposed formulation are compared with the solutions of the frequency domain combined field integral equation.

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Effect of Silica Content on the Dielectric Properties of Epoxy/Crystalline Silica Composites

  • Park, Jae-Jun
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.6
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    • pp.322-325
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    • 2012
  • Crystalline silica was synthesized by annealing amorphous silica at $1,300^{\circ}C$ or $1,400^{\circ}C$ for various times, and the crystallinity was estimated by X-ray diffraction (XRD) analysis. In order to prepare a low dielectric material, epoxy/crystalline silica composites were prepared, and the effect of silica content on the dielectric properties was studied under various functions of frequency and ambient temperature. The dielectric constant decreased with increasing crystalline silica content in the epoxy composites, and it also decreased with increasing frequency. At 120 Hz, the value of 5 wt% silica decreased by 0.25 compared to that of 40 wt% silica, and at 23 kHz, the value of 5 wt% silica decreased by 0.23 compared to that of 40 wt% silica. The value increased with increasing ambient temperature.

E-polarized diffraction coefficients extended inside dielectric region of a composite wedge (복합쐐기의 유전체 영역에서 확장된 E-편파 회절계수)

  • 김세윤
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.7
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    • pp.8-14
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    • 1997
  • The phusical optics approximation to an E-polarized diffraction by a composite wedge provides its diffraction coefficients in terms of finite series of cotangent functions. In this paper, its diffraction coefficients inside the dielectric part are extended to become the exact solution to the perfectly conducting wedge as its relative dielectric constant increases to infinite or decreases to 1. It is assured that the extended diffraction coefficients satisfy the boundary condition at th econducting interface and become zero in the artificially complementary region of the composite wedge.

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Műller Formulation for Analysis of Scattering from 3-D Dielectric Objects with Triangular Patching Model

  • Lee, Chang-Hyun;Cho, Jin-Sang;Jung, Baek-Ho;Sarkar Tapan K.
    • Journal of Electrical Engineering and Technology
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    • v.2 no.1
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    • pp.129-135
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    • 2007
  • In this paper, we present a set of numerical schemes to solve the Muller integral equation for the analysis of electromagnetic scattering from arbitrarily shaped three-dimensional (3-D) dielectric bodies by applying the method of moments (MoM). The piecewise homogeneous dielectric structure is approximated by planar triangular patches. A set of the RWG (Rao, Wilton, Glisson) functions is used for expansion of the equivalent electric and magnetic current densities and a combination of the RWG function and its orthogonal component is used for testing. The objective of this paper is to illustrate that only some testing procedures for the Muller integral equation yield a valid solution even at a frequency corresponding to an internal resonance of the structure. Numerical results for a dielectric sphere are presented and compared with solutions obtained using other formulations.

Defects and Grain Boundary Properties of Cr-doped ZnO (Cr을 첨가한 ZnO의 결함과 입계 특성)

  • Hong, Youn-Woo;Shin, Hyo-Soon;Yeo, Dong-Hun;Kim, Jong-Hee;Kim, Jin-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.11
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    • pp.949-955
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    • 2009
  • In this study, we investigated the effects of Cr dopant (1.0 at% $Cr_2O_3$ sintered at $1000^{\circ}C$ for 1 h in air) on the bulk trap (i.e. defect) and interface state levels of ZnO using dielectric functions ($Z^*$, $M^*$, $Y^*$, $\varepsilon^*$, and $tan{\delta}$), admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). For the identification of the bulk trap levels, we examine the zero-biased admittance spectroscopy and dielectric functions as a function of frequency and temperature. Impedance and electric modulus spectroscopy is a powerful technique to characterize grain boundaries of electronic ceramic materials as well. As a result, three kinds of bulk defect trap levels were found below the conduction band edge of ZnO in 1.0 at% Cr-doped ZnO (Cr-ZnO) as 0.11 eV, 0.21 eV, and 0.31 eV. The overlapped defect levels ($Zn^{..}_i$ and $V^{\cdot}_0$) in admittance spectra were successfully separated by the combination of dielectric function such as $M^*$, $\varepsilon^*$, and $tan{\delta}$. In Cr-ZnO, the interfacial state level was about 1.17 eV by IS and MS. Also we measured the resistance ($R_{gb}$) and capacitance ($C_{gb}$) of grain boundaries with temperature using impedance-modulus spectroscopy. It have discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z"-logf plots with temperature.

EM WAVE PENETRATION INTO A CYLINDRICAL CAVITY WITH A CENTER DIELECTRIC-ROD (중심의 유전체 막대가 있는 원통형공동의 전자파흡수)

  • Cho, Chul;Rhee, Un-Dong
    • 전기의세계
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    • v.28 no.2
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    • pp.68-75
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    • 1979
  • The penetration of an electro-magnetic wave through an aperture in a cylindrical structure with a center dielectric-rod is investgated. By using a standard mode matching procedure, the electrical and magnetic fields in a cavity are determined as a function of position inside the cavity and frequency of the incident field. For the given parameters, computed data are obtained and the results exhibited in form of amplitude curves of the nor malized field and energy densities of functions of position and frequency. Depending on the increase of the relative dielectric constant of center dielectric-rod, the resonance frequecies of the cavity vary as the cavity size decrease. The stored electro-magnetic energy varies very rapidly as a function of position inside the cavity and of the source frequency. Its peak value can be two orders of magnitude greater than the incident energy density. The frequencies where the peaks occur can be identified approximately as the resonance frequencies of the cavity.

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Parametric modeling for the dielectric function of $Cd_{0.77}Mg_{0.23}Te$ alloy film

  • Ihn, Yong-Sub;Kim, Tae-Jung;Kim, Young-Dong
    • Journal of Korean Vacuum Science & Technology
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    • v.6 no.4
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    • pp.149-152
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    • 2002
  • We performed the modeling of the dielectric functions of C $d_{0.77}$M $g_{0.23}$Te by using parametric semiconductor model. Parametric model describes the analytic dielectric function as the summation of several energy-bounded Gaussian-broadened polynomials and provides a reasonably well parameterized function which can accurately reproduce the optical constants of semiconductor materials. We obtained the values of fitting parameters of the Mg composition 0.23 in the parametric model. From these parameters we could remove interference oscillations to obtain the dielectric function of C $d_{0.77}$M $g_{0.23}$Te alloy film for full 0.5-6.0 eV energy range.y range.

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Electromagnetic Scattering of Inhomogeneous Dielectric Body using Tetrahedral Modeling Method (체적요소기법을 이용한 비균질 유전체의 산란특성)

  • Bae, Geon-Sik;Kim, Che-Young
    • Proceedings of the KIEE Conference
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    • 1996.07c
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    • pp.1747-1749
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    • 1996
  • A method for calculating the electromagnetic scattering from arid internal field distribution of arbitrally, shaped, inhomogeneous dielectric bodies is presented. Tetrahedral volume elements are used to model a scattering body in which the electrical parameters are defined constant in each tetrahedron. Special basis functions are defined within the tetrahedral volume elements to satisfy the boundary condition at interfaces between different dielectric media. In order to test the accuracy of the solution by using the present method, it is applied to obtain the scattered field by the dielectric sphere. The accuracy of the fields calculated by using the tetrahedral cell method is found to be comparable to that of others.

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