• 한국전기전자재료학회논문지
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• 제19권6호
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• pp.586-590
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• 2006

This paper deals with the application of a partial discharge (PD) test on low-voltage electrical and electronic devices, which is recently being accepted as a non-destructive and a effective dielectric test method. A comparative analysis combined with the Withstand Voltage Test (WVT) specified in IEC standards was carried out on low-voltage insulation transformers. The results showed that the WVT causes insulation degradation of the specimen during the test by applying high voltage. However, the PD test can be performed in ranges from 30 % to 50 % of the test voltage specified in the WVT. Therefore, the PD test is successfully applicable for a non-destructive test method on low-voltage electrical and electronic devices as a replacement of the WVT.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.381-381
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• 2010

$(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility inachieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFET channel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gapswere obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of $ZrO_2$. In addition, The dielectric function (k, $\omega$), index of refraction n and the extinction coefficient k for the $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-$\varepsilon$(k, $\omega$)-REELS software package. These optical properties are similar with $ZrO_2$ dielectric thin films.

• Journal of Electrical Engineering and Technology
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• 제12권2호
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• pp.840-845
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• 2017

In this paper, in order to investigate the lifetime of oil-paper insulation, specimens were artificially aged with thermal and electrical multiple stresses. Accelerated ageing factors and equivalent operating years for each aging temperatures were derived from results of tensile strengths for the aged paper specimens. Also, the evaluation for the multi-stress aged specimens were carried out through the measurement of impulse breakdown voltage at high temperature of $85^{\circ}C$. The lifetimes of the oil-paper insulations were calculated with the value of 66.7 for 1.0 mm thickness specimens and 69.7 for 1.25 mm thickness specimens throughout the analysis of impulse BD voltages using equivalent operating years, which means that dielectric strengths would not be severely decreased until the mechanical lifetime limit. Therefore, for the lifetime evaluation of the oil-paper insulation, thermal aging would be considered as a dominant factor whereas electrical degradation would be less effective.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1502-1504
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• 1996

The effects of electrical stress in hydrogen passivated and as-fabricated poly-Si TFT's are investigated. It is observed that the charge trapping in the gate dielectric is the dominant degradation mechanism in poly-Si TFT's which has been stressed by the gate bias alone while the creation of defects in the poly-Si film is prevalent in gate and drain bias stressed devices. The degradation due to the gate bias stress is dramatically reduced with hydrogenation time while the degradation due to the gate and drain bias stress is increased a little. From the experimental results, it is considered that hydrogenation suppress the charge trapping at gate dielectrics as well as improve the characteristics of poly-Si TFT's.

• 한국조명전기설비학회지:조명전기설비
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• 제8권1호
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• pp.57-62
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• 1994

영상처리 방식을 이용하여 유기 절연재료의 트리잉 열화를 측정하였다. 전통적으로 목측(가시측정)에 의한 트리현상 변화를 관찰해 왔으나 트리형상 특징과 변화를 이해하는데 정확한 측정에 어려움을 만들었다. 영상처리 시스템을 이용한 트리 측정장치를 이용하여 트리진전길이와 열화면적들의 고유특성을 영상처리 시스템을 이용하여 목측치와 거의 대등한 결과가 나오는 트리진전 영상처리 자동계측 시스템을 구현하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권5호
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• pp.367-372
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• 1999

We have investigated the effects of electrical stress on poly-Si TFTs with different hydrogen passivation conditions. The amounts of threshod voltage shift of hydrogen passivated poly-Si TFTs are much larger than those of as-fabricated devices both under the gate only and the gate and drain bias stressing. Also, we have quantitatively analyzed the degradation phenomena by analytical method. We have suggested that the electron trapping in the gate dielectric is the dominant degradation mechanism in only gate bias stressed poly-Si TFT while the creation of defects in the channel region and $poly-Si/SiO_2$ interface is prevalent in gate and drain bias stressed device.

• ETRI Journal
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• 제33권6호
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• pp.887-896
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• 2011

We investigated the effects of a gate dielectric and its solvent on the characteristics of top-gated organic field-effect transistors (OFETs). Despite the rough top surface of the inkjet-printed active features, the charge transport in an OFET is still favorable, with no significant degradation in performance. Moreover, the characteristics of the OFETs showed a strong dependency on the gate dielectrics used and its orthogonal solvents. Poly(3-hexylthiophene) OFETs with a poly(methyl methacrylate) dielectric showed typical p-type OFET characteristics. The selection of gate dielectric and solvent is very important to achieve high-performance organic electronic circuits.

• 상하수도학회지
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• 제34권1호
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• pp.75-83
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• 2020

This study investigated the degradation characteristics and biodegradability of phenol, refractory organic matters, by injecting MgO and CaO-known to be catalyst materials for the ozonation process-into a Dielectric Barrier Discharge (DBD) plasma. MgO and CaO were injected at 0, 0.5, 1.0, and 2 g/L, and the pH was not adjusted separately to examine the optimal injection amounts of MgO and CaO. When MgO and CaO were injected, the phenol decomposition rate was increased, and the reaction time was found to decrease by 2.1 to 2.6 times. In addition, during CaO injection, intermediate products combined with Ca²⁺ to cause precipitation, which increased the COD (chemical oxygen demand) removal rate by approximately 2.4 times. The biodegradability of plasma treated water increased with increase in the phenol decomposition rate and increased as the amount of the generated intermediate products increased. The biodegradability was the highest in the plasma reaction with MgO injection as compared to when the DBD plasma pH was adjusted. Thus, it was found that a DBD plasma can degrade non-biodegradable phenols and increase biodegradability.

• 대한환경공학회지
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• 제34권7호
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• pp.459-466
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• 2012

유전체 장벽 방전(Dielectric Barrier Discharge; DBD) 플라즈마의 처리 성능을 개선시키기 위하여, 플라즈마+ UV 공정과 기-액 혼합기의 적용에 대해 연구하였다. 처리 대상물질로는 표백효과에 의해 육안으로 쉽게 확인이 가능하고 분석이 간편한 OH 라디칼 생성의 간접 지표인 N, N-Dimethyl-4-nitrosoaniline (RNO)이었다. 기본 플라즈마 반응기는 플라즈마 반응기 [석영관 유전체, 티타늄 방전(내부) 전극, 및 접지(외부) 전극], 공기와 전원 공급장치로 구성되어 있다. 플라즈마 반응기의 개선은 기본 플라즈마 반응기에 UV 공정과의 결합, 기-액 혼합기의 적용에 의해 이루어 졌다. 플라즈마+ UV 공정의 UV 전력 변화(0~10 W), 기-액 혼합기의 존재 유무와 형태, 공기 유량(1~6 L/min), 산기관 기공 크기 범위(16~$160{\mu}m$), 액체 순환 유량(2.8~9.4 L/min) 및 개선된 플라즈마+ UV 공정에서 UV 전력의 영향 등이 평가되었다. 실험 결과 플라즈마+ UV 공정은 기본 플라즈마 반응기보다 RNO 처리율이 7.36% 높아진 것으로 나타났다. 기-액 혼합기의 적용이 플라즈마+ UV 공정보다 RNO 처리율이 더 높은 것으로 나타났고, 기-액 혼합법에 따른 RNO 분해는 기-액 혼합기 > 펌프 순환 > 기본 반응기의 순으로 나타났다. 산기관 형 기-액 혼합기에 의한 RNO 처리율 증가는 17.42%로 나타났다. 최적 공기 유량, 산기관 기포 크기 범위 및 순환 유량은 각각 4 L/min, 40~$100{\mu}m$와 6.9 L/min으로 나타났다. 기-액 혼합기 플라즈마+ UV공정의 경합으로 인한 시너지 효과는 미미한 것으로 나타났다.

• 한국초전도ㆍ저온공학회논문지
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• 제17권3호
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• pp.33-36
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• 2015

A liquid nitrogen ($LN_2$) is usually used to be a coolant and insulant for a HTS coil system. HTS wires for a superconducting apparatus may be surrounded by gaseous nitrogen ($GN_2$) due to film boiling generated by a quench or voids occurred by electrical breakdown. The increased maximum electric field intensity at $GN_2$ may result in the degradation of dielectric strength of a HTS coil system. In this paper, a study on the dielectric characteristics of a composite insulation system composed of $LN_2$ and $GN_2$ is performed. A sphere-to-plane electrode system made with stainless steel is used to perform the experiments under AC and lightning impulse voltage condition. A sphere electrode is surrounded by $GN_2$ and a plane electrode is immersed into $LN_2$ to conduct dielectric experiments with a composite insulation system. The dielectric experiments are performed according to the level of $LN_2$ from the plane electrode to a sphere electrode. It is found that the dielectric characteristics of a composite insulation system are dependent on the level of $LN_2$ and the field utilization factor of an electrode system.