• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.36D no.6
• /
• pp.44-51
• /
• 1999

The electrical conduction mechanism of high dielectric $(Ba,Sr)TiO_3$ (BST) thin film capacitor, which is the promising cell capacitor for high density DRAM, was investigated in low field region (<0.2MV/cm). It is known that the current in the low field region consists of dielectric relaxation current and leakage current. The current-time (I-t) measurement technique under the constant voltage was used for extracting successfully each current component. The conduction mechanism of the BST capacitor was deduced from the dependency of the current on the measurement temperature, strength of electric field, the polarity of applied electric field and post annealing process. From these results, it was suggested that the dielectric relaxation current and the leakage current are originated from the redistribution of internally trapped electron by hopping process and Pool-Frenkel conduction mechanism, respectively. It was also concluded that traps causing these two current components are due to oxygen vacancies within the BST film.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.38 no.7
• /
• pp.511-523
• /
• 1989

This paper investigates physical properties, the electrical and mechanical characteristics of the epoxy resin with different curing methods and postcuring conditions at room temperature or cryogenic temperature (LN2). According to the results in this paper, first, it is found that the physical properties, electrical and mechanical characteristics of the epoxy resin are largely affected by the interior reaction temperature on the curing. Thus, in the fabrication of the sample, several excellent characteristics of the sample are obtained by controlling the interior reaction temperature of the epoxy resin. Second, the sample having optimal electrical and mechanical characteristics is obtained for the repetitive post-curing method at 100c in view point of the post-curing conditions of the epoxy resin. Third, it appears that tan and characteristics at LN2 temperature are about half of those at room temperature. Fourth, it appears that the dielectric strength of the epoxy resin at LN2 temperature is higher by about 0.6-1.0 MV/cm than that at room temperature. The heat-aging of the epoxy resin due to the micro-defect and excess fever-movement have been noticed to affect dielectric strength at LN2 temperature more significantly than at room temperature.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.15 no.1
• /
• pp.73-80
• /
• 2004

In this paper, the implementation and embedding method of the existing air-filled waveguide-filters at millimeter-wave on general PCB substrate is introduced by systematically inserting the vias inside waveguide and mathematically manipulating the simple equations obtained ken the classical circular-post waveguide filter design. All the metal structures placed vertically such as side wall fur perfect ground plane and circular-post for signal control in the air-filled WR-22 waveguide are replaced with several types of via for constructing the bandpass-filter. Side wall and poles inside waveguide are realized by placing a series array of via and tuning the via diameter. The lengths of x, y, z axis are reduced in proportion to root square of employed substrate dielectric constant and especially the length of z axis can be more reduced due to the characteristics of the wave propagation. Because the mass production on PCB is possible without fabricating a large-scaled metal waveguide of WR-22 as input/output ports at millimeter-wave regime, the manufacturing cost is reduced considerably. Finally, when using multilayer process like LTCC for small-sized module, it is one of advantages to use only one layer f3r the filter fabrication. To evaluate the validity of this novel technique, order-3 Chebyshev BPF(Bandpass-Filter) centered at 40 GHz-band with a 2.5 ％ FBW (Fractional Bandwidth) were used. The employed substrate has relative dielectric constant of 2.2 and thickness of 10 mil of Rogers RT/Duroid 5880. Accroding to design and measurement results, a good performance of insertion loss of 2 ㏈ and return loss of -30 ㏈ is achieved at full input/output ports.

• Bulletin of the Korean Chemical Society
• /
• v.33 no.11
• /
• pp.3544-3550
• /
• 2012

Cetrizine dihydrochloride (CTZH) is widely used as an anti-allergic drug. Sodium N-bromo-p-toluenesulfonamide or bromamine-T (BAT) is the bromine analogue of chloramine-T (CAT) and is found to be a better oxidizing agent than CAT. In the present research, the kinetics of oxidation of CTZH with BAT in acid and alkaline media was studied at 313 K. The experimental rate laws obtained are: -d[BAT]/dt=$k[BAT][CTZH]^{0.80}[H^+]^{-0.48}$ in acid medium and -d[BAT]/dt=$k[BAT][CTZH]^{0.48}[OH^-]^{0.52}[PTS]^{-0.40}$ in alkaline medium where PTS is p-toluenesulfonamide. Activation parameters and reaction constants were evaluated. The solvent isotope effect was studied using $D_2O$. The dielectric effect is positive. The stoichiometry of the reaction was found to be 1:1 and the oxidation products were identified as 4-chlorobenzophenone and (2-piperazin-1-yl-ethoxy)-acetic acid in both media. The rate of oxidation of CTZH is faster in acid medium. Suitable mechanisms and related rate laws have been worked out.

• Journal of the Korean Ceramic Society
• /
• v.35 no.1
• /
• pp.88-96
• /
• 1998

The structural and electrical properties of titanium dioxide(TiO2) thin films deposited on p-type (100) si and 4$^{\circ}$off(100) Si substartes by metalorganic chemical vapor deposition (MOCVD) have been studied with post rapid thermal annealing. TiO2 thin films of anatase phase were grown at 300-500$^{\circ}C$ using titanium post rapid thermal annealing at a temperature of 800$^{\circ}C$ for 30sec. rutile phase was observed in the condition of the deposition temperature over 350$^{\circ}C$ in the ambient air atmosphere and at 500$^{\circ}C$ in cacuu,. SEM and AFM study show-ed surface roughness were increased slightly from 40${\AA}$to 55${\AA}$ after annealing due to grain growth and phase transformation. From capacitane-voltage measurement of Al/TiO2./p-Si structure after annealing we obtained ideal capacitance-voltage characteristics of MOS structure with dielectric constant of 16-22 in case of (100) Si and about 30- in case of 4$^{\circ}$off(100) Si but showed the higher leakage current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.341-344
• /
• 1999

The effects of post annealing treatments of ferroelectrlclty in PZT(P $b_{1.05}$(Z $r_{0.52}$, $Ti_{0.48}$) $O_3$ thin film deposited on Pt/ $SiO_2$/Si substrate by RF-Magnetron sputtering methode was Investigated. Analyses by RTA(Rapid Thermal Annealing) treatments reveled that the crystallization process strongly depend on the healing temperature. The Perovskite structure with strong PZT (101) plan was obtained by RTA treatments at 75$0^{\circ}C$ With increasing RTA temperature of PZI thin films, the coercive field and remanent Polarization decreased, while saturation polarization( $P_{r}$) was decreased. P-E curves of Pt/PZT/Pt capacitor structures demonstrate typical hysteresiss loops. The measure values of $P_{r}$,. $E_{c}$ and dielectric constants by post annealed at 75$0^{\circ}C$ were 38 $\mu$C/$\textrm{cm}^2$ 35KV/cm and 974, respectively. Switching polarization versus fatigue characteristic showed 12% degradation up to 10$^{7}$ cycles.s.s.s.s.s.s.

• Korean Journal of Food Science and Technology
• /
• v.50 no.2
• /
• pp.165-171
• /
• 2018

Atmospheric-pressure plasma (APP) was applied to determine quality characteristics of brown rice (BR) and white rice (WR) of Samkwang and Palbangmi. APP (250 W, 15 kHz, ambient air) was generated and dielectric barrier discharge was applied for 0, 10, and 20 min for 2 weeks at 4 and $25^{\circ}C$. The growth of total aerobic bacteria and mold increased depending on the storage. Water content of BR and WR decreased by storage temperature and periods. No viable counts were detected for molds by APP-treated 20 min at $4^{\circ}C$. Changes in protein and damaged starch contents in plasma were not observed. Amylose contents were not changed, but WR (Palbangmi) showed a tendency to increase. The results show that APP improved the microbial quality of BR and WR of Samkwang and Palbangmi, although further studies should be conducted to determine change in quality by APP.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.1 no.4
• /
• pp.202-208
• /
• 2001

In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

• Korean Journal of Optics and Photonics
• /
• v.21 no.1
• /
• pp.33-37
• /
• 2010

We performed time-domain terahertz (THz) spectroscopy to determine optical constants of highly conductive carbon nanotube (CNT) films. The CNT films have been fabricated on a flexible plastic substrate by using spin-coating or vacuum filtration. We found that the transmission of THz waves can be controlled by manipulating the thickness of the films and by post-treatments. From amplitude and phase information of the transmitted THz waves, we obtain optical constants such as refractive indices and dielectric constants of the CNT films. The frequency dependent dielectric constants show good metallic behaviors, relevant to the Drude free electron models with high plasma frequencies. It is also found that the dielectric constants are higher for the acid-treated films. Finally, the frequency dependent dielectric constants which are free from substrate effects have been demonstrated by using CNT films deposited on cellulose membranes.

• Journal of the Korean Ceramic Society
• /
• v.37 no.3
• /
• pp.256-262
• /
• 2000

The dielectric properties of complex perovskite ($Pb_{1-x}Ca_{x}$)($Fe_{0.5}Ta_{0.5}$)$O_{3}$ with >($0.5{\le}x{\ge}0.65$ were investigated at microwave frequencies. Dilectric constant decreased with increasing Ca content, and was directly proportional to the cube of average ionic ra야 of A-site. For the specimen of x=0.6 sintered at $1250^{\circ}C$ for 3 h in air, dielectric constant (k) of 63, QF of 11000 GHz, and the temperature coefficient of resonant frequency(TCF) of -14ppm/$^{\circ}C$ were obtained. As Ca content increased, TCF of the specimen negatively increased due to the reduction of the tolerance factor(t). Changes in intrinsic loss with varying Ca content was investigated by the infrared reflectivity spectra ranging 50 to 4000 $cm^{-1}$, which were calculated by the Kramers-Kronig analysis and classical oscillator model. The relative tendency of microwave dielectric properties of the ($Pb_{1-x}Ca_{x}$)($Fe_{0.5}Ta_{0.5}$)$O_{3}$ specimens calculated from the reflectivity data were in good agreement with the results by the post resonant method.