• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.153-156
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• 2004

The $Pb(Zr_{0.4}Ti_{0.6})O_3/Pb(Zr_{0.6}Ti_{0.4})O_3$ [PZT(4060)/(6040)] heterolayered thin films were deposited by RF sputtering method on the $Pt/TiO_2/SiO_2/Si$ substrate. The effects of the structural and dielectric properties of PZT heterolayered thin films were investigated. The MFM(Metal Ferroelectric Metal) type capacitors were made using the PZT(6040)/(4060) heterolayered thin films deposited with optimum deposition condition. An enhanced dielectric property was observed in the PZT(4060)/(6040) thin films. Investigating the dielectric constant and dielectric loss characteristics. the application for the next-generation dielectric thin films and memory devices were studied.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.206-210
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• 1996

In order to investigate the electrical properties for transformer oils which contains a Pure sodium chloride, the dielectric properties is made researches. To measure the dielectric loss of specimen, a coaxial cylindrical liquid electrode is used, and its geometric capacitance is confirmed to 16[pF]. And the dielectric dissipation factor, tan$\delta$, is measured by using the Video Bridge 2150. The thermal static oven with an automatically static temperature controller is used so as to support specific temperature to the specimen. This experiments for measuring the dielectric lass is performed at 20-120[$^{\circ}C$] in the temperature range, 30∼1.5x10$\^$5/[Hz] in the frequency range and 300∼1500[mV] in the voltage range. The result of experiment for the movement of carrier and the physical constants to contribute dielectric properties of specimen with a pure sodium chloride.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.114-117
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• 2001

$(Ba_{0.6-x}Sr_{0.4}Ca_x)TiO_3$(x=0.10, 0.15, 0.20) ceramics were fabricated by the mixed-oxide method and their structural and dielectric properties were investigated with variation of composition ratio and sintering temperature. As a result of the differential thermal analysis(DTA), exothermic peak was observed at around $1020^{\circ}C$ due to the formation of the polycrystalline perovskite phase. BSCT(50/40/10) specimen sintered at $1500^{\circ}C$ showed the highest average grain size(18.25$[{\mu}m]$). Curie temperature and dielectric constant at room temperature decreased with increasing amount of Ca. BSCT(50/40/10) specimen sintered at $1450^{\circ}C$ showed a good dielectric constant, K, (=4324) and dielectric loss, $tan{\delta}$, (=0.972%) properties at 1[KHz].

• Transactions on Electrical and Electronic Materials
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• v.13 no.6
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• pp.322-325
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• 2012

Crystalline silica was synthesized by annealing amorphous silica at $1,300^{\circ}C$ or $1,400^{\circ}C$ for various times, and the crystallinity was estimated by X-ray diffraction (XRD) analysis. In order to prepare a low dielectric material, epoxy/crystalline silica composites were prepared, and the effect of silica content on the dielectric properties was studied under various functions of frequency and ambient temperature. The dielectric constant decreased with increasing crystalline silica content in the epoxy composites, and it also decreased with increasing frequency. At 120 Hz, the value of 5 wt% silica decreased by 0.25 compared to that of 40 wt% silica, and at 23 kHz, the value of 5 wt% silica decreased by 0.23 compared to that of 40 wt% silica. The value increased with increasing ambient temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.362-367
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• 2008

We have Manufactured the low-k dielectric interlayer fabricated by plasma enhanced chemical vapor deposition (PECVD), The thin film of SiOCH is studied correlation between components and Dielectric constant. The precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1sccm step in the constant flow rate of 60 sccm $O_2$ in process chamber. The chemical characteristics of SiOCH were analyzed by measuring FT/IR absorption lines and obtained each dielectric constant measuring C-V. Then compare respectively. ILD of BTMSM/$O_2$ could have low dielectric constant about $k\sim2$, and react sensitively. Also dielectric constant could be decreased by the effects of decreasing $CH_3$ and growing Si-O-Si(C) after annealing process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.53-60
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• 2009

$ZrTiO_4$ dielectric thin films were coated by metal-organic decomposition, and annealed by rapid thermal processing up to $900^{\circ}C$ for their crytallization. Crystallized single-phase $ZrTiO_4$ thin films were fabricated above the annealing temperature of $800^{\circ}C$, but their grains were randomly oriented without specific textured orientation. Best dielectric properties were presented by the sample annealed at $800^{\circ}C$ which had crystalline structure and flat surface. Dielectric constant of the film was maintained at 32 throughout full frequency range up to 6 GHz, and dielectric loss was varied between 0.01 and 0.04.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.224-230
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• 2003

The voltage-dependent transmittance curve of a homogeneously aligned liquid crystal (LC) cell driven by fringe-electric field(named FFS mode) was studied, while changing dielectric anisotropy of a LC. The results show that for a LC with positive dielectric anisotropy while positioning at initial position. Therefore, we conclude that the dynamic stability is strongly dependent on the types of the LCs and voltage-dependent dynamics of the LC with negative dielectric anisotropy is staler than that of the LC with positive dielectric anisotropy in the FFS mode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.177-180
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• 1999

In this paper, we studied Surface Discharge Type Flat Fluorescent Lamp(FFL) with High Luminance for LCD Backlighting. This lamp is Surface Discharge Type structure with a pair of Sodalime glass, insulator layer, phosphor layer, and Xe gas gap. There are two influences of Electric field on different dielectric thickness. The Electric field difference at the dielectric layer itself enhances minimum value of firing voltage and luminance uniformity. So, we measured the Electric filed at 0.5mm, 1mm gap length and discharge voltage for difference dielectric layer thickness. In experiment result, the thicker dielectric layer has higher firing voltage and lower current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.169-172
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• 2000

In this paper, we evaluated the mechanical and dielectric properties of LDPE depend on $Co_{60}$${\gamma}$-irradiation doses. The chemical analyses for FT-IR, gel content, the mechanical properties for elongation at break and the dielectric parameters for permittivity, tan$\delta$ were discussed as a function of irradiation doses. Test result presented that elongation at break of irradiated LDPE was inversely proportional to gel content. For dielectric analyses, permittivity showed a salient characteristic for various irradiation doses, it was related to polar groups caused radiation degradation and tan$\delta$ of irradiated LDPE increased with irradiation doses.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.663-666
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• 2004

In this paper, we have investigated the structure and dielectric properties of the $(Ba_{0.6}Sr_{0.4})TiO_3$ (BST) thin films film fabricatedon MgO(100)/Si substrate by an alkoxide-based sol-gel method. Both the structure and morphology of films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). For the MgO(100)/Si substrates, the BST thin films exhibited highly (100) orientation. The highly (100)-oriented BST thin films showed high dielectric constant, tunability, and figure of merit (FOM). The dielectric constants, dielectric loss and tunability of the BST thin films annealed at 700 C deposited on the MgO(100)/Si substrates measured at 10 kHz were 515.9, 0.0082, and 54.3 %, respectively.