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http://dx.doi.org/10.4313/JKEM.2008.21.4.362

Properties of SiOCH Thin Film Dielectric Constant by BTMSM/O2 Flow Rates  

Kim, Jong-Wook (청주대학교 전자공학과)
Hwang, Chang-Su (공군사관학교 물리학과)
Kim, Hong-Bae (청주대학교 전자정보공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.4, 2008 , pp. 362-367 More about this Journal
Abstract
We have Manufactured the low-k dielectric interlayer fabricated by plasma enhanced chemical vapor deposition (PECVD), The thin film of SiOCH is studied correlation between components and Dielectric constant. The precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1sccm step in the constant flow rate of 60 sccm $O_2$ in process chamber. The chemical characteristics of SiOCH were analyzed by measuring FT/IR absorption lines and obtained each dielectric constant measuring C-V. Then compare respectively. ILD of BTMSM/$O_2$ could have low dielectric constant about $k\sim2$, and react sensitively. Also dielectric constant could be decreased by the effects of decreasing $CH_3$ and growing Si-O-Si(C) after annealing process.
Keywords
Low-k; SiOCH film; BTMSM precursor; PECVD; FTIR; 2D-correlation analysis; C-V characteristics;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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