• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.388.1-388.1
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• 2014

The performance of PVA(polyvinyl alchol) is better than another organic dielectric material. Therefore, PVA has been researched for organic and in-organic dielectric material. But research of changing PVA's dielectric constant and leakage current by increasing temperature and concentration was insigificant. We try to find pure PVA and cross-linked PVA's characteristic of dielectric by changing temperature and concentration. 5/10/15wt% PVA concentration (5% interval) was in progress, PVA at $100/150/200/250^{\circ}C$ ($50^{\circ}C$ interval) of experiments was conducted in relation to temperature. The higher the concentration, leakage currents decrease, and dielectric constant is increased. With regard to temperature, we could not see a big change of leakage current and dielectric constant of pure PVA until $200^{\circ}C$. However, we could see a tendency to increase significantly at $250^{\circ}C$. Also, leakage current and dielectric constant of cross-linked PVA gradually increased from at $100^{\circ}C$ to $200^{\circ}C$ and then sharply increased from at $250^{\circ}C$. We tried to find that PVA's inner bonds(hydroxyl group (OH-) lead to the results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.10
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• pp.1115-1121
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• 2008

In this paper, dielectric slab loaded cylindrical cavity resonator measurement technique is presented to determine the dielectric constant of a dielectric material. The dielectric constant is measured by the resonant frequency deviation of empty and dielectric slab loaded cavity. Characteristic equations are derived by th exact field analysis. The measurement configurations are formed using HP8719A vector network analyzer and an experimental cylindrical metallic cavity with circular cross-section. The validity of the theory is confirmed by experiments and CST MWS 4.0(3D simulator). The results were in the whole satisfactory. The measured dielectric constant of teflon and bakelite are 2.03 and 4.44, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.345-348
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• 1999

The monolayer behaviors at the air-water interface and the dielectric properties of MI-0 LB films for complex concentration were investigated by the surface pressure-area ($\pi$-A) isotherms and dielectric constant. The molecular area was expanded with increase of metal ions concentration. It is considered that the expansion of molecular area is due to electrostatic repulsion between the polymer chains andhydrophobic increase of ionic strength. In the frequency-dependent complex dielectric constant at room temperature, the real part of dielectric constant($\varepsilon'$) is about 6.0~10.0 in the low-frequency range and is decreasing slowly upto $1O^4$Hz. It decreased abruptly near $1O^5Hz$. It seems to be dielectric dispersion in this frequency range. Also, the imaginary part of dielectric constant ($\varepsilon"$) shows a peak in $1O^5$~$1O^6Hz$. It seems to be dielectric absorption in this frequency range.ange.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1092-1095
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• 2005

The effect of the dielectric constant (${\varepsilon}$) of bonding materials in screen-printed carbon nanotube cathode on field enhancement factor was investigated using the ANSYS software for high-efficient CNT-cathodes. The field enhancement factor increased with decreasing the dielectric constant and reaching a maximum value when the dielectric constant is 1, the value for a vacuum. This indicates that the best bonding materials for screen-printing CNT cathodes should have a low dielectric constant and this can be used as criteria for selecting bonding materials for use in CNT pastes for high-efficient CNT-cathodes

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.362-367
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• 2008

We have Manufactured the low-k dielectric interlayer fabricated by plasma enhanced chemical vapor deposition (PECVD), The thin film of SiOCH is studied correlation between components and Dielectric constant. The precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1sccm step in the constant flow rate of 60 sccm $O_2$ in process chamber. The chemical characteristics of SiOCH were analyzed by measuring FT/IR absorption lines and obtained each dielectric constant measuring C-V. Then compare respectively. ILD of BTMSM/$O_2$ could have low dielectric constant about $k\sim2$, and react sensitively. Also dielectric constant could be decreased by the effects of decreasing $CH_3$ and growing Si-O-Si(C) after annealing process.

• The Journal of Natural Sciences
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• v.8 no.1
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• pp.17-22
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• 1995

Dielectric constant was measured near the consolute point of a binary mixture of water and Poly[bis(methoxyethoxyethoxy)phosphazene], MEEP. Dielectric constant changed incontinously at phase separation temperature plotted against the concentration to abtain coexistence curve. The critical temperatures and the critical concentration were $71^{\circ}C$, 5.5% as determined from the coexistence curve, respectivley. The critical exponent of dielectric constant, $\theta$, was 0.85. The dependence of dielectric constant on frequency is discussed in this report.

• Journal of the Korean Applied Science and Technology
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• v.32 no.1
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• pp.40-47
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• 2015

Single-walled carbon nanotubes (SWNTs) was modified with various length of linear alkyl chains and passivated to form dielectric filler. The modified SWNTs embedded into epoxy matrix to fabricate a flexible composite with high dielectric constant. The dielectric behavior of the composite was significantly changed with various alkyl chain length(n) of pyrene. The dielectric constant of the epoxy/SWNTs composite significantly increased with respect to increase in length of alkyl chain at the frequency range from 10 to 105Hz (n=12and18).We also found that the passivated epoxy/SWNTs composite with high dielectric constant presented low dielectric loss. The resulted dielectric performances corresponded to de-bundling of nanotubes and their distribution behavior in the matrix in terms of tail length of alkyl pyrene in the passivation layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.31-34
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• 2009

We investigated the effect of relative dielectric constant of front dielectric layer on the efficacy of plasma display panel. Dielectric materials with relative dielectric constant of around 6 and 7 were developed. When the front dielectric layer had a low relative dielectric constant, power consumption decreased more than luminance did. And it led to efficacy enhancement. However, the minimum sustain voltage increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.942-946
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• 2004

The crystalline and dielectric properties on Al$_2$O$_3$ filled glass frit (CaO-Al$_2$O$_3$-SiO$_2$-MgO-B$_2$O$_3$) with admixtures of TiO$_2$ have been investigated. The dielectric constant value of 7.5 ∼ 7.8, qualify factor value of 700 were obtained for glass frit : Al$_2$O$_3$(50 : 50 wt%) ceramics. Addition of TiO$_2$ less than 5 wt% slightly increased the dielectric constant from 7.8 to 8.8 due to higher dielectric constant of TiO$_2$. With increasing the amount of TiO$_2$ up to 5 wt%, the temperature coefficient of dielectric properties was improved. When the TiO$_2$ 5 wt% were added, dielectric properties were dielectric constant 8.8, quality factor 840 and the temperature coefficient of dielectric 45 ppm/$^{\circ}C$ at a sintering temperature 920$^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.3
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• pp.57-67
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• 2002

Increased signal speed can be obtained in three ways: changing the layout and/or the ratio of the width to thickness of the metal lines, decreasing the specific resistance of the interconnect metal, and decreasing the dielectric constant of the insulating material (intermetal dielectric). Further advancement cannot be expected from changing layout or decreasing specific resistance. The only alternative is to use an insulating material with a lower dielectric constant than other ones used presently. A large variety of polymers has been proposed for use as materials with low dielectric constants for applications in microelectronics. In this review, the properties of selected polymers as well as various fabrication methods for polymer thin films are discussed. Based on the properties described so far, and the requirements for applications as intermetal dielectric material, the possibilities for further developments also are discussed.