• Journal of the Semiconductor & Display Technology
• /
• v.5 no.3 s.16
• /
• pp.5-10
• /
• 2006

This paper investigates cutting qualities after laser dicing and predicts the problems that can be generated by laser dicing. And through 3 point bending test, die strength is measured and the die strength after laser dicing is compared with the die strength after mechanical sawing. Laser dicing is chiefly considered as an alternative to overcome the defects of mechanical sawing such as chipping on the surface and crack on the back side. Laser micromachining is based on the thermal ablation and evaporation mechanism. As a result of laser dicing experiments, debris on the surface of wafer is observed. To eliminate the debris and protect the surface, an experiment is done using a water soluble coating material and ultrasonic. The consequence is that most of debris is removed. But there are some residues around the cutting line. Unlike mechanical sawing, chipping on the surface and crack on the back side is not observed. The cross section of cutting line by laser dicing is rough as compared with that by mechanical sawing. But micro crack can not be seen. Micro crack reduces die strength. To measure this, 3 point bending test is done. The die strength after laser dicing decreases to a half of the die strength after mechanical sawing. This means that die cracking during package assembly can occur.

• Proceedings of the KIEE Conference
• /
• 2006.04a
• /
• pp.327-329
• /
• 2006

In this paper, the cutting qualities by laser dicing and fracture strength of a silicon die is investigated. Laser micromachining is the non-contact process using thermal ablation and evaporation mechanisms. By these mechanisms, debris is generated and stick on the surface of wafer, which is the problem to apply laser dicing to semiconductor manufacture process. Unlike mechanical sawing using diamond blade, chipping on the surface and crack on the back side of wafer isn't made by laser dicing. Die strength by laser dicing is measured via the three-point bend test and is compared with the die strength by mechanical sawing. As a results, die strength by laser dicing shows a decrease of 50% in compared with die strength by mechanical sawing.

• Journal of Sensor Science and Technology
• /
• v.31 no.6
• /
• pp.361-365
• /
• 2022

Advanced packaging demands are driven by the need for dense integration systems. Consequently, stacked packaging technology has been proposed instead of reducing the ultra-fine patterns to secure economic feasibility. This study proposed an effective packaging process technology for semiconductor devices using a 9-inch dicing die attach film (DDAF), wherein the die attach and dicing films were combined. The process involved three steps: tape lamination, dicing, and bonding. Following the grinding of a silicon wafer, the tape lamination process was conducted, and the DDAF was arranged. Subsequently, a silicon wafer attached to the DDAF was separated into dies employing a blade dicing process with a two-step cut. Thereafter, one separated die was bonded with the other die as a substrate at 130 ℃ for 2 s under a pressure of 2 kgf and the chip was hardened at 120 ℃ for 30 min under a pressure of 10 kPa to remove air bubbles within the DAF. Finally, a curing process was conducted at 175 ℃ for 2 h at atmospheric pressure. Upon completing the manufacturing processes, external inspections, cross-sectional analyses, and thermal stability evaluations were conducted to confirm the optimality of the proposed technology for application of the DDAF. In particular, the shear strength test was evaluated to obtain an average of 9,905 Pa from 17 samples. Consequently, a 3D integration packaging process using DDAF is expected to be utilized as an advanced packaging technology with high reliability.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2006.05a
• /
• pp.251-254
• /
• 2006

In this paper, cutting qualifies and fracture strength of silicon dies by laser dicing are investigated. Laser micromachining is the non-contact process using thermal ablation and evaporation mechanisms. By these mechanisms, debris is generated and stick on the surface of wafer, which is the problem to apply laser dicing to semiconductor manufacture process. Unlike mechanical sawing using diamond blade, chipping on the surface and crack on the back side of wafer isn't made by laser dicing. Die strength by laser dicing is measured via the three-point bending test and is compared with the die strength by mechanical sawing. As a results, die strength by the laser dicing shows a decrease of 50% in compared with die strength by the mechanical sawing.

• Journal of the Korean Society for Precision Engineering
• /
• v.17 no.3
• /
• pp.47-57
• /
• 2000

In this study, PC-based dicing machine and driving software were constructed for the purpose of automation of wafer cutting process. To automate the machine, hard automation including vision, loading, and software were considered in the development. Auto loading device and vision system were adopted for the increase of productivity, GUI software programmed for the expedient operation. The dicing machine is operated by the control algorithm and some parameters. It is verified that this kind of PC based automation has a great potential compared with the conventional dicing machine when applied to manufacturing some kinds of wafers as a test purpose.

• Journal of the Korean institute of surface engineering
• /
• v.52 no.1
• /
• pp.16-22
• /
• 2019

The structural change of DLC coatings during long-term wear test and dicing test under the low loading condition was investigated. DLC coatings were applied for the precision injection molds of a modified SNCM steel for the extension of life and the micro-diamond blades for the high cutting efficiency and the increase in life. A ball-on-disc wear tests in the mold steel and a dicing tests in the micro-diamond blades were conducted to understand degradation of DLC coatings. The degradation of DLC coatings for the injection mold steel and the micro-diamond blades during the wear and dicing tests were studied with Raman Spectroscopy. Raman peaks were divided two bands(D band and G band) to study the degradation process of DLC structure. By the wear test, polished condition of wear marks were observed to be maintained until 10 hrs of wear test period is given, but small striation marks appeared in 20 hours wear test. It was observed that $I_D/I_G$ ratios changed as the degradation of DLC coatings is proceeded during the wear tests and the dicing tests. It is suggested that the change in $I_D/I_G$ value possibly reflected from the composition of $sp^2$ and $sp^3$ bondings in DLC layers relevant to the change in mechanical and physical property.

• Journal of the Korean institute of surface engineering
• /
• v.46 no.1
• /
• pp.22-28
• /
• 2013

$WS_2$ particles were added to micro-diamond blades with Cu/Sn binding metal as lubricants to improve cutting efficiency. It was found in previous works that the added $WS_2$ lubricant could reduce remarkably the momentary energy consumption during dicing tests but increased wear rate slightly owing to weak bonding between lubricant particles and bond metals. In the present work, the surface of $WS_2$ lubricant particles were etched for activating the surface of $WS_2$ particles that provide even distribution of particles during powder mixing process and improvement of wetting at the interfaces between $WS_2$ particles and molten Cu/Sn bond metals during pressurized sintering so that could provide the improved strength of micro-blades and result in extended life. Chipping behavior of workpiece with the types of micro-blades including $WS_2$ were compared because it is important in semiconductor and micro-packaging industries to control average roughness and straightness of sliced surface which is closely related with quality.

• Journal of Applied Reliability
• /
• v.16 no.1
• /
• pp.26-31
• /
• 2016

Purpose: The purpose of this study was to investigate the effect of grinding process and thickness on the fracture strength of silicon die used for semiconductor substrate. Method: Silicon wafers with different thickness from $200{\mu}m$ to $50{\mu}m$ were prepared by chemical mechanical polishing (CMP) and dicing before grinding (DBG) process, respectively. Fracture load was measured by point load test for 50 silicon dies per each wafer. Results: Fracture strength at the center area was lower than that at the edge area of the wafer fabricated by DBG process, while random distribution of the fracture strength was observed for the CMPed wafer. Average fracture strength of DBGed specimens was higher than that of the CMPed ones for the same thickness of wafer. Conclusion: DBG process can be more helpful for lowering fracture probability during the semiconductor fabrication process than CMP process.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.16 no.6
• /
• pp.1-6
• /
• 2017

Recently, the brittle materials such as ceramics, glass, sapphire and textile material have been widely used in semiconductors, aerospace and automobile owing to high functional characteristics. On the other hand, it has the characteristics of difficult-to-cut material relative to all materials. In this study, diamond electro-deposited band-saw machine was developed to operate stably using water-coolant type through relative motion between band-saw tool and $Al_2O_3$ material. High densified $Al_2O_3$ material was manufactured by spark plasma sintering method. The bulk density was observed by the Archimedes law and the theoretical density was estimated to be $3.88g/cm^3$ and its hardness 14.7 MPa. From the dicing sawing test of $Al_2O_3$ specimen, behavior of surface roughness and band-saw wear are dominantly affected by the increase of the band-saw linear velocity. Additionally, an continuous pattern type of diamond band-saw was a very effective due to entry impact as a one-off for brittle material.

• Journal of the Microelectronics and Packaging Society
• /
• v.16 no.1
• /
• pp.27-31
• /
• 2009

In this paper, the polymer adhesive bonding technology using wafer-level technology was investigated and warpage results were analyzed. Si and glass wafer was bonded after adhesive polymer layer and dam pattern for uniform state was patterned on glass wafer. In this study, warpage result decreased as the low of bonding temperature of Si wafer, bonding pressure and height of adhesive bonding layer. The availability of adhesive polymer bonding was confirmed by TC, HTC, Humidity soak test after dicing. The result is that defect has not found without reference to warpage.