• Title/Summary/Keyword: Device-to-device Communication

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Development of an Automatic Blood Pressure Device based on Korotkoff Sounds

  • Li, Xiong;Im, Jae Joong
    • International journal of advanced smart convergence
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    • v.8 no.2
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    • pp.227-236
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    • 2019
  • In this study, we develop a Korotkoff sound based automatic blood pressure measurement device including sensor, hardware, and analysis algorithm. PVDF-based sensor pattern was developed to function as a vibration sensor to detect of Korotkoff sounds, and the film's output was connected to an impedance-matching circuit. An algorithm for determining starting and ending points of the Korotkoff sounds was established, and clinical data from subjects were acquired and analyzed to find the relationship between the values obtained by the auscultatory method and from the developed device. The results from 86 out of 90 systolic measurements and 84 out of 90 diastolic measurements indicate that the developed device pass the validation criteria of the international protocol. Correlation coefficients for the values obtained by the auscultatory method and from the developed device were 0.982 and 0.980 for systolic and diastolic blood pressure, respectively. Blood pressure measurements based on Korotkoff sound signals obtained by using the developed PVDF film-based sensor module are accurate and highly correlated with measurements obtained by the traditional auscultatory method.

A System of Mobile Device Information Processing (모바일 단말 정보 처리 시스템)

  • Bang, Jin-Suk;Lee, Seung-Yun;Lee, Kang-Chan;Lee, Won-Suk;Jung, Hoe-Kyung
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.11 no.11
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    • pp.2135-2142
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    • 2007
  • Mobile device will be able to use the various contents from the advancement of the wireless Internet and mobile device manufacture technique. Each devices is HTTP headers about under using provides device information to contents provider in the provide the contents. However, There is no standard for device information provided, so interoperability problems, because external contents using mobile phone companies to provide the device information in a different way. International Organization for Standard OMA UAProf about under using it solved interoperability problems from outside. However, in using the UAProf can not provide for the complete device information, because MMS support information, smart card support, information and support for external storage is not specified. Thus, In this paper, we designed UAProf in base which provides the contents which has become optimize to the mobile device of domestic environment the mobile device description language which expresses device information which is necessar, and it used to design and implementation of the Contents Adaptation System.

Protocol Design for Opportunistic Direct M2M Communication in Wearable Computing Environment (웨어러블 단말과 이웃 단말 간 기회기반 직접 사물통신 프로토콜 설계)

  • Oh, Young-Ho;Lee, Jae-Shin;Kang, Soon-Ju
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.39C no.2
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    • pp.151-163
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    • 2014
  • The recent wearable device's applications concentrates on providing diverse services such as location based service, context aware service to the users. These various services are implemented by the interactions between the wearable device and the user. In the legacy system, the interaction requires certain explicit configuration from the user. If the user is unfamiliar with the IT technology, it will be impossible to get the wanted service. Therefore, a new autonomous communication concept among neighbor devices is essential for people who is unfamiliar with the IT technology. The implicit human computer interface enables the user to acquire the services, even though the user don't know the IT technology. In this paper, we propose two BLE based protocols (B-LIDx protocol, B-PniP). B-LIDx protocol is the protocol for locationing the mobile device in indoor. B-PniP is a zero-configure opportunistic direct M2M communication protocol between neighbor devices to achieve the autonomous communication concept with zero-configuration. The protocol's evaluations are performed by measuring the time for finding the location of a mobile device in actual environment and aligning the time spent in services using the B-PniP.

The research on the MEMS device improvement which is necessary for the noise environment in the speech recognition rate improvement (잡음 환경에서 음성 인식률 향상에 필요한 MEMS 장치 개발에 관한 연구)

  • Yang, Ki-Woong;Lee, Hyung-keun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.22 no.12
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    • pp.1659-1666
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    • 2018
  • When the input sound is mixed voice and sound, it can be seen that the voice recognition rate is lowered due to the noise, and the speech recognition rate is improved by improving the MEMS device which is the H / W device in order to overcome the S/W processing limit. The MEMS microphone device is a device for inputting voice and is implemented in various shapes and used. Conventional MEMS microphones generally exhibit excellent performance, but in a special environment such as noise, there is a problem that the processing performance is deteriorated due to a mixture of voice and sound. To overcome these problems, we developed a newly designed MEMS device that can detect the voice characteristics of the initial input device.

Sensitivity Enhancement of a Vertical-Type CMOS Hall Device for a Magnetic Sensor

  • Oh, Sein;Jang, Byung-Jun;Chae, Hyungil
    • Journal of electromagnetic engineering and science
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    • v.18 no.1
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    • pp.35-40
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    • 2018
  • This study presents a vertical-type CMOS Hall device with improved sensitivity to detect a 3D magnetic field in various types of sensors or communication devices. To improve sensitivity, trenches are implanted next to the current input terminal, so that the Hall current becomes maximum. The effect of the dimension and location of trenches on sensitivity is simulated in the COMSOL simulator. A vertical-type Hall device with a width of $16{\mu}m$ and a height of $2{\mu}m$ is optimized for maximum sensitivity. The simulation result shows that it has a 23% better result than a conventional vertical-type CMOS Hall device without a trench.

The Design of the High-frequency SAVEN Device and the 500MHz Latched Comparator using this device (High-frequency SAVEN 소자 설계 및 이를 이용한 500MHz Latched Comparator 설계)

  • Cho, Jung-Ho;Koo, Yong-Seo;Lim, Sin-Il;An, Chul
    • Proceedings of the IEEK Conference
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    • 1999.11a
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    • pp.212-215
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    • 1999
  • High-speed device is essential to optoelectric IC for optical storage system such as CD-ROM, DVD, and to ADC for high-speed communication system. This paper represents the BiCMOS process which contains high-speed SAVEN bipolar transistor and analyzes the frequency and switching characteristics of it briefly. Finally, to prove that the SAVEN device is adequate for high-speed system, latched comparator operating at 500MHz is designed with the SPICE parameter extracted from BiCMOS device simulation.

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Development of Intelligent Gripper Control Device to Safely Grip Unknown Objects (미지물체를 안전하게 잡기 위한 지능형 그리퍼의 제어장치 개발)

  • Kim, Han-Sol;Kim, Gab-Soon
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.21 no.4
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    • pp.31-38
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    • 2022
  • In this study, we designed and manufactured an intelligent gripper-control device to safely grip unknown objects. The gripper control device consists of a DSP circuit, power supply circuit, communication circuit, and amplifier circuit diagrams. The DSP is used because the values of the 3-axis force sensor to which the gripper is attached are measured and calculated at high speeds. The gripping force is determined based on this value, and the object must be safely gripped with the determined value. A basic characteristic test of the control device of the manufactured intelligent gripper was conducted, and it was confirmed that it operated safely.

A Study about the Device Integration in Fieldbus System (필드버스 시스템에서의 기기통합에 관한 연구)

  • 문용선;이명복;정철호
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.8 no.2
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    • pp.324-330
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    • 2004
  • To integration the field device as a control system correctly in fielders systems. We have to offer the DD(Device Description) with the function and internal parameter into the configuration software. The DD which is written in the DDL(Device Description Lansuage) is made as IEC 61804-PART 2 and it is used in Profibus, Foundation Field bus, HART. However, the DD is dependent to the fieldbus and it doesn't have a suitable form in the industrial Ethernet. Therefore, in this paper, we described the internal function and parameter of the Field device as XDD(XML for Device Description) by using XML (extensible Markup Language) which isn't dependent to fieldbus and has a suitable form for industrial ethernet. Futhermore, we present the possibility of XDD's application in the distributed control system by examining the possibility of ethernet's development in the industrial area.

Effect of the LiF anode interfacial layer on polymer light emitting diodes

  • Sohn, Sun-Young;Lee, Dae-Woo;Park, Keun-Hee;Jung, Dong-Geun;Kim, H.M.;Manna, U.;Yi, J.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1056-1058
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    • 2005
  • Electrical and optical characteristics of MEH-PPV-based PLEDs with the LiF anode interfacial layer were investigated. The maximum luminance efficiency of the device with a LiF anode interfacial layer of 1-nm-thick was 3.0 lm/W, which is higher than 1.97 lm/W of the device without a LiF layer. By inserting LiF, excess injected holes from ITO anode can be blocked and hence the recombination ratio of electrons and holes can be increased in the emitting layer to improve device efficiency.

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Analysts on the Sealing of Nano Structure MOSFET (나노 구조 MOSFET의 스켈링에 대한 특성 분석)

  • 장광균;정학기;이종인
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.5 no.3
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    • pp.573-579
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    • 2001
  • The technology for characteristic analysis of device for high integration is changing rapidly. Therefore to understand characteristics of high -integrated device by computer simulation and fabricate the device having such characteristics became one of very important subjects. As devices become smaller from submicron to nanometer, we have investigated MOSFET built on an epitaxial layer(EPI) of a heavily-doped ground plane by TCAD(Technology Computer Aided Design) to develop optimum device structure. We analyzed and compared the EPI device characteristics such as impact ionization, electric field and I-V curve with those of lightly doped drain(LDD) MOSFET. Also, we presented that TCAD simulator is suitable for device simulation and the scaling theory is suitable at nano structure device.

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