• Title/Summary/Keyword: Device-to-Device

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Oral hygiene device and related factors in cardiovascular disease patients (심혈관계질환자의 구강관리용품 사용과 관련요인)

  • Park, Sin-Young
    • Journal of Korean society of Dental Hygiene
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    • v.20 no.5
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    • pp.603-610
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    • 2020
  • Objectives: This study was aimed at investigating the oral hygiene device use by cardiovascular disease patients and assessing related factors. Methods: We used data of 1,630 cardiovascular disease patients (including hypertension, stroke, and myocardial infarction) from the 7th Korean National Health and Nutrition Examination Survey (2016-2018). The χ2 test and logistic regression analysis were performed to analyze the oral hygiene device use by the subjects and assess related factors. All statistical analyses were performed with the IBM SPSS Statistics, version 20.0. Results: The oral hygiene device use and related factors were significantly higher in patients with an educational level of middle school or below high school, with a score of 1.85 (95% confidence interval [CI] = 1.35-2.53), or college, with a score of 1.93 (95% CI = 1.19-3.14), compared to those with an educational level below primary school. Further, the oral hygiene device use and related factors were significantly higher in patients who answered 'yes', with a score of 1.96 (95% CI = 1.42-2.73), compared to those who answered 'no' to the question on oral examination. Conclusions: More patients with cardiovascular disease did not use oral hygiene devices than those who did. It is necessary to expand the approach of preventive treatment to increase the utilization rate of oral hygiene devices.

Development of Intelligent Filler Wire Feeding Device for Improvement of Weld quality (용접부 품질향상을 위한 지능형 용접 와이어 공급 장치 개발)

  • Lee Jae-Seok;Sohn Young-Il;Park Ki-Young;Lee Kyoung-Don
    • Journal of the Korean Society for Precision Engineering
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    • v.23 no.7 s.184
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    • pp.59-66
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    • 2006
  • In laser welding, automatic seam tracking is important to adjust the laser head position in real time as it moves along the seam. Also if the joint gap is occurred, filling the missing material into the joint gap is necessary to prevent welding defects and bad welding quality. In general, the joint gap width is not constant along the seam due to a variety of reason. So it is essential to control the filler wire speed into the joint gap to acquire good welding quality. This paper describes an intelligent filler wire feeding device which can control 3-dimensional seam tracking and the filler wire speed by measuring the gap position and the joint gap width in laser welding. We call this device as Smart Micro Control system(SMC). To achieve this objective, we assessed weld quality in 2mm sheets of A16061 which had various gap width by using the developed device. From the experimental results, It was found the possibility that the developed device could be used in welding various 3-dimensional structures.

Development of Rotary Transfer Forming Device for Process Reduction in Forming (프레스 공정 단축을 위한 회전식 트랜스퍼 성형장치 개발)

  • Kim, Seung-Gi;Youn, Jae-Woong
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.23 no.5
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    • pp.413-420
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    • 2014
  • Although the transfer forming process has various advantages, it is also inefficient for the use of multiple press machines, especially for small part sizes. In this study, a new forming process was proposed to use multiple tandem dies in a single press machine. A rotary transfer forming device was developed to combine the advantages of the progressive and transfer forming process. In this study, a detailed forming process using this device was analyzed, and the device was designed to perform four series of tandem forming processes in a single press. In order to analyze the feasibility of this forming process, simple forming dies were made. As a result, the position accuracy was 4 arcsec, and the forming speed reached up to 20 strokes per minute. It is thought that this rotary transfer forming device can help to save initial setup costs through the more efficient use of space in a press machine.

Interference Mitigation Scheme by Antenna Selection in Device-to-Device Communication Underlaying Cellular Networks

  • Wang, Yuyang;Jin, Shi;Ni, Yiyang;Wong, Kai-Kit
    • Journal of Communications and Networks
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    • v.18 no.3
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    • pp.429-438
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    • 2016
  • In this paper, we investigate an interference mitigation scheme by antenna selection in device-to-device (D2D) communication underlaying downlink cellular networks. We first present the closed-form expression of the system achievable rate and its asymptotic behaviors at high signal-to-noise ratio (SNR) and the large antenna number scenarios. It is shown that the high SNR approximation increases with more antennas and higher ratio between the transmit SNR at the base station (BS) and the D2D transmitter. In addition, a tight approximation is derived for the rate and we reveal two thresholds for both the distance of the D2D link and the transmit SNR at the BS above which the underlaid D2D communication will degrade the system rate. We then particularize on the small cell setting where all users are closely located. In the small cell scenario, we show that the relationship between the distance of the D2D transmitting link and that of the D2D interfering link to the cellular user determines whether the D2D communication can enhance the system achievable rate. Numerical results are provided to verify these results.

Study on the Blocking Voltage and Leakage Current Characteristic Degradation of the Thyristor due to the Surface Charge in Passivation Material (표면 전하에 의한 Thyristor 소자의 차단전압 및 누설전류특성 연구)

  • Kim Hyoung-Woo;Seo Kil-Soo;Bahng Wook;Kim Ki-Hyun;Kim Nam-Kyun
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.1
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    • pp.34-39
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    • 2006
  • In high-voltage devices such as thyristor, beveling is mostly used junction termination method to reduce the surface electric field far below the bulk electric field and to expand the depletion region thus that breakdown occurs in the bulk of the device rather than at the surface. However, coating material used to protect the surface of the device contain so many charges which affect the electrical characteristics of the device. And device reliability is also affected by this charge. Therefore, it is needed to analyze the effect of surface charge on electrical characteristics of the device. In this paper, we analyzed the breakdown voltage and leakage current characteristics of the thyristor as a function of the amount of surface charge density. Two dimensional process simulator ATHENA and two-dimensional device simulator ATLAS is used to analyze the surface charge effects.

Inter-clustering Cooperative Relay Selection Schemes for 5G Device-to-device Communication Networks

  • Nasaruddin, Nasaruddin;Yunida, Yunida;Adriman, Ramzi
    • Journal of information and communication convergence engineering
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    • v.20 no.3
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    • pp.143-152
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    • 2022
  • The ongoing adoption of 5G will increase the data traffic, throughput, multimedia services, and power consumption for future wireless applications and services, including sensor and mobile networks. Multipath fading on wireless channels also reduces the system performance and increases energy consumption. To address these issues, device-to-device (D2D) and cooperative communications have been proposed. In this study, we propose two inter-clustering models using the relay selection method to improve system performance and increase energy efficiency in cooperative D2D networks. We develop two inter-clustering models and present their respective algorithms. Subsequently, we run a computer simulation to evaluate each model's outage probability (OP) performance, throughput, and energy efficiency. The simulation results show that inter-clustering model II has the lowest OP, highest throughput, and highest energy efficiency compared with inter-clustering model I and the conventional inter-clustering-based multirelay method. These results demonstrate that inter-clustering model II is well-suited for use in 5G overlay D2D and cellular communications.

A Study on SCR-based Dual Directional ESD Protection Device with High Holding Voltage by Self-Biasing Effect (Self-Biasing 효과로 높은 홀딩 전압을 갖는 SCR 기반 양방향 ESD 보호 소자에 관한 연구)

  • Jung, Jang-Han;Jeong, Seung-Koo;Koo, Yong-Seo
    • Journal of IKEEE
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    • v.26 no.1
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    • pp.119-123
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    • 2022
  • This paper propose a new ESD protection device suitable for 12V class applications by adding a self-biasing structure to an ESD protection device with high holding voltage due to additional parasitic bipolar BJT. To verify the operating principle and electrical characteristics of the proposed device, current density simulation and HBM simulation were performed using Synopsys' TCAD Simulation, and the operation of the additional self-biasing structure was confirmed. As a result of the simulation, it was confirmed that the proposed ESD protection device has a higher level of holding voltage compared to the existing ESD protection device. It is expected to have high area efficiency due to the dual structure and sufficient latch-up immunity in 12V-class applications.

Development of Brace-type Wearable Robot for Lumbar Stabilization (요부 안정화를 위한 복대형 입는 로봇 개발)

  • Joowan Kim;Jaehoon Sim;Keewon Kim;Sungun Chung;Jaeheung Park
    • The Journal of Korea Robotics Society
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    • v.18 no.2
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    • pp.189-196
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    • 2023
  • An abdominal brace is a recommended treatment for patients with lumbar spinal disorders. However, due to the nature of the static brace, it uniformly compresses the lumbar region, which can weaken the lumbar muscles or create a psychological dependence that worsens the condition of the spine when worn for an extended period of time. Due to these issues, doctors limit the wearing time when prescribing it to patients. In this paper, we propose a device that can dynamically provide abdominal pressure and support according to the lumbar motion. The proposed device is a wearable robot in the form of a brace, with actuators and a driving unit mounted on the brace. To enhance wearability and reduce the weight of the device, worm gears actuator and a multi-pulley mechanism were adopted. Based on the spinal motion of the wearer measured by the Inertia measurement unit sensors, the drives wire by driving pulley, which provide tension to the multi-pulley mechanism on both sides, dynamically tightening or loosening the device. Finally, the device can dynamically provide abdominal pressure and support. We describe the hardware and system configuration of the device and demonstrate its potential through basic control experiments.

A safe, stable, and convenient three-dimensional device for high Le Fort I osteotomy

  • Sugahara, Keisuke;Koyachi, Masahide;Odaka, Kento;Matsunaga, Satoru;Katakura, Akira
    • Maxillofacial Plastic and Reconstructive Surgery
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    • v.42
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    • pp.32.1-32.4
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    • 2020
  • Background: Le Fort I osteotomy is a highly effective treatment for skeletal jaw deformities and is commonly performed. High Le Fort I osteotomy is a modified surgical procedure performed for improving the depression of the cheeks by setting the osteotomy higher than the conventional Le Fort I osteotomy. Developments in three-dimensional (3D) technology have popularized the use of 3D printers in various institutions, especially in orthognathic surgeries. In this study, we report a safe and inexpensive method of performing a high Le Fort I osteotomy using a novel 3D device and piezosurgery, which prevent tooth root injury without disturbing the operation field for patients with a short midface and long tooth roots. Results: A 17-year-old woman presented with facial asymmetry, mandibular protrusion, a short midface, and long tooth roots. We planned high Le Fort I osteotomy and bilateral sagittal split ramus osteotomy. Prevention of damage to the roots of the teeth and the infraorbital nerve and accurate determination of the posterior osteotomy line were crucial for clinical success. Le Fort I osteotomy using 3D devices has been reported previously but were particularly large in size for this case. Additionally, setting the fixing screw of the device was difficult, because of the risk of damage to the roots of the teeth. Therefore, a different surgical technique, other than the conventional Le Fort I osteotomy and 3D device, was required. The left and right parts of the 3D device were fabricated separately, to prevent any interference in the surgical field. Further, the 3D device was designed to accurately cover the bone surface from the piriform aperture to the infra-zygomatic crest with two fixation points (the anterior nasal spine and the piriform aperture), which ensured stabilization of the 3D device. The device is thin and does not interfere with the surgical field. Safe and accurate surgical performance is possible using this device and piezosurgery. The roots of the teeth and the infraorbital nerve were unharmed during the surgery. Conclusions: This device is considerably smaller than conventional devices and is a simple, low-cost, and efficient method for performing accurate high Le Fort I osteotomy.

Convergence Study on Fabrication and Plasma Module Process Technology of ReRAM Device for Neuromorphic Based (뉴로모픽 기반의 저항 변화 메모리 소자 제작 및 플라즈마 모듈 적용 공정기술에 관한 융합 연구)

  • Kim, Geunho;Shin, Dongkyun;Lee, Dong-Ju;Kim, Eundo
    • Journal of the Korea Convergence Society
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    • v.11 no.10
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    • pp.1-7
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    • 2020
  • The manufacturing process of the resistive variable memory device, which is the based of neuromorphic device, maintained the continuity of vacuum process and applied plasma module suitable for the production of the ReRAM(resistive random access memory) and process technology for the neuromorphic computing, which ensures high integrated and high reliability. The ReRAM device of the oxide thin-film applied to the plasma module was fabricated, and research to improve the properties of the device was conducted through various experiments through changes in materials and process methods. ReRAM device based on TiO2/TiOx of oxide thin-film using plasma module was completed. Crystallinity measured by XRD rutile, HRS:LRS current value is 2.99 × 103 ratio or higher, driving voltage was measured using a semiconductor parameter, and it was confirmed that it can be driven at low voltage of 0.3 V or less. It was possible to fabricate a neuromorphic ReRAM device using oxygen gas in a previously developed plasma module, and TiOx thin-films were deposited to confirm performance.