• Title/Summary/Keyword: Device simulation

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Si-nanoplate Transistors for Flexible Electronics

  • Kim, Mincheol;Han, Jungkyu
    • Proceeding of EDISON Challenge
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    • 2013.04a
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    • pp.292-293
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    • 2013
  • Sub 10-nm thick of Si plate is simulated with the software for Nanowire Field Effect Transistor (FET) device simulation. With usual single crystal Si technology, it is difficult to realize flexible electronic devices. Here, we suggest a FET device based on thinned Si layer. The simulation implied a practical limitation of the Si plate thickness for flexible devices as 2 nm. With around this thickness, Si plate may have much flexibility than existing bulk MOSFETs.

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Modeling of Nano-scale FET(Field Effect Transistor : FinFET) (나노-스케일 전계 효과 트랜지스터 모델링 연구 : FinFET)

  • Kim, Ki-Dong;Kwon, Oh-Seob;Seo, Ji-Hyun;Won, Tae-Young
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.6
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    • pp.1-7
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    • 2004
  • We performed two-dimensional (20) computer-based modeling and simulation of FinFET by solving the coupled Poisson-Schrodinger equations quantum-mechanically in a self-consistent manner. The simulation results are carefully investigated for FinFET with gate length(Lg) varying from 10 to 80nm and with a Si-fin thickness($T_{fin}$) varying from 10 to 40nm. Current-voltage (I-V) characteristics are compared with the experimental data. Device optimization has been performed in order to suppress the short-channel effects (SCEs) including the sub-threshold swing, threshold voltage roll-off, drain induced barrier lowering (DIBL). The quantum-mechanical simulation is compared with the classical appmach in order to understand the influence of the electron confinement effect. Simulation results indicated that the FinFET is a promising structure to suppress the SCEs and the quantum-mechanical simulation is essential for applying nano-scale device structure.

A Statistical Estimation of The Universal Constants Using A Simulation Predictor

  • Park, Jeong-Soo-
    • Proceedings of the Korea Society for Simulation Conference
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    • 1992.10a
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    • pp.6-6
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    • 1992
  • This work deals with nonlinear least squares method for estimating unknown universial constants C in a computer simulation code real experimental data(or database) and computer simulation data. The best linear unbiased predictor based on a spatial statistical model is fitted from the computer simulation data. Then nonlinear least squares estimation method is applied to the real data using the fitted prediction model(or simulation predictor) as if it were the true simulation model. An application to the computational nuclear fusion device is presented.

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Design of A Haptic Device for Dismantling Process Using Excavator (굴삭기를 이용한 해체 장비용 햅틱 장치 설계)

  • Kim, Dong-Nam;Oh, Kyeong-Won;Hong, Dae-Hie;Park, Jong-Hyup
    • Proceedings of the KSME Conference
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    • 2007.05a
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    • pp.1190-1194
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    • 2007
  • Since the dismantling processes of building are very dangerous, there have been many studies to develop a remote operating devices using joystick. In this paper, in order to improve the operability of the dismantling actuator that is usually an excavator, a novel concept of tele-operated haptic device is proposed. Operators who use this haptic device with additional environmental sensing devices can work safely away from the dangerous sites. First, based on the concept design of the haptic device, the workspace mapping from the haptic device to the excavator is explored. Second, the kinematics which deals with the conversion from the 3 dimensional position information of the haptic device to the joint variable information of the backhoe is included. Lastly, 3D graphical simulation of both haptic device and the backhoe will be shown. This new design of the haptic device can be easily manufactured and gives the workers very convenient and transparent remote control capability.

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A Study of MTTF improvement of Thermal Device cryogenic-cooler (열상장비 냉각기의 MTTF 개선연구)

  • Jung, Yunsik
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.19 no.7
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    • pp.252-257
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    • 2018
  • In this paper, we propose a mean time to failure (MTTF) to improve the solution for a cryogenic cooler, which is an important part of a cooled thermal device. Common electronic devices have a high possibility of failure due to various environmental factors, such as temperature and humidity. But some special devices (such as thermal devices) are designed to overcome environmental factors. The most affected part of a cooled thermal device's MTTF is the cryogenic cooler. The MTTF of a cryogenic cooler is affected by the device's internal heat. Therefore, if the device's internal heat is reduced, the cryogenic cooler's MTTF increases. From the present device's internal heat simulation, we analyze the improvement method of the device. The proposed improvement method's effectiveness is verified by simulation and MTTF calculation.

Evaluation of turbulent SGS model for large eddy simulation of turbulent flow inside a sudden expansion cylindrical chamber (급 확대부를 갖는 실린더 챔버 내부 유동에 관한 LES 난류모델의 평가)

  • 최창용;고상철
    • Journal of Advanced Marine Engineering and Technology
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    • v.28 no.3
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    • pp.423-433
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    • 2004
  • A large eddy simulation (LES) is performed for turbulent flow in a combustion device. The combustion device is simplified as a cylindrical chamber with sudden expansion. A flame holder is attached inside a cylindrical chamber in order to promote turbulent mixing and to accommodate flame stability. The turbulent sub-grid scale models are applied and validated. Emphasis is placed on the evaluation of turbulent model for the LES of complex geometry. The simulation code is constructed by using a general coordinate system based on the physical contravariant velocity components. The calculated Reynolds number is 5000 based on the bulk velocity and the diameter of inlet pipe. The predicted turbulent statistics are evaluated by comparing with the LDV measurement data. The Smagorinsky model coefficients are estimated and the utility of dynamic SGS models are confirmed in the LES of complex geometry.

Large Eddy Simulation of Turbulent Flow Inside a Sudden Expansion Cylinder Chamber (급 확대부를 갖는 실린더 챔버 내부 유동에 관한 LES)

  • Seong, Hyeong-Jin;Go, Sang-Cheol
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.25 no.7
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    • pp.885-894
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    • 2001
  • A large eddy simulation(LES) is performed for turbulent flow in a combustion device. The combustion device is simplified as a cylinder with sudden expansion. To promote turbulent mixing and to accommodate flame stability, a flame holder is attached inside the combustion chamber. Emphasis is placed on the flow details with different geometries of the flame holder. The subgrid scale models are applied and validated. The simulation code is constructed by using a general coordinate system based on the physical contravariant velocity components. The calculated Reynolds numbers are 5000 and 50000 based on the bulk velocity and the diameter of inlet pipe. The predicted turbulent statistics are evaluated by comparing with the LDV measurement data. The agreement of LES with the experimental data is shown to be satisfactory.

Modeling of Electrical Characteristics in Poly Silicon Thin Film Transistor with Process Parameter (다결정 실리콘 박막 트랜지스터에서 공정 파라미터에 따른 전기적 특성의 모델링)

  • Jung, Eun-Sik;Choi, Young-Sik;Lee, Yong-Jae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.201-204
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    • 2001
  • In this paper, for modeling of electrical characteristics in Poly Silicon Thin Film Transistors with process parameters set up optimum values, So, the I-V characteristics of poly silicon TFT parameters are examined and simulated in terms of the variations in process parameter. And these results compared and analyzed simulation values with examination value. The simulation program for characteristic analysis used SUPREM IV for processing, Matlab for modeling by mathematics, and SPICE for electric characteristic of devices. Input parameter for simulation characteristics is like condition of device process sequence, these electric characteristic of $I_D-V_D$ $I_D-V_G$, variations of grain size. The Gate oxide thickness of poly silicon are showed similar results between real device characteristics and simulation characteristics.

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An active grid for the simulation of atmospheric boundary layers in a wind tunnel

  • Talamelli, A.;Riparbelli, L.;Westin, J.
    • Wind and Structures
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    • v.7 no.2
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    • pp.131-144
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    • 2004
  • A technique for the simulation of atmospheric boundary layers in wind tunnels is developed and tested experimentally. The device consists of a grid made of seven horizontal and vertical evenly distributed bars in which air injection holes are drilled in order to influence the flow in the wind tunnel. The air flow in each bar can be controlled independently. Firstly, the device is used together with a rough carpet, which covers the test section floor, in order to simulate the boundary-layer characteristics over an open rural area. Hot-wire measurements, performed at different positions in the test-section, show the capability of the grid in generating the required boundary layer. An acceptable agreement with statistical values of mean velocity and turbulence profiles has been achieved, together with a good span-wise homogeneity. The results are also compared with those of a passive simulation technique based on the use of spires.