• Korean Journal of Materials Research
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• v.20 no.5
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• pp.257-261
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• 2010

A non-volatile resistive random access memory (RRAM) device with a Cr-doped $SrZrO_3/SrRuO_3$ bottom electrode heterostructure was fabricated on $SrTiO_3$ substrates using pulsed laser deposition. During the deposition process, the substrate temperature was $650^{\circ}C$ and the variable ambient oxygen pressure had a range of 50-250 mTorr. The sensitive dependences of the film structure on the processing oxygen pressure are important in controlling the bistable resistive switching of the Cr-doped $SrZrO_3$ film. Therefore, oxygen pressure plays a crucial role in determining electrical properties and film growth characteristics such as various microstructural defects and crystallization. Inside, the microstructure and crystallinity of the Cr-doped $SrZrO_3$ film by oxygen pressure were strong effects on the set, reset switching voltage of the Cr-doped $SrZrO_3$. The bistable switching is related to the defects and controls their number and structure. Therefore, the relation of defects generated and resistive switching behavior by oxygen pressure change will be discussed. We found that deposition conditions and ambient oxygen pressure highly affect the switching behavior. It is suggested that the interface between the top electrode and Cr-doped $SrZrO_3$ perovskite plays an important role in the resistive switching behavior. From I-V characteristics, a typical ON state resistance of $100-200\;{\Omega}$ and a typical OFF state resistance of $1-2\;k{\Omega}$, were observed. These transition metal-doped perovskite thin films can be used for memory device applications due to their high ON/OFF ratio, simple device structure, and non-volatility.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.737-740
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• 2009

SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics, In this paper, we demonstrated that the switching performance of DMOSFETs are dependent on the with Channel length ($L_{channel}$) and Current Spreading Layer thickness ($T_{CSL}$) by using 2-D Mixed-mode simulations. The 4H-SiC DMOSFETs with a JFET region designed to block 800 V were optimized for minimum loss by adjusting the parameters of the JFET region, CSL, and epilayer. It is found that improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance. Therefore, accurate modeling of the operating conditions are essential for the optimizatin of superior switching performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.2
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• pp.81-84
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• 2014

The bipolar resistive switching characteristics of resistive random access memory (ReRAM) based on $HfO_2$ thin films have been demonstrated by using Ag/$HfO_2$/Pt structured ReRAM device. MIcrowave irradiation (MWI) treatment at low temperature was employed in device fabrication with $HfO_2$ thin films as a transition layer. Compared to the as-deposited Ag/$HfO_2$/Pt device, highly improved uniformity characteristics of resistance values and operating voltages were obtained from the MWI treatment Ag/$HfO_2$/Pt ReRAM device. In addition, a stable DC endurance (> 100 cycles) and a high data retention (> $10^4$ sec) were achieved.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.11
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• pp.63-70
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• 1999

A PLT(10) thin film has been deposited on $Pt/TiO_2/SiO_2/Si$ substrate by sol-gel method, and its switching characteristics have been investigated with various top electrode areas, input pulse voltages and loan resistances. As the external input pulse voltage increases from 2V to 5V, the switching time decreases from $0.49{\mu}s$ to $0.12{\mu}s$. The activation energy ($E_a$) obtained from the relations between the switching time and the applied pulse voltage is evaluated as 209kV/cm. The switched charge densities at 5V obtained from the hysteresis loop and the polarization switching are $11.69{\mu}C/cm^2$ and $13.02{\mu}C/cm^2$, respectively, which agree relatively well with each other and show the difference of 10%. When the top electrode area increases from TEX>$3.14{\times}10^{-4}cm^2$ to $5.03{\times}10^{-3}cm^2$ and the load resistance increases from 50${\Omega}$ to 3.3$k{\Omega}$, the switching time increases from $0.12{\mu}s$ to $1.88{\mu}s$ and from $0.12{\mu}s$ to $9.7{\mu}s$, respectively. These switching characteristics indicate that PLT(10) thin film can be well applied in nonvolatile memory devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.839-842
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• 2004

We present a fast-switching electro-optical device based on flexoelectro-optic effect in short pitch cholesterics oriented in uniform lying helix texture. The device has two operating modes: amplitude and phase modulation mode. The amplitude modulation mode is a fast in-plane switching of the device optic axis that enables to achieve a high percent of modulation of the transmitted light intensity whereas the phase mode gives a continuous change of the refractive index and thus of the phase shift of the transmitted light. By using a small concentration of diacrylate monomer and selecting the illumination conditions we have been able to create a inhomogeneous polymeric network mostly localized at both substrate surfaces and stabilize the two switching modes.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.51 no.1
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• pp.23-33
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• 2002

A hysteresis control is widely used to control output current of inverter. A hysteresis bandwidth is affected by system parameters such as source voltage, device on/off time, load inductance and resistance. The frequency limiter is used to protect switching devices overload. In the conventional hysteresis controller, a lock-out circuit with D-latch and timer is used to device protection circuit. But switching delay time and harmonic components are appeared in output current. In this paper the performance of lock-out circuit is tested, and new circuit for switching device fault protection is proposed ad it's performance is simulated.

• Proceedings of the KIEE Conference
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• 2003.04a
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• pp.266-269
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• 2003

A sterilizer equipment by using electrical energy has merits that no process of chemical and no second environmental pollution. Also, the power conversion circuit for sterilizer equipment has merits that are reducing switching loss for soft switching topology by using zero current and zero voltage switching, and miniaturizing size of equipment. Thus, it is expected that the cost of sterilization process, when quality of the device is measured by power consumption, will be reduced. Therefore, the purpose of this research is to solve the sterilization problems of existing powder with plasma sterilization device, to find more economical and effective way, and to suggest more improved sterilizer.

• Journal of information and communication convergence engineering
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• v.17 no.3
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• pp.221-226
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• 2019

In this work, a transmitter/receiver front-end module (T/R FEM) with an automatic Tx/Rx switching scheme for a 2.4 GHz microwave power transfer is developed for a retro-reflective beamforming scheme. Recently, research on wireless power transfer techniques has moved to wireless charging systems for mobile devices. Retro-reflective beamforming is a good candidate for tracking the spatial position of a mobile device to be charged. In Tx mode, the T/R FEM generates a minimum of 1 W. It also comprises an amplitude and phase monitoring port for transmitting RF power. In Rx mode, it passes an Rx pilot signal from a mobile device to a digital baseband subsystem to recognize the position of the mobile device. The insertion loss of the Rx signal path is 4.5 dB. The Tx and Rx modes are automatically switched by detecting the Tx input power. This T/R FEM is a design example of T/R FEMs for wireless charging systems based on a retro-reflective beamforming scheme.

• Proceedings of the KIPE Conference
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• 2008.06a
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• pp.187-189
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• 2008

This paper presents the synchronous soft switching boost converter. It is shown that the proposed converter effectively reduces conduction loss by using MOSFET device in place of diode in the conventional boost converter. Also, this soft switching boost converter can reduce switching loss using ZVS method through resonant inductor and capacitor. The proposed synchronous soft switching boost converter is suitable for PV generation system.

• Proceedings of the KIEE Conference
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• 2003.04a
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• pp.66-68
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• 2003

In a motor drive, the current rating is directly related to the rating of a switching device, and the parallel switching operation for a cost reduction is the alternatives because it has the smaller current rating through current division. There are many investigations for the parallel switching operations to equaling the current division. However it remains many problems for practical usage. This paper proposes a new parallel operation which uses a parallel phase winding to remove the traditional effect of switching device such as saturation voltage according to the division of current. The proposed strategy is verified by theoretical and experimental verification.