• 한국철도학회:학술대회논문집
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• 한국철도학회 2007년도 춘계학술대회 논문집
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• pp.1403-1407
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• 2007

The bogie of Rolling Stock is the basic rolling component. It operates the train body, guides the body considering various tracks and offers comfort to passengers. We can verify the safety level of bogie about all factors through the first -grade scenario of Preliminary Hazard Analysis, but especially the horizontal acceleration sensor, equipped in each power bogie and trailer bogie, is the device, which makes it possible to test bogie instability and uncomfortable body movements by the method, similar to actual train driving, and in this context the necessity of this device becomes important. This paper would classify the main functions of driving sub system and examine the reliability, availability, maintainability and safety, which are main factors of RAMS. Especially, we would realize the bogie instability sensor with a simulator and offer the content in analyzing the data by the statistical method, which are obtained through the connected test with OBCS.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2000년도 춘계학술대회 논문집
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• pp.591-594
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• 2000

In the recent day, fatigue life prediction techniques play a major role in the design of components in the ground vehicle industry. Full scale durability testing in the laboratory is an essential of any fatigue life evaluation of components or structure of the automotive vehicle. Component testing is particulary important in today's highly competitive industries where the design to reduce weight and production costs must be balanced with the necessity to avoid expensive service failure. Generally, 3-axis durability testing device is used to carry out the fatigue test. In this paper, The operation software for simultaneously driving 3-axis vibration testing device is developed and the displacement of the 3-axis actuator is separately calibrated by LDT Moreover, the input and output data are displayed in windows of PC controller with real time.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1578-1580
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• 2002

The breakdown and on-state characteristics of the multi-RESURF SOI LDMOSFET is presented. P-/n-epi layer thickness and doping concentration is varied from $2{\mu}m{\sim}5{\mu}m$ and $1{\times}10^{15}/cm^3{\sim}9{\times}10^{15}/cm^3$ to obtain optimum breakdown voltage and on-resistance. The breakdown and on-state characteristics of the device is verified by two-dimensional process simulator ATHENA and device simulator ATLAS.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1451-1453
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• 1994

A monolithic current limiting power MOSFET, which may be easily fabricated by the conventional DMOS process, is proposed. The proposed current limiting MOSFET consists of main power cells, sensing cells, and NPN lateral bipolar transistor so that users can adjust the current limiting levels with only one external resistor. The behaviors of the proposed device are numerically simulated and analyzed by 2-D device simulator MEDICI and mixed-mode simulator CA-AAM(Circuit Analysis Advanced Application Module).

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1292-1294
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• 1993

This paper proposes a new structure of polycrystalline silicon(poly-Si) thin film transistor(TFT) having a thick gate-oxide below the gate edge. The new structure is fabricated by the gate re-oxidation in wet ambient. It is shown that the thick gate-oxide below the gate edge is effective in reducing the leakage current and the gate-drain overlap capacitance. We have simulated this device by using the SSUPREM4 process simulator and the SPISCES-2B device simulator. As a simulation result it is found that the new structure provides a low tentage current less than 0.2 pA and achieves a on/off ratio as high as $5{\times}10^7$.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.53-56
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• 2002

We have developed a Monte Carlo (MC) simulator for electron beam lithography in multi-layer resists and multi-layer substrates in order to fabricate and develop high-speed PHEMT devices for millimeter- wave applications. For the deposited energy calculation to multi-layer resists by electron beam in MC simulation, we modeled newly for multi-layer resists and heterogeneous multi-layer substrates. Using this model, we simulated T-gate or r-gate fabrication process in PHEMT device and showed our results with SEM observations.

• 한국감성과학회:학술대회논문집
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• 한국감성과학회 2002년도 추계학술대회 논문집
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• pp.47-52
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• 2002

가상공간에서 탑승자에게 운동감을 제공하기 위해서 수많은 형태의 모션 시뮬레이터가 개발되어 왔다. 하지만 이러한 형태의 시뮬레이터들은 그 고유한 형태에 의해 정해진 동역학과 워시아웃 알고리즘을 거쳐야만 정밀한 시뮬레이터가 될 수 있다. 본 논문은 기존의 좁은 시야공간에서의 시뮬레이터가 아닌 넓은 시야를 제시하고, 모션 베이스와 독립적으로 운영되는 영상 제시기를 이용하여 탑승자에게 운동감을 제공하는 분리형 시뮬레이터를 대상으로 하여 영상과 모션을 동기화시켜서 제시하는 방법에 대해 논의하고자 한다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권2호
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• pp.160-164
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• 2010

The radio frequency (RF) model of SOI FinFETs with gate length of 40 nm is verified by using a 3-dimensional (3-D) device simulator. This paper shows the equivalent circuit model which can be used in the circuit analysis simulator. The RMS modeling error of Y-parameter was calculated to be only 0.3 %.

• 한국정밀공학회지
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• 제17권9호
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• pp.21-31
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• 2000

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2002년도 춘계공동학술발표회요약집
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• pp.269.2-269
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• 2002