JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Non-Quasi-Static RF Model for SOI FinFET and Its Verification

  • Kang, In-Man (School of Electronics Engineering, Kyungpook National University)
  • Received : 2010.04.13
  • Published : 2010.06.30
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Abstract

The radio frequency (RF) model of SOI FinFETs with gate length of 40 nm is verified by using a 3-dimensional (3-D) device simulator. This paper shows the equivalent circuit model which can be used in the circuit analysis simulator. The RMS modeling error of Y-parameter was calculated to be only 0.3 %.

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References

  1. A. A. Breed and K. P. Roenker, “A small-signal, RF simulation study of multiple-gate and silicon-on insulator MOSFET devices,” 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, September 2004, pp.294-297.
  2. S. Jin, C. H. Park, I.-Y. Chung, Y. J. Park, and H. S. Min, “NANOCAD Framework for Simulation of Quantum Effects in Nanoscale MOSFET Devices,” Journal of Semiconductor Technology and Science, March, 2006, Vol.6, No.1, pp.1-9.
  3. N.-K. Tak and J.-H. Lee, “RF small signal modeling of tri-gate MOSFETs implemented on bulk Si wafers,” 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, September, 2004, pp.266-269.
  4. G. Baccarani and S. Reggiani, “A compact double-gate MOSFET model comprising quantummechanical and nonstastic effect,” IEEE Transaction on Electron Devices, August, 1999, Vol.46, No.8, pp.1656-1666. https://doi.org/10.1109/16.777154
  5. I. M. Kang and H. Shin, “Non-quasi-static small-signal modeling and analytical parameter extraction of SOI FinFETs,” IEEE Transaction on Nanotechnology, May, 2006, Vol.5, No.3, pp.205-210. https://doi.org/10.1109/TNANO.2006.869946
  6. M. Je and H. Shin, “Accurate four-terminal RF MOSFET model accounting for the short-channel effect in the source-to-drain capacitance,” 2003 International Conference on Simulation of Semiconductor Processes and Devices, September, 2003, pp.247-250.
  7. Y. Tsividis, “Operation and Modleing of The MOS Transistor”, 2nd ed, McGraw-Hill, 1999.

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