Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Breakdown and On-state characteristics of the Multi-RESURF SOI LDMOSFET

Epi층의 농도 및 두께 변화에 따른 Multi-RESURF SOI LDMOSFET의 특성분석

  • Kim, Hyoung-Woo (Power Semiconductor Group, Korea Electrotechnology Research Institute) ;
  • Kim, Sang-Cheol (Power Semiconductor Group, Korea Electrotechnology Research Institute) ;
  • Seo, Kil-Su (Power Semiconductor Group, Korea Electrotechnology Research Institute) ;
  • Kim, Nam-Kyun (Power Semiconductor Group, Korea Electrotechnology Research Institute) ;
  • Kim, Eun-Dong (Power Semiconductor Group, Korea Electrotechnology Research Institute)
  • 김형우 (한국전기연구원 전략기술연구단 전력반도체연구그룹) ;
  • 김상철 (한국전기연구원 전략기술연구단 전력반도체연구그룹) ;
  • 서길수 (한국전기연구원 전략기술연구단 전력반도체연구그룹) ;
  • 김남균 (한국전기연구원 전략기술연구단 전력반도체연구그룹) ;
  • 김은동 (한국전기연구원 전략기술연구단 전력반도체연구그룹)
  • Published : 2002.07.10
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Abstract

The breakdown and on-state characteristics of the multi-RESURF SOI LDMOSFET is presented. P-/n-epi layer thickness and doping concentration is varied from $2{\mu}m{\sim}5{\mu}m$ and $1{\times}10^{15}/cm^3{\sim}9{\times}10^{15}/cm^3$ to obtain optimum breakdown voltage and on-resistance. The breakdown and on-state characteristics of the device is verified by two-dimensional process simulator ATHENA and device simulator ATLAS.

Keywords