• The Journal of Korean Institute of Communications and Information Sciences
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• v.38A no.7
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• pp.571-579
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• 2013

This paper proposes an energy-efficient mode selection and power allocation scheme in device-to-device (D2D) communication system as an underlay coexistence with cellular networks. We analyze the energy efficiency which is defined as the summation of the energy efficiencies for all devices. The proposed scheme consists of two steps. First, we calculate the transmission power maximizing the energy efficiency for all possible modes of each device. Although the proposed power cannot maximize the system capacity, we prove that the proposed transmission power is the optimal power which maximizes the energy efficiency. In the second step, we select a mode which has the maximal energy efficiency among all possible mode combinations of the devices. Then we can jointly obtain the transmission power and the mode which can maximize the energy efficiency. The proposed scheme has the optimal performance with respect to the energy efficiency and outperforms the conventional schemes.

• Transactions on Electrical and Electronic Materials
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• v.18 no.2
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• pp.70-73
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• 2017

We investigated n-i-p type single junction hydrogenated amorphous silicon oxide solar cells. These cells were without front surface texture or back reflector. Maximum power point efficiency of these cells showed that an optimized device structure is needed to get the best device output. This depends on the thickness and defect density ($N_d$) of the active layer. A typical 10% photovoltaic device conversion efficiency was obtained with a $N_d=8.86{\times}10^{15}cm^{-3}$ defect density and 630 nm active layer thickness. Our investigation suggests a correlation between defect density and active layer thickness to device efficiency. We found that amorphous silicon solar cell efficiency can be improved to well above 10%.

• IEMEK Journal of Embedded Systems and Applications
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• v.18 no.1
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• pp.9-17
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• 2023

This paper relates to the development of a device for measuring the efficiency of a solar panel based on a variable constant current, and proposed a standard for reuse of the solar panel. By applying a variable constant current circuit to a solar panel efficiency measuring device, it was easy to apply a maximum power point tracking (MPPT) algorithm. In addition, a load dispersion method was applied to measure the efficiency of a high-capacity solar panel. and it is possible to solve a problematic thermal runaway during a MOSFET parallel operation by applying the load dispersion method. As a result of the experiment, the solar panel efficiency measuring device was able to accommodate a large solar panel of 350W, which is the maximum measurement goal. In this paper, the validity was confirmed through the 310W solar panel efficiency measurement experiment collected after removal.

• Journal of Biosystems Engineering
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• v.41 no.1
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• pp.21-33
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• 2016

Purpose: In order to ensure that vegetable seedlings (with a soil block around their roots) are planted in an upright orientation after metering in a vegetable transplanter, they need to be dropped freely from a certain height. The walk-behind hand-tractor-powered machines do not have sufficient space to drop the seedlings from that height. In the present work, a hopper-type planting device was developed for the walk-behind hand-tractor-powered vegetable transplanter to ensure that the soil block seedlings are planted in an upright orientation. Methods: Various dimensionless terms were developed based on the dimensional analysis approach, and their effect on the planting of soil block seedlings in an upright orientation (planting efficiency) was studied. The optimum design dimensions of the hopper-type planting device were identified by the Taguchi method of optimization. Results: The ratio of the height of free fall to the sliding distance of the seedling on the surface of the hopper had the highest influence on planting efficiency. The planting efficiency was highest for plants with a height $15{\pm}2cm$. The plant handling Froude number, in interaction with the design of the hopper-type planting device, also significantly affected the planting efficiency. Of the hopper design factors, the length of the slide of the seedlings on the surface of the hopper was most important, and induced sufficient velocity and rotation to cause the seedling to fall in an upright orientation. An evaluation of the performance of the planting device under actual field conditions revealed that the planting efficiency of the developed planting device was more than 97.5%. Conclusions: As the seedlings were fed to the metering device manually, an increase in planting rate increased missed plantings. The planting device can be adopted for any vegetable transplanter in which the seedlings are allowed to drop freely from the metering device.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.11
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• pp.1566-1570
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• 2013

In this paper, we analyzed the electric characteristics of the OLEDs device of which anode ITO has been treated with the oxygen plasma. We fabricated the basic three-layer structure (ITO / AF / $Alq_3$ / $Cs_2CO_3$ / Al) device, analyzed how the oxygen plasma treatments of the ITO surface affects to the electrical characteristics of OLEDs. We also produced a four-layer structure device (ITO / AF / TPD / $Alq_3$ / $Cs_2CO_3$ / Al) with the oxygen plasma treatment. From the comparative analysis to the devices, we confirmed following results. The three-layer structure OLEDs device with oxygen plasma treatment has better characteristics than the device without the treatments; maximum luminance, luminous efficiency, and external quantum efficiency are improved approximately 151 [%], 126 [%], and 175[%], respectively. Also, the electric characteristics of the four-layer structure device with oxygen plasma treatment are improved comparing to the characteristics of the three-layer structure device with oxygen plasma treatment; maximum luminance, luminous efficiency, and external quantum efficiency are improved approximately 144 [%], 115 [%], and 124[%], respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.88-88
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• 2012

High efficiency thin film photovoltaic device technology is reviewed. At present market situation, the industrial players of thin film technologies have to confront the great recession and need to change their market strategies and find technical alternatives again. Most recent technology trends and technical or industrial progress for Silicon thin film and CIGS are introduced and common interests for high efficiency and reliability are discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.428-430
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• 2008

We demonstrated high power efficiency and long lifetime for organic light-emitting diode (OLED) using a new electron transport material (ETM-1). A power efficiency of the device with ETM-1 was improved compared to a standard device using tris(8-hydroxy-quinolinate)aluminum ($Alq_3$). Moreover, the lifetime was 4 times longer than the standard device.

• Transactions on Electrical and Electronic Materials
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• v.6 no.1
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• pp.25-28
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• 2005

We have investigated the effects of hole-injection buffer layer in organic light-emitting diodes using poly(3,4-ethylenedioxythiophene):poly(stylenesulfonate)(PEDOT:PSS) in a device structure of $ITO/PEDOT:PSS/TPD/Alq_{3}/cathode$. Polymer PEDOT:PSS buffer layer was made by spin casting method. Current-voltage, luminance-voltage characteristics and efficiency of device were measured at room temperature with a variation of cathode materials; Al, LiF/Al, LiAl, and Ca/Al. The device with LiF/Al cathode shows an improvement of external quantum efficiency approximately by a factor of ten compared to that of Al cathode only device. Our observation shows that cathode is important in improving the efficiency of the organic light-emitting diodes.

• ETRI Journal
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• v.18 no.3
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• pp.181-193
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• 1996

A blue light emitting device has been successfully fabricated using a polymer with regulated conjugation length containing trimethylsilyl substituted phenylenevinylene units. Electroluminescence from the device has an emission maximum at 470 nm. The device shows typical diode characteristics with operating voltage of 20 V and the light becomes visible at a current density of less than $0.5;mA/cm^2$. The electroluminescence spectrum is virtually identical with the photoluminescence spectrum, indicating that the radiation mechanisms are the same for both. A light emitting device using the blend of a large band gap polymer and a small band gap polymer was also fabricated. Light emission from the small band gap polymer shows much improved quantum efficiency, but there is no light emission from the large band gap polymer. Quantum efficiency of the blend increases up to about two orders of magnitude greater than that of the small band gap polymer with increasing proportion of the large band gap polymer. The improvement in quantum efficiency is interpreted in terms of exciton transfer and the hole blocking behaviour of the large band gap polymer. Finally, we have fabricated a patterned flexible light emitting device using the high quantum efficiency polymer blend system.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.193-197
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• 2012

Oxygen plasma has been treated on the surface of indium-tin-oxide (ITO) to improve the efficiency of the organic light-emitting diodes (OLEDs) device. The plasma treatment was expected to inject the holes effectively due to the control of an ITO work-function and the reduction of surface roughness. To optimize the treatment condition, a surface resistance and morphology of the ITO surface were investigated. The effect on the electrical properties of the OLEDs was evaluated as a function of oxygen plasma powers (0, 200, 250, 300, and 450 W). The electrical properties of the devices were measured in a device structure of ITO/TPD/Alq3/BCP/LiF/Al. It was found the plasma treatment of the ITO surface affects on the efficiency of the device. The efficiency of the device was optimized at the plasma power of 250 W and decreased at higher power than 250 W. The maximum values of luminance, luminous power efficiency, and external quantum efficiency of the plasma treated devices increase by 1.4 times, 1.4 times, and 1.2 times, respectively, compared to those of the non-treated ones.