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http://dx.doi.org/10.4313/TEEM.2005.6.1.025

Effects of PEDOT:PSS Buffer Layer in a Device Structure of ITO/PEDOT:PSS/TPD/Alq3/Cathode  

Ahn, Joon-Ho (Department of Electrical Engineering, Kwangwoon University)
Lee, Joon-Ung (Department of Electrical Engineering, Kwangwoon University)
Publication Information
Transactions on Electrical and Electronic Materials / v.6, no.1, 2005 , pp. 25-28 More about this Journal
Abstract
We have investigated the effects of hole-injection buffer layer in organic light-emitting diodes using poly(3,4-ethylenedioxythiophene):poly(stylenesulfonate)(PEDOT:PSS) in a device structure of $ITO/PEDOT:PSS/TPD/Alq_{3}/cathode$. Polymer PEDOT:PSS buffer layer was made by spin casting method. Current-voltage, luminance-voltage characteristics and efficiency of device were measured at room temperature with a variation of cathode materials; Al, LiF/Al, LiAl, and Ca/Al. The device with LiF/Al cathode shows an improvement of external quantum efficiency approximately by a factor of ten compared to that of Al cathode only device. Our observation shows that cathode is important in improving the efficiency of the organic light-emitting diodes.
Keywords
Organic light-emitting diodes; Hole-injection buffer layer; External quantum efficiency;
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