• 센서학회지
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• 제29권5호
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• pp.328-331
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• 2020

In this study, a highly crystalline SnO₂ thin film was formed using a sol-gel process. In addition, a SnO₂ thin-film transistor was successfully fabricated. The fabricated SnO₂ thin-film transistor exhibited conventional n-type semiconductor properties, with a mobility of 0.1 cm² V^-1 s^-1, an on/off current ratio of 1.2 × 10⁵, and a subthreshold swing of 2.69. The formed SnO₂ had a larger bandgap (3.95 eV) owing to the bandgap broadening effect. The fabricated photosensor exhibited a responsivity of 1.4 × 10^-6 Jones, gain of 1.43 × 10⁷, detectivity of 2.75 × 10^-6 cm Hz^1/2 W^-1, and photosensitivity of 4.67 × 10².

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.171-172
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• 2008

$(Ba_{0.57}Sr_{0.33}Ca_{0.10})TiO_3$ (BSCT) thick films doped with 0.1 mol% $MnCO_3$ and $Yb_2O_3$ ($0.1{\sim}0.7$ mol%) were fabricated by the screen printing method on the alumina substrate. And the structural and electrical properties as a function of $Yb_2O_3$ amount were investigated. The lattice constants of the BSCT thick film doped with 0.1 mol% is 0.3955 nm. The specimen doped with 0.7 mol% $Yb_2O_3$ showed dense and uniform grains with diameters of about 6.3 mm. The thickness of all BSCT thick films was approximately 60 mm. The Curie temperature of the BSCT specimen doped with 0.1 mol% $Yb_2O_3$ was $18^{\circ}C$, and the dielectric constantand dielectric loss at this temperature was 4637 and 4.2%, respectively. The BSCT specimen doped with 0.1 mol% $Yb_2O_3$ showed the maximum value of $349{\times}10^{-9}C/cm^2K$ at Curie temperature. The figure of merit $F_D$ for specific detectivity of the specimens doped with 0.1 mol% $Yb_2O_3$ showed the highest value of $10.9{\times}10^{-9}Ccm/J$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 추계학술대회 논문집 학회본부
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• pp.91-93
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• 1989

x $Pb(Sb_{1/2}Sn_{1/2})O_3-PbTiO_3-PbZrO_3$, (0.05$\leq$x$\leq$0.30) ternary compound ceramics were fabricated by the mixed oxide method. The sintering temperature and time were $1200{\sim}1300[^{\circ}C]$, 2 hour, respectively. Increasing the PSS contents, the transition temperatures were decreased. The relative dielectric constant and Curie temperature of the 0.30PSS-0.20PT-0.50PZ specimens were 372, 190[$^{\circ}C$]. The pyroelectric coefficient, figure of merits for pyroelectric current and detectivity of the 0.25PSS-0.25PT-0.50PZ specimens had the good values, $5.41{\times}10^{-8}[C/cm^{2}K]$, $27.72{\times}10^{-12}[Ccm/J]$, $7.65{\times}10^{-10}{Ccm/J]$, respectively.

• 전자공학회논문지D
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• 제35D권4호
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• pp.93-100
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• 1998

Pyoelectric infrared detectors based on La-modified PbTiO3 (PLT) thin films have been fabricated by RF magnetron sputtering and micromachining technology. The detectors form Pb$_{1-x}$ La$_{x}$Ti$_{1-x}$ O$_{3}$ (x=0.05) thin film ferroelectric capacitors epitaxially grown by RF magnetron sputtering on Pt/MgO (100) substrate. The sputtered PLT thin film exhibits highly c-axis oriented crystal struture that no poling trealization for sensing applications is required. This is an essential factor to increase the yield for realization of an infrared image sensor. Micromachining technology is used to lower the thermal mass of the detector by giving maximum sensor efficiency. Polyimide is coated on top of the sensing elements to support the fragile structure and the backside of the MgO substrate is selectively eteched to reduce the heat loss. The sensing element exhibited a very high detectivity D* of 8.5*10$^{8}$ cm..root.Hz/W at room temperature and it is about 100 times higher than the case of micromachining technology is not used. a sensing system that detects the position as well as the existence of a human body is realized using the array sensor.sor.

• 센서학회지
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• 제17권1호
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• pp.75-80
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• 2008

In this work, we optimized a microbolometer for application of a $CO_2$ detector by using MEMS technology. We fabricated a stable thermal isolation structure by varying the lengths of supporting legs which affect bolometer performance. We could fabricate more stable thermal isolation structure for the microbolometer through the results of ANSYS simulations, and minimize the fabrication processes by using bulk micromachining to use a $CO_2$ detector. The microbolometer shows a detectivity of $2.5{\times}109$ cmHz$^{1/2}$/W at a chopper frequency of 8 Hz and a bias current of $6.25\;{\mu}A$ with a vacuum package of about $3.0{\times}10.3$ torr. Therefore, we put to conclusion that the microbolometer optimized in this experiment could be useful for the application of a $CO_2$ detector.

• 한국전기전자재료학회논문지
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• 제22권3호
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• pp.222-229
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• 2009

A noble infrared sensor was studied for passenger conditional detection in vehicle, This research relates to uncooled infrared sensors for detecting the presence, type and temperature of occupants in vehicle. It sense that the occupants purpose to control the smart airbag for safety in the case of adult or child and to control the automatic air conditioning for convenience. This paper described the design and the fabrication of microbolometers which were composed of 2 by 8 elements using the surface micromachining technology. The characteristics of the array were investigated in the spectral region of $8{\sim}12{\mu}m$. The fabricated detectors exhibited the thermal mass of $7.05{\times}10^{-9}\;J/K$, the thermal conductance of $1.03{\times}10^{-6}\;W/K$, the thermal time constant of 6.8 ms, the responsivity of $2.96{\times}10^4\;V/W$ and the detectivity of $1.01{\times}10^9\;cmHz^{1/2}/W$, at the chopper frequency of 10 Hz and the bias current of $4.4{\mu}A$. We could successfully detect the human body condition in the divided zone. As a results, we concluded that microbolometer optimized in this research could be useful for the application of passenger conditional detection in vehicle.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.46-50
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• 1996

In this paper, xPb(Zn$\_$1/3/Nb$\_$2/3/)O$_3$-yPbTiO$_3$-zPbZrO$_3$-zPbZrO$_3$ (0.5wt%)MnO$_2$ ceramics were fabricated by the mixed oxide method sintered at 1250$^{\circ}C$ for 2[hrs] and then the dielectric and pyroelectric properties were investigated. In 0.10PZN-0.45PT-0.47PZ sample, dielectric constant was 829 and in the case of 01.5PZN-0.45PT-0.40PZ sample, pyroelectric current and pyroelectric coefficient were 0.95 x 10$\^$-7/ [A] and 7.6 x 10$\^$-1/ [C/$\textrm{cm}^2$$.$$^{\circ}C$]. Figure of merits of pyroelectric current and voltage and detectivity, in same sample, has shown good properties, that were 2.4 x 10$\^$-8/[C$.$cm/J], 5.5 x 10$\^$-11/[C$.$cm/J], 1.6 x 10$\^$-8/ [C$.$cm/J].

• 센서학회지
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• 제18권4호
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• pp.301-306
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• 2009

This paper describes the design and fabrication of 16$\times$16 microbolometer infrared focal plane arrays based on iMEMS technology. Amorphous silicon was used for infrared-sensitive material, and it showed the resistance of 18 Mohm and the temperature coefficient of resistivity of -2.4 %. The fabricated sensors exhibited responsivity of 78 kV/W and thermal time constant of 8.0 msec at a bias voltage of 0.5 V. The array performances had satisfactory uniformity less than 5 % within one-sigma. Also, 1/f noise of pixel was measured and the noise factor of $6\times10^{-11}$ was extracted. Finally, we obtained detectivity of $1.27\times10^9cmHz^{0.5}/W$ and noise equivalent temperature difference of 200 mK at a frame rate of 30 Hz.

• 세라미스트
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• 제22권1호
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• pp.36-55
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• 2019

Atomically thin two-dimensional (2D) nanomaterials, including transition metal dichalcogenides (TMDs), graphene, boron nitride, and black phosphorus, have opened up new opportunities for the next generation optoelectronics owing to their unique properties such as high absorbance coefficient, high carrier mobility, tunable band gap, strong light-matter interaction, and flexibility. In this review, photodetectors based on 2D nanomaterials are classified with respect to critical element technology (e.g., active channel, contact, interface, and passivation). We discuss key ideas for improving the performance of the 2D photodetectors. In addition, figure-of-merits (responsivity, detectivity, response speed, and wavelength spectrum range) are compared to evaluate the performance of diverse 2D photodetectors. In order to achieve highly reliable 2D photodetectors, in-depth studies on material synthesis, device structure, and integration process are still essential. We hope that this review article is able to render the inspiration for the breakthrough of the 2D photodetector research field.

• Transactions on Electrical and Electronic Materials
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• 제6권3호
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• pp.119-123
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• 2005

$0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3$ specimens doped with $ MnO_2\;(0.18\;mol\%)$ and $Y_2O_3\;(0\~0.4\;wt\%)$ were fabricated by the mixed-oxide method. All specimens showed the typical XRD patterns of a perovskite polycrystalline structure and the lattice constant decreased with increasing amount of $Y_2O_3$. The relative dielectric constant and the dielectric loss of the specimens doped with $0.2\;wt\%\;Y_2O_3$ were 704 and 0.0201, respectively. The remanent polarization, the coercive field and the pyroelectric coefficient of the specimen doped with $0.2\;wt\%\;Y_2O_3$ were $10.88\times10^{-2}Cm^{-2},\;11.12\times10^2kVm^{-1}$ and $5.03\times10^{-4}Cm^{-2}K^{-1}$ at $25^{\circ}C$, respectively. The figures of merit, $F_V$ for the voltage responsivity and $F_D$ for the specific detectivity, of the specimen doped with $0.2\;wt\%\;Y_2O_3$ were the good values of $3.04\times10^{-2}\;m^2C^{-1}\;and\;1.50\times10^{-5}\;Pa^{-1/2}$, respectively.