• Proceedings of the KIEE Conference
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• 2005.07b
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• pp.1294-1296
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• 2005

Because of its cost effectiveness, the Brushless DC Motor(BLDCM) is focused by the industry these days. Considering the constant back-EMF region of the BLDCM, only a simple position information should be provided for constant torque control. From this point of view, using expensive position sensors, such as encoder, resolver, etc, decreases the cost effectiveness of the BLDCM. The Proposed detecting circuit detects position of zero crossing point(ZCP) then relative position could be calculated from ZCP. This circuit is robust to noise because of working in the current level. BLDCM is driven from the position information by the ZCP The reliability on BLDCM sensorless control using the voltage detecting circuit is shown through simulation using Matlab.

• Journal of Powder Materials
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• v.19 no.4
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• pp.297-303
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• 2012

In this study, voltammetry system for realizing high sensitivity nano-labeled sensor of detecting heavy metals was designed, and optimal system operating conditions were determined. High precision digital to analog converter (DAC) circuit was designed to control applied unit voltage at working electrode and analog to digital converter (ADC) circuit was designed to measure the current range of $0.1{\sim}1000{\mu}A$ at counter electrode. Main control unit (MCU) circuit for controlling voltammetry system with 150 MHz clock speed, main memory circuit for the mathematical operation processing of the measured current value and independent power circuit for analog/digital circuit parts to reduce various noise were designed. From result of voltammetry system operation, oxidation current peaks which are proportional to the concentrations of Zn, Cd and Pb ions were found at each oxidation potential with high precision.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.431-438
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• 2005

In this paper, we propose the built-in current testing circuit for improving reliability As the integrated CMOS circuits in a chip are increased, the testability on design and fabrication should be considered to reduce the cost of testing and to guarantee the reliability In addition, the high degree of integration makes more failures which are different from conventional static failures and introduced by the short between transistor nodes and the bridging fault. The proposed built-in current testing method is useful for detecting not only these failures but also low current level failures and faster than conventional method. In normal mode, the detecting circuit is turned off to eliminate the degradation of CUT(Circuits Under Testing). The differential input stage in detecting circuit prevents the degradation of CUT in test mode. It is expected that this circuit improves the quality of semiconductor products, the reliability and the testability.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.703-706
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• 1998

This paper presents an efficient substrate-bias generator(SBG)for low-power, high-density DRAM's The proposed SBG can supply stable voltage with switching the supply voltage of driving circuit, and it can substitude the small capacitance for the large capacitance. The charge pumping circuit of the SBG suffere no VT loss and is to be applicable to low-voltage DRAM's. Also it can reduce the power consumption to make VBB because of it's high pumping efficiency. Using biasing voltage with positive temperature coefficient, VBB level detecting circuit can detect constant value of VBB against temperature variation. VBB level during VBB maintaining period varies 0.19% and the power dissipation during this period is 0.16mw. Charge pumping circuit can make VBB level up to -1.47V using VCC-1.5V, and do charge pumping operation one and half faster than the conventional ones. The temperature dependency of the VBB level detecting circuit is 0.34%. Therefore the proposed SBG is expected to supply a stable VBB with less power consumption when it is used in low power DRAM's.

• Journal of information and communication convergence engineering
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• v.6 no.1
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• pp.43-46
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• 2008

This paper proposes an advanced test circuit for detecting the connectivity between a drum ring of laser printer and PCB. The detection circuit of charge sharing is proposed, which minimizes the influences of internal parasitic capacitances. The test circuit is composed of precharge circuit, analog comparator, level shifter. Its functional operation is verified using $0.6{\mu}m$ 3.3V/40V CMOS process parameter by HSPICE. Access time is100ns. Layout of the drum contact test circuit is $465{\mu}m\;{\times}\;117{\mu}m$.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.767-769
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• 1998

Using the R/V converting circuit, hydrogen detecting characteristics of the $WO_3$ films were investigated. The R/V converting circuit is configured with the equivalently constant current driving method connecting an unknown resistor to be measured in the feedback loop of the or-amr rather than using a separated constant current circuit. The response time of the reference voltage for the R/V converting circuit was simulated by the circuit simulator "SABER", and it was found that the response time in the high resistance range become longer and the error amounts to 10%. From the simulation results. replacing the capacitor in the feedback loop of the second stage or-amp with a 0.001uF capacitor, when measuring in the high resistance range, the response characteristics are remarkably improved. The response time was shortened from about 10 seconds to below 1 second. Using this circuit, the effect of $WO_3$ films deposited by sputtering method on hydrogen was measured.

• 전기의세계
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• v.25 no.4
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• pp.59-62
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• 1976

This study on the characteristics of the leakage circuit breakers handles the rolls of each itemized parts of the mentioned apparatus and their influence in determining of the characteristic curve of leakage circuit breaker. Furthermore the differential current transforms in the mentioned apparatus for detecting the fault is handled as a heavy point.

• Journal of IKEEE
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• v.24 no.1
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• pp.132-139
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• 2020

The ionizer module used in this air cleaner supplies high voltages of 3.5KV / -4KV to the discharge electrode HV+ / HV- using a winding transformer to generate positive and negative ions by electric field radiation of carbon fiber brush. The ionizer module circuit using the existing MCU has the disadvantage of large PCB size and expensive price, and the gate driver chip using the existing ring oscillator has oscillation period sensitive to PVT (Process-Voltage-Temperature) fluctuation and there is risk of fire or electric shock because there is no fault detection function by short circuit of HV+ and GND as well as HV- and GND. Therefore, in this paper, even though PVT fluctuates, by using 7-bit binary up counter, HV+ voltage reaches the target voltage by adjusting oscillation period. And an HV+ short fault detection circuit for detecting a short circuit between HV+ and GND, an HV- short fault detection circuit for detecting a short circuit between HV- and GND, and an OVP (Over-Voltage Protection) for detecting that HV+ rises above an overvoltage are newly proposed.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.530-533
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• 1998

In this paper, a new scheme of a boosted voltage generator (BVG) is designed for low powr DRAM's. The designed BVG can supply stable $V_{pp}$ using a new circuit operting method. This method controls charge pumping capability by switching the supply voltage and ring oscillator frequency of driving circuit, so the BVG can save area and reduce the powr dissipation during $V_{pp}$ maintaining period. The charge pumping circuit of the BVG suffers no $V_{T}$ loss and is to be applicable to low-voltage DRAM's. $V_{pp}$ level detecting circuit can detect constant value of $V_{pp}$ against temperature variation. The level of $V_{pp}$ varies -0.55%~0.098% during its maintaining period. Charge pumping circuit can make $V_{pp}$ level up to 2.95V with $V_{cc}$ =1.5V. The degecting level of $V_{pp}$ level detecting circuit changes -0.34% ~ 0.01% as temperature varies from -20 to 80.deg. C. The powr dissipation during V.$_{pp}$ maintaining period is 4.1mW.W.1mW.

• Fire Protection Technology
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• s.28
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• pp.48-54
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• 2000

The technique detects radiant energy form a flaming fire of fuels contained carbonaceous material can be applied to fast growing fires. This technique applied detectors are ultimately effective when early detecting fire alarm system is required or the smoke and heat detectors can not applied. In Korea Fire regulation, a flame detector should be install in case that the installation height is higher than 20[m], chemical plant, hangar refinery. Therefore it is really necessary that a flame detector has to be developed as soon as possible. With foundation technique of flame detector, ideal sensing element and stable circuit design, a trial UV flame detector is manufactured. The stable and reliable technique of flame detector is established through the repeateed perfomance test and modification. An early detecting fire alarm device is developed through the modification, supplement of the structure and circuit. Results of the R & D for the manufacture of an excellent flame detecting device is carried out with the establishment of technique for the mass production and the qualified manufacturing process.