• Korean Journal of Materials Research
• /
• v.11 no.2
• /
• pp.71-75
• /
• 2001

The reaction stability of nickel with side-wall materials of SiO$_2$ and Si$_3$N$_4$ on p-type 4"(100) Si substrate were investigated. Ni on 1300 $\AA$ thick SiO$_2$ and 500 $\AA$ - thick Si$_3$N$_4$ were deposited. Then the samples were annealed at 400, 500, 750 and 100$0^{\circ}C$ for 30min, and the residual Ni layer was removed by a wet process. The interface reaction stability was probed by AES depth Profiling. No reaction was observed at the Ni/SiO$_2$ and Ni/Si$_3$N$_4$, interfaces at 400 and 50$0^{\circ}C$. At 75$0^{\circ}C$, no reaction occurred at Ni/SiO$_2$ interface, while $NiO_x$ and Si$_3$N$_4$ interdiffused at Ni/Si$_3$N$_4$ interface. At 100$0^{\circ}C$, Ni layers on SiO$_2$ and Si$_3$N$_4$ oxidized into $NiO_x$ and then $NiO_x$ interacted with side-wall materials. Once $NiO_x$ was formed, it was not removed in wet etching process and easily diffused into sidewall materials, which could lead to bridge effect of gate-source/drain.

• The Journal of Engineering Geology
• /
• v.9 no.1
• /
• pp.59-68
• /
• 1999

To clarify the geological structure of Yangsan fault around Sangchon-ri in the southern part of Kyungsang Basin the resistivity (dipole-dipole profiling) and VLF surveys carried out on the four profiles, crossing the inferred trace of the fault. The resistivity contrast across the fault is clearly shown on the profiles: higher resistivity and lower resistivity on the east and west, respectively. It is most likely from the uplift of the granitic bedrock on the east park due to the strike-fault raulting with vertical movement. The zero-crossing points of VLF anomalies, associated with near-surface fracture zone, are found to well correlate with the resistivity boundaries from the dipole-dipole profiling. Consequently, southern segment of Yangsan fault (at Sangchon-ri area) is interpreted to be vertically developed strike-slip fault with a difference more than 10m depth of basement rock at both sides.

• Genomics & Informatics
• /
• v.15 no.1
• /
• pp.28-37
• /
• 2017

Obesity is a highly prevalent, chronic disorder that has been increasing in incidence in young patients. Both epigenetic and genetic aberrations may play a role in the pathogenesis of obesity. Therefore, in-depth epigenomic and genomic analyses will advance our understanding of the detailed molecular mechanisms underlying obesity and aid in the selection of potential biomarkers for obesity in youth. Here, we performed microarray-based DNA methylation and gene expression profiling of peripheral white blood cells obtained from six young, obese individuals and six healthy controls. We observed that the hierarchical clustering of DNA methylation, but not gene expression, clearly segregates the obese individuals from the controls, suggesting that the metabolic disturbance that occurs as a result of obesity at a young age may affect the DNA methylation of peripheral blood cells without accompanying transcriptional changes. To examine the genome-wide differences in the DNA methylation profiles of young obese and control individuals, we identified differentially methylated CpG sites and investigated their genomic and epigenomic contexts. The aberrant DNA methylation patterns in obese individuals can be summarized as relative gains and losses of DNA methylation in gene promoters and gene bodies, respectively. We also observed that the CpG islands of obese individuals are more susceptible to DNA methylation compared to controls. Our pilot study suggests that the genome-wide aberrant DNA methylation patterns of obese individuals may advance not only our understanding of the epigenomic pathogenesis but also early screening of obesity in youth.

• Nuclear Engineering and Technology
• /
• v.54 no.8
• /
• pp.3027-3033
• /
• 2022

Background: In this study, various types of deep-learning models for predicting in vitro radiosensitivity from gene-expression profiling were compared. Methods: The clonogenic surviving fractions at 2 Gy from previous publications and microarray gene-expression data from the National Cancer Institute-60 cell lines were used to measure the radiosensitivity. Seven different prediction models including three distinct multi-layered perceptrons (MLP), four different convolutional neural networks (CNN) were compared. Folded cross-validation was applied to train and evaluate model performance. The criteria for correct prediction were absolute error < 0.02 or relative error < 10%. The models were compared in terms of prediction accuracy, training time per epoch, training fluctuations, and required calculation resources. Results: The strength of MLP-based models was their fast initial convergence and short training time per epoch. They represented significantly different prediction accuracy depending on the model configuration. The CNN-based models showed relatively high prediction accuracy, low training fluctuations, and a relatively small increase in the memory requirement as the model deepens. Conclusion: Our findings suggest that a CNN-based model with moderate depth would be appropriate when the prediction accuracy is important, and a shallow MLP-based model can be recommended when either the training resources or time are limited.

• Journal of the Korean Geophysical Society
• /
• v.2 no.3
• /
• pp.209-216
• /
• 1999

In order to get geologic information necessary for underground installation of water pipe, seismic refraction profiling was applied to the southwest side of the Seomjin River which flows between Namwon-gun, Cholabuk-do and Gokseong-gun, Cholanam-do. Before obtaining the in-line refraction data, walkaway data were recorded with 1 m geophone interval and -36∼+36 m offset range. From the walkaway data, it is interpreted that a dry soil layer with the average velocity of 585 m/s covers wet sediments with the average velocity of 1,326 m/s. The second layer overlies basements nearly horizontally with the average velocity of 4,218 m/s. Refraction profiling of 220 m long with the geophone interval of 2 m is interpreted with the Generalized Reciprocal Method (GRM). Three layers are identified with average velocities of 688 m/s, 1,473 m/s, and 3,776 m/s, respectively. The depth to the bedrock impossible for ripping ranges between two extremes, 1.51∼2.43 m and 2.25∼3.54 m, depending upon thickness of the hidden layer. A typical shortcoming of refraction method, the hidden layer problem, prevents accurate estimation in depth of the second layer.

• Current Photovoltaic Research
• /
• v.4 no.1
• /
• pp.21-24
• /
• 2016

Chalcopyrite based (CIGS) thin films have considered to be a promising candidates for industrial applications. The growth of quality CIGS thin films without secondary phases is very important for further efficiency improvements. But, the identification of complex secondary phases present in the entire film is crucial issue due to the lack of powerful characterization tools. Even though X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and normal Raman spectroscopy provide the information about the secondary phases, they provide insufficient information because of their resolution problem and complexity in analyzation. Among the above tools, a normal Raman spectroscopy is better for analysis of secondary phases. However, Raman signal provide the information in 300 nm depth of film even the thickness of film is > $1{\mu}m$. For this reason, the information from Raman spectroscopy can't represent the properties of whole film. In this regard, the authors introduce a new way for identification of secondary phases in CIGS film using depth Raman analysis. The CIGS thin films were prepared using DC-sputtering followed by selenization process in 10 min time under $1{\times}10^{-3}torr$ pressure. As-prepared films were polished using a dimple grinder which expanded the $2{\mu}m$ thick films into about 1mm that is more than enough to resolve the depth distribution. Raman analysis indicated that the CIGS film showed different secondary phases such as, $CuIn_3Se_5$, $CuInSe_2$, InSe and CuSe, presented in different depths of the film whereas XPS gave complex information about the phases. Therefore, the present work emphasized that the Raman depth profile tool is more efficient for identification of secondary phases in CIGS thin film.

• Genomics & Informatics
• /
• v.10 no.1
• /
• pp.1-8
• /
• 2012

Recently, the technologies of DNA sequence variation and gene expression profiling have been used widely as approaches in the expertise of genome biology and genetics. The application to genome study has been particularly developed with the introduction of the nextgeneration DNA sequencer (NGS) Roche/454 and Illumina/ Solexa systems, along with bioinformation analysis technologies of whole-genome $de$ $novo$ assembly, expression profiling, DNA variation discovery, and genotyping. Both massive whole-genome shotgun paired-end sequencing and mate paired-end sequencing data are important steps for constructing $de$ $novo$ assembly of novel genome sequencing data. It is necessary to have DNA sequence information from a multiplatform NGS with at least $2{\times}$ and $30{\times}$ depth sequence of genome coverage using Roche/454 and Illumina/Solexa, respectively, for effective an way of de novo assembly. Massive shortlength reading data from the Illumina/Solexa system is enough to discover DNA variation, resulting in reducing the cost of DNA sequencing. Whole-genome expression profile data are useful to approach genome system biology with quantification of expressed RNAs from a wholegenome transcriptome, depending on the tissue samples. The hybrid mRNA sequences from Rohce/454 and Illumina/Solexa are more powerful to find novel genes through $de$ $novo$ assembly in any whole-genome sequenced species. The $20{\times}$ and $50{\times}$ coverage of the estimated transcriptome sequences using Roche/454 and Illumina/Solexa, respectively, is effective to create novel expressed reference sequences. However, only an average $30{\times}$ coverage of a transcriptome with short read sequences of Illumina/Solexa is enough to check expression quantification, compared to the reference expressed sequence tag sequence.

• Fire Science and Engineering
• /
• v.22 no.5
• /
• pp.43-47
• /
• 2008

Recently SIMS has attracted interest as new technique to distinguish the primary and the secondary arc beads. A Cs+ primary ion beam was used to detect the $^{12}C^-$, $^{63}Cu^-$, $^{18}O^-$, $^{35}Cl^-$ secondary ions which are formed during depth profiles in the copper wires. In this work, we studied thermal diffusion in the copper wire which are occurred with supplying over-current. The results demonstrated that Carbon and Chloride are diffused in PVC-coated copper wire deeper than none PVC-coated. However Oxygen showed the reverse diffusion property.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2018.06a
• /
• pp.43.1-43.1
• /
• 2018

Spatial distribution of binding state in depth direction is investigated in a hard skin layer on soft polydimethylsiloxane (PDMS) fabricated by Ar ion beam irradiations. The hard skin layer known as a silica-like homogenous layer was composed of two layers. Impinging Ar ions transfer energy to PDMS as a function of collisional energy transfer rate, which is the maximum at surface and decreases gradually as an ion penetrates. This formed the heterogeneous hard skin layer that consists of a top-most layer and an intermediate layer. XPS depth profiling showed the existence of the top-most layer and intermediate layer. In the top-most layer, scission and cross-linking were occurred simultaneously and Si-O bond showed dissociated status, SiOx (x = 1.25 - 1.5). Under the top-most layer, there was the intermediate layer in which cross-linking is mainly occurred and Si-O bond showed silica-like binding status, SiOx (x = 1.75 - 2). And theoretical analysis which calculates the collisional energy transfer and a displacement per atom explained the thickness variation of top-most layer according to Ar ion energy from 360 eV to 840 eV.

• Journal of the Korean institute of surface engineering
• /
• v.52 no.6
• /
• pp.342-349
• /
• 2019

Titanium nitride(TiN) thin films have been deposited on PEN(Polyethylene naphthalate) substrate by reactive RF(13.56 MHz) magnetron sputtering in a 25% N₂/Ar mixed gas atmosphere. The pulsed DC bias voltage of -50V on substrates was applied with a frequency of 350 kHz, and duty ratio of 40%(1.1 ㎲). The effects of pulsed DC substrate bias voltage on the crystallinity, color, electrical properties of TiN_x films have been investigated using XRD, SEM, XPS and measurement of the electrical properties such as electrical conductivity, carrier concentration, mobility. The deposition rates of TiN_x films was decreased with application of the pulsed DC substrate bias voltage. The TiN_x films deposited without and with pulsed bias of -50V to substrate exhibits gray and gold colors, respectively. XPS depth profiling revealed that the introduction of the substrate bias voltage resulted in decreasing oxygen concentration in TiN_x films, and increasing the electrical conductivities, carrier concentration, and mobility to about 10 times, 5 times, and 2 times degree, respectively.