• 한국재료학회지
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• 제11권2호
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• pp.71-75
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• 2001

The reaction stability of nickel with side-wall materials of SiO$_2$ and Si$_3$N$_4$ on p-type 4"(100) Si substrate were investigated. Ni on 1300 $\AA$ thick SiO$_2$ and 500 $\AA$ - thick Si$_3$N$_4$ were deposited. Then the samples were annealed at 400, 500, 750 and 100$0^{\circ}C$ for 30min, and the residual Ni layer was removed by a wet process. The interface reaction stability was probed by AES depth Profiling. No reaction was observed at the Ni/SiO$_2$ and Ni/Si$_3$N$_4$, interfaces at 400 and 50$0^{\circ}C$. At 75$0^{\circ}C$, no reaction occurred at Ni/SiO$_2$ interface, while $NiO_x$ and Si$_3$N$_4$ interdiffused at Ni/Si$_3$N$_4$ interface. At 100$0^{\circ}C$, Ni layers on SiO$_2$ and Si$_3$N$_4$ oxidized into $NiO_x$ and then $NiO_x$ interacted with side-wall materials. Once $NiO_x$ was formed, it was not removed in wet etching process and easily diffused into sidewall materials, which could lead to bridge effect of gate-source/drain.

• 지질공학
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• 제9권1호
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• pp.59-68
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• 1999

단층의 존재 가능성과 파쇄대에 대한 지전기적 구조를 밝히기 위하여 양산단층 남부 상천리 지역에 대하여 전기 비저항 탐사(쌍극자 탐사)와 VLF 탐사를 수행하였다. 양산탄층 추정선을 가로질러 4개의 측선에 걸쳐 실시한 전기 비저항 탐사 결과 단층선을 경계로 주로 동측에는 고비저항대가 서측에는 저비저항대가 나타난다. 이는 수직운동성분이 포함된 주향이동 단층운동에 의해 동측 기반암 블록이 상대적으로 상승한 결과로 사료된다. 파쇄대와 밀접하게 관련되어 나타나는 VLF 자료의 0점 통과점과 지전기적 저-고 비저항대 경계부는 양산단층의 제 4기 단층운동 추정선과 거의 일치하게 나타난다. 저비저항대가 지표에서 거의 수직으로 나타나는 것으로 보아 본 연구 지역의 예상 단층선을 통과하는 양산단층은 단층 양측이 10m 이상의 기반암의 깊이 차이를 나타내며 고각의 경사를 지닌 단층으로 추정된다.

• Genomics & Informatics
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• 제15권1호
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• pp.28-37
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• 2017

Obesity is a highly prevalent, chronic disorder that has been increasing in incidence in young patients. Both epigenetic and genetic aberrations may play a role in the pathogenesis of obesity. Therefore, in-depth epigenomic and genomic analyses will advance our understanding of the detailed molecular mechanisms underlying obesity and aid in the selection of potential biomarkers for obesity in youth. Here, we performed microarray-based DNA methylation and gene expression profiling of peripheral white blood cells obtained from six young, obese individuals and six healthy controls. We observed that the hierarchical clustering of DNA methylation, but not gene expression, clearly segregates the obese individuals from the controls, suggesting that the metabolic disturbance that occurs as a result of obesity at a young age may affect the DNA methylation of peripheral blood cells without accompanying transcriptional changes. To examine the genome-wide differences in the DNA methylation profiles of young obese and control individuals, we identified differentially methylated CpG sites and investigated their genomic and epigenomic contexts. The aberrant DNA methylation patterns in obese individuals can be summarized as relative gains and losses of DNA methylation in gene promoters and gene bodies, respectively. We also observed that the CpG islands of obese individuals are more susceptible to DNA methylation compared to controls. Our pilot study suggests that the genome-wide aberrant DNA methylation patterns of obese individuals may advance not only our understanding of the epigenomic pathogenesis but also early screening of obesity in youth.

• Nuclear Engineering and Technology
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• 제54권8호
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• pp.3027-3033
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• 2022

Background: In this study, various types of deep-learning models for predicting in vitro radiosensitivity from gene-expression profiling were compared. Methods: The clonogenic surviving fractions at 2 Gy from previous publications and microarray gene-expression data from the National Cancer Institute-60 cell lines were used to measure the radiosensitivity. Seven different prediction models including three distinct multi-layered perceptrons (MLP), four different convolutional neural networks (CNN) were compared. Folded cross-validation was applied to train and evaluate model performance. The criteria for correct prediction were absolute error < 0.02 or relative error < 10%. The models were compared in terms of prediction accuracy, training time per epoch, training fluctuations, and required calculation resources. Results: The strength of MLP-based models was their fast initial convergence and short training time per epoch. They represented significantly different prediction accuracy depending on the model configuration. The CNN-based models showed relatively high prediction accuracy, low training fluctuations, and a relatively small increase in the memory requirement as the model deepens. Conclusion: Our findings suggest that a CNN-based model with moderate depth would be appropriate when the prediction accuracy is important, and a shallow MLP-based model can be recommended when either the training resources or time are limited.

• 지구물리
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• 제2권3호
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• pp.209-216
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• 1999

전라북도 남원군과 전라남도 곡성군을 경계로 흐르고 있는 섬진강의 남서쪽 강변에서 관로 매설에 필요한 지질정보 파악을 위한 굴절파 탐사를 실시하였다. 인라인 굴절법에 앞서 수행한 지오폰 간격 1 m, 오프셋 구간 -36∼+36 m의 워커웨이 자료로부터, 평균속도 585 m/s의 마른 토사층 하부에 평균 1,326 m/s의 속도를 갖는 젖은 사력층이 거의 수평 상태로 놓여 있으며, 그 하부에는 평균 4,218 m/s의 속도를 갖는 기반암이 분포하는 것으로 분석된다. 지오폰 간격 2 m로 획득한 총 220 m의 굴절파 측선자료를 GRM (Generalized Reciprocal Method) 방법으로 해석한 결과, 평균속도가 688 m/s, 1,473 m/s, 3,776 m/s인 3개 지층이 인지되며, 리핑이 불가능할 것으로 판단되는 기반암까지의 깊이는 숨은 층(hidden layer)의 영향에 따라 최소 1.51∼2.43 m부터 최대 2.25∼3.54 m까지로 구해진다. 이 지역 자료는 굴절법의 전형적인 문제점인 숨은 층 존재로 인하여 2번째 층의 두께를 정확히 계산하는데 어려움이 있다.

• Current Photovoltaic Research
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• 제4권1호
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• pp.21-24
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• 2016

Chalcopyrite based (CIGS) thin films have considered to be a promising candidates for industrial applications. The growth of quality CIGS thin films without secondary phases is very important for further efficiency improvements. But, the identification of complex secondary phases present in the entire film is crucial issue due to the lack of powerful characterization tools. Even though X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and normal Raman spectroscopy provide the information about the secondary phases, they provide insufficient information because of their resolution problem and complexity in analyzation. Among the above tools, a normal Raman spectroscopy is better for analysis of secondary phases. However, Raman signal provide the information in 300 nm depth of film even the thickness of film is > $1{\mu}m$. For this reason, the information from Raman spectroscopy can't represent the properties of whole film. In this regard, the authors introduce a new way for identification of secondary phases in CIGS film using depth Raman analysis. The CIGS thin films were prepared using DC-sputtering followed by selenization process in 10 min time under $1{\times}10^{-3}torr$ pressure. As-prepared films were polished using a dimple grinder which expanded the $2{\mu}m$ thick films into about 1mm that is more than enough to resolve the depth distribution. Raman analysis indicated that the CIGS film showed different secondary phases such as, $CuIn_3Se_5$, $CuInSe_2$, InSe and CuSe, presented in different depths of the film whereas XPS gave complex information about the phases. Therefore, the present work emphasized that the Raman depth profile tool is more efficient for identification of secondary phases in CIGS thin film.

• Genomics & Informatics
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• 제10권1호
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• pp.1-8
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• 2012

Recently, the technologies of DNA sequence variation and gene expression profiling have been used widely as approaches in the expertise of genome biology and genetics. The application to genome study has been particularly developed with the introduction of the nextgeneration DNA sequencer (NGS) Roche/454 and Illumina/ Solexa systems, along with bioinformation analysis technologies of whole-genome $de$ $novo$ assembly, expression profiling, DNA variation discovery, and genotyping. Both massive whole-genome shotgun paired-end sequencing and mate paired-end sequencing data are important steps for constructing $de$ $novo$ assembly of novel genome sequencing data. It is necessary to have DNA sequence information from a multiplatform NGS with at least $2{\times}$ and $30{\times}$ depth sequence of genome coverage using Roche/454 and Illumina/Solexa, respectively, for effective an way of de novo assembly. Massive shortlength reading data from the Illumina/Solexa system is enough to discover DNA variation, resulting in reducing the cost of DNA sequencing. Whole-genome expression profile data are useful to approach genome system biology with quantification of expressed RNAs from a wholegenome transcriptome, depending on the tissue samples. The hybrid mRNA sequences from Rohce/454 and Illumina/Solexa are more powerful to find novel genes through $de$ $novo$ assembly in any whole-genome sequenced species. The $20{\times}$ and $50{\times}$ coverage of the estimated transcriptome sequences using Roche/454 and Illumina/Solexa, respectively, is effective to create novel expressed reference sequences. However, only an average $30{\times}$ coverage of a transcriptome with short read sequences of Illumina/Solexa is enough to check expression quantification, compared to the reference expressed sequence tag sequence.

• 한국화재소방학회논문지
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• 제22권5호
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• pp.43-47
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• 2008

최근에 이차이온질량분석기(Secondary Ion Mass Spectrometry)를 이용한 1 2차 용융흔 구별에 관한 연구가 많은 관심을 끌고 있다. 동선의 깊이 분포에 따른 $^{12}C^-$, $^{63}Cu^-$, $^{18}O^-$, $^{35}Cl^-$ 이차 이온을 검출하기 위해 Cs+ 일차 이온빔을 사용하였고, 본 논문에서는 과전류에 의한 동선의 열적 확산에 대해 분석하였다. 분석결과 PVC 절연피복이 덮인 동선이 보다 더 깊이 탄소와 염소가 확산함을 보였으나, 산소는 절연피복이 덮이지 않은 동선이 더 깊이 확산된 것을 보였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.43.1-43.1
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• 2018

Spatial distribution of binding state in depth direction is investigated in a hard skin layer on soft polydimethylsiloxane (PDMS) fabricated by Ar ion beam irradiations. The hard skin layer known as a silica-like homogenous layer was composed of two layers. Impinging Ar ions transfer energy to PDMS as a function of collisional energy transfer rate, which is the maximum at surface and decreases gradually as an ion penetrates. This formed the heterogeneous hard skin layer that consists of a top-most layer and an intermediate layer. XPS depth profiling showed the existence of the top-most layer and intermediate layer. In the top-most layer, scission and cross-linking were occurred simultaneously and Si-O bond showed dissociated status, SiOx (x = 1.25 - 1.5). Under the top-most layer, there was the intermediate layer in which cross-linking is mainly occurred and Si-O bond showed silica-like binding status, SiOx (x = 1.75 - 2). And theoretical analysis which calculates the collisional energy transfer and a displacement per atom explained the thickness variation of top-most layer according to Ar ion energy from 360 eV to 840 eV.

• 한국표면공학회지
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• 제52권6호
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• pp.342-349
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• 2019

Titanium nitride(TiN) thin films have been deposited on PEN(Polyethylene naphthalate) substrate by reactive RF(13.56 MHz) magnetron sputtering in a 25% N₂/Ar mixed gas atmosphere. The pulsed DC bias voltage of -50V on substrates was applied with a frequency of 350 kHz, and duty ratio of 40%(1.1 ㎲). The effects of pulsed DC substrate bias voltage on the crystallinity, color, electrical properties of TiN_x films have been investigated using XRD, SEM, XPS and measurement of the electrical properties such as electrical conductivity, carrier concentration, mobility. The deposition rates of TiN_x films was decreased with application of the pulsed DC substrate bias voltage. The TiN_x films deposited without and with pulsed bias of -50V to substrate exhibits gray and gold colors, respectively. XPS depth profiling revealed that the introduction of the substrate bias voltage resulted in decreasing oxygen concentration in TiN_x films, and increasing the electrical conductivities, carrier concentration, and mobility to about 10 times, 5 times, and 2 times degree, respectively.