Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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A Study on Reaction Stability Between Nickel and Side-wall Materials With Silicidation Temperature

니켈실리사이드 제조온도에 따른 측벽물질과의 반응안정성 연구

  • An, Yeong-Suk (Dept. of Material Science and Eng., University of Seoul) ;
  • Song, Oh-Sung (Dept. of Material Science and Eng., University of Seoul)
  • 안영숙 (서울시립대학교 재료공학과) ;
  • 송오성 (서울시립대학교 재료공학과)
  • Published : 2001.02.01
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Abstract

The reaction stability of nickel with side-wall materials of SiO$_2$ and Si$_3$N$_4$ on p-type 4"(100) Si substrate were investigated. Ni on 1300 $\AA$ thick SiO$_2$ and 500 $\AA$ - thick Si$_3$N$_4$ were deposited. Then the samples were annealed at 400, 500, 750 and 100$0^{\circ}C$ for 30min, and the residual Ni layer was removed by a wet process. The interface reaction stability was probed by AES depth Profiling. No reaction was observed at the Ni/SiO$_2$ and Ni/Si$_3$N$_4$, interfaces at 400 and 50$0^{\circ}C$. At 75$0^{\circ}C$, no reaction occurred at Ni/SiO$_2$ interface, while $NiO_x$ and Si$_3$N$_4$ interdiffused at Ni/Si$_3$N$_4$ interface. At 100$0^{\circ}C$, Ni layers on SiO$_2$ and Si$_3$N$_4$ oxidized into $NiO_x$ and then $NiO_x$ interacted with side-wall materials. Once $NiO_x$ was formed, it was not removed in wet etching process and easily diffused into sidewall materials, which could lead to bridge effect of gate-source/drain.

Keywords

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