• Journal of Sensor Science and Technology
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• v.22 no.4
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• pp.244-248
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• 2013

The discovery of a two-dimensional electron gas (2DEG) in $LaAlO_3$ (LAO)/$SrTiO_3$ (STO) heterostructure has stimulated intense research activity. We suggest a new structure model based on $KNbO_3$ (KNO) material. The KNO thin films were grown on $TiO_2$-terminated STO substrates as a p-type structure ($NbO_2/KO/TiO_2$) to form a two-dimensional hole gas (2DHG). The STO thin films were grown on KNO/$TiO_2$-terminated STO substrates as an n-type structure to form a 2DEG. Oxygen pressure during the deposition of the KNO and STO thin films was changed so as to determine the effect of oxygen vacancies on 2DEGs. Our results showed conducting behavior in the n-type structure and insulating properties in the p-type structure. When both the KNO and STO thin films were deposited on a $TiO_2$-terminated STO substrate at a low oxygen pressure, the conductivity was found to be higher than that at higher oxygen pressures. Furthermore, the heterostructure formed at various oxygen pressures resulted in structures with different current values. An STO/KNO heterostructure was also grown on the STO substrate, without using the buffered oxide etchant (BOE) treatment, so as to confirm the effects of the polar catastrophe mechanism. An STO/KNO heterostructure grown on an STO substrate without BOE treatment did not exhibit conductivity. Therefore, we expect that the mechanics of 2DEGs in the STO/KNO heterostructures are governed by the oxygen vacancy mechanism and the polar catastrophe mechanism.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.11 no.3
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• pp.253-257
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• 2013

Geology, hydrogeology, and geochemistry are the main technical siting factors of a geological repository for spent nuclear fuels. This paper evaluated the siting criteria of overseas geological repository with related to hydrogeologic properties, such as hydraulic conductivity, partitioning coefficient, dispersion coefficient, boundary condition, and water age. Each country establishes the siting criteria based on its important geological backgrounds and information, and social environment. For example, Sweden and Finland that have decided a crystalline rock as a host rock of a geological repository show different siting criteria for hydraulic conductivity. In Sweden, it is preferable to avoid area where the hydraulic conductivity on a deposition hole scale (~30m) exceeds $10^{-8}m/s$, whereas Finland does not decide any criterion for the hydraulic conductivity because of limited data for it. In addition, partitioning coefficients should be less than 10-1 of average value in Swedish crystalline bedrock. However, the area where shows 100 times less than average partitioning coefficients of radionuclides in crystalline rock should be avoided in Sweden. In German, the partitioning coefficients for the majority of the long-term-relevant radionuclides should be greater than or equal to $0.001m^3/kg$. Therefore, it is strongly required to collect much and exact information for the hydrogeologic properties in order to set up the siting criteria.

• Applied Chemistry for Engineering
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• v.16 no.6
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• pp.768-771
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• 2005

The deposition of silicon nitride ($SiN_x$) thin films was carried out on $SiO_2/Si$ substrate at room temperature by reactive dc magnetron sputtering. The analysis of deposited $SiN_x$ films using x-ray photoelectron spectroscopy indicated that the composition of $SiN_x$ films was Si-rich. The deposited $SiN_x$ thin films were annealed by varying annealing temperature and time. X-ray diffraction (XRD) analysis was performed in order to examine the crystallization of Si in $SiN_x$ thin films. The optical and electrical properties of $SiN_x$ thin films were measured for the observation of Si nanodot. As a result, we observed the XRD peaks that might be the Si crystals. As the annealing time and annealing temperature increased, the photoluminescence intensity of $SiN_x$ films gradually increased. The capacitance-voltage characteristics of $SiN_x$ film measured before and after annealing indicated that the trap effect of electrons or holes occurred due to the existence Si nanodots in the $SiN_x$ thin films.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.17 no.1
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• pp.75-94
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• 2019

As the present single-layer repository concept requires too large an area for the site of the repository, a multi-layer repository concept has been suggested to improve the disposal density. The effects of the excavation damaged zone around the multi-layer repository constructed in the deep host rock on the temperature distribution in the repository were analyzed. For the thermal analysis of the multi-layer repository, the hydrothermal model was used to consider the resaturation process occurring in the buffer, backfill and rock. The existence of an excavation damaged zone has a significant effect on the temperature distribution in the repository, and the maximum peak temperatures of double-layer and triple-layer repositories can rise to $7^{\circ}C$ and $12^{\circ}C$, respectively depending on the size of the excavation damaged zone and the degree of decrease of the thermal conductivity. The dominant factor affecting the peak temperature in the multi-layer repository is the decrease of thermal conductivity in the excavation damaged zone, and the excavation damaged zone formed around the deposition hole has more significant effects on the peak temperature than does the excavation damaged zone formed around the disposal tunnel.

• Tunnel and Underground Space
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• v.32 no.1
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• pp.59-77
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• 2022

Currently, the design reference temperature of the buffer material for disposing of high-level radioactive waste is less than 100℃, so if the heat dissipation capacity of the buffer material is improved, the spacings of the disposal tunnel and the deposition hole in the repository can be reduced. First of all, this study tries to analyze the criteria for thermal-hydraulic-mechanical performance of the buffer materials and to investigate the researches regarding the enhanced buffer materials with improved thermal conductivity. First, the thermal conductivity should be as high as possible and is affected by dry density, water content, temperature, mineral composition, and bentonite type. the organic content of the buffer material can have a significant effect on the corrosion performance of a canister, so the organic content should be low. In addition, hydraulic conductivity of the buffer material should be less than that of near-field rock and swelling pressure should be appropriate for buffer materials to function properly. For the development of enhanced buffer materials, additives such as sand, graphite, and graphite oxide are typically used, and a thermal conductivity can be greatly improved with a very small amount of graphite addition compared to sand.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).