• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.247-253
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• 2003

In this study, a numerical analysis of the deposition of gallium arsenide from TMGa and arsine in a horizontal MOCVD reactor is performed to investigate the effect of inlet diffuser shape of reactor on the flow and deposition characteristics. The effects of two geometric parameters (diffuser angle, diffuser shape) on the growth rate, growth rate uniformity, flow uniformity and pressure loss are presented. As a results, it is found that the optimum linear diffuser angle is in the range of $50^{\circ}$∼$55^{\circ}$ and parabolic diffuser in the range of $40^{\circ}$∼$45^{\circ}$ from the viewpoint of growth rate uniformity, flow uniformity and average growth rate. It is also found that variation of diffuser angle has greater impact on growth rate uniformity than average growth rate particularly in parabolic diffuser.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.31 no.3 s.258
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• pp.225-233
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• 2007

The growth of GaN on the patterned substances has proven favorable to achieve thick, crack-free GaN layers. In this paper, numerical modeling of transport and reaction of species is performed to estimate the growth rate of GaN from tile reaction of TMG(trimethly-gallium) and ammonia. GaN growth rate was estimated through the model analysis including the effect of species velocity, thermal convection and chemical reaction, and thermal condition for the uniform deposition was to be presented. The effect of shape and construction of microscopic pattern was also investigated using a simulator to perform surface analysis, and a review was done on the quantitative thickness and shape in making GaN layer on the pattern. Quantitative analysis was especially performed about the shape of reactor geometry, periodicity of pattern and flow conditions which decisively affect the quality of crystal growth. It was found that the conformal deposition could be obtained with the inclination of trench ${\Theta}>125^{\circ}$. The aspect ratio was sensitive to the void formation inside trench and the void located deep in trench with increased aspect ratio.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.796-799
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• 2002

BSCCO thin films are fabricated via a co-deposition process at an ultra-low growth rate using ion beam sputtering. The sticking coefficient of Bi element exhibits a characteristic temperature dependence. This temperature dependence of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of Bi$_2$O$_3$.

• Journal of the Korean institute of surface engineering
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• v.46 no.1
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• pp.29-35
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• 2013

The effect of DC bias on the growth of nanocrystalline diamond films on silicon substrate by microwave plasma chemical vapor deposition has been studied varying the substrate temperature (400, 500, 600, and $700^{\circ}C$), deposition time (0.5, 1, and 2h), and bias voltage (-50, -100, -150, and -200 V) at the microwave power of 1.2 kW, working pressure of 110 torr, and gas ratio of Ar/1%$CH_4$. In the case of low negative bias voltages (-50 and -100 V), the diamond particles were observed to grow to thin film slower than the case without bias. Applying the moderate DC bias is believed to induce the bombardment of energetic carbon and argon ions on the substrate to result in etching the surfaces of growing diamond particles or film. In the case of higher negative voltages (-150 and -200 V), the growth rate of diamond film increased with the increasing DC bias. Applying the higher DC bias increased the number of nucleation sites, and, subsequently, enhanced the film growth rate. Under the -150 V bias, the height (h) of diamond films exhibited an $h=k{\sqrt{t}}$ relationship with deposition time (t), where the growth rate constant (k) showed an Arrhenius relationship with the activation energy of 7.19 kcal/mol. The rate determining step is believed to be the surface diffusion of activated carbon species, but the more subtle theoretical treatment is required for the more precise interpretation.

• Asian-Australasian Journal of Animal Sciences
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• v.13 no.8
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• pp.1147-1153
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• 2000

A total of 9,540 pigs were evaluated for their growth performance to provide information on the development of different feeding strategies to support maximum rate of protein deposition (PD). Large variations in growth performance and protein deposition rate were found in the population used in this study (ADG from 701 to 974 g/day; ADFI from 1,726 to 2,498 g/day; Feed/gain from 2.10 to 2.90; Backfat thickness from 12.4 to 20.5 mm and PD rate from 103 to 153 g/day). It was found that ADG was positively correlated to PD ($R^2=0.9362$, p<0.0001) while FCR was negatively correlated to PD ($R^2=0.4031$, p<0.0001). Backfat thickness was negatively correlated to PD ($R^2=0.7024$, p<0.0001) and to ADG ($R^2=0.5096$, p<0.0001). The estimated lysine requirement based on PD rate also showed large variation (12.37 to 18.38 g/day true ileal digestible lysine on average between 25 and 100 kg), thus strongly indicated the need of separate feeding strategies for each group of pigs. When pigs were divided into three categories according to estimated whole body PD rate, the group of pigs with the highest PD rate grew faster by 6.3 and 13.9% than pigs with intermediate and low PD rate, respectively. Feed utilization was also more efficient in pigs with a high PD rate. It appeared that pigs with high PD rate maintained higher PD rate especially in the later stage of their life. Pigs with high PD rate require an extra amount of 1.2 and 2.4 g/true digestible lysine per day and 0.4 and 0.8% more lysine in the diet than pigs with intermediate and low PD rate during the growing-finishing period respectively. Results of this study suggest that there is a need for separate feeding strategies for individual group of pigs with different PD rate. It should be noted that average value for each group presented in this report is not the adequate amount for an animals potential for maximum PD rate. With recent development in growth modeling and access to computer technologies to facilitate computation, pork producers can easily estimate pigs protein deposition rate and thus can make their own feeding strategies.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.97-97
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• 2000

In this thesis, the metastable state diamond thin films have been deposited on Si substrates from methane-hydrogen and oxygen mixture using Microwave Plasma Enhanced Chemical Vapor deposition (MWPCVD) method. Effects of each experimental parameters of MWPCVD including methane concentrations, oxygen additions, operating pressure, deposition time, etc. on the growth rate and crystallinity were investigated. SEM, XRD, and Raman spectroscopy were employed to analyze the growth rate and morphology, crystallinity and prefered growth direction, and relative amounts of diamond and non-diamond phases respectively. As a methane concentration below 4%, the deposited films having well-defined facets could be obtained. As the methane concentration increases over 4%, the shape of films gradually changed into a amorphos form. The best crystallinity of the film at 3% in the Raman spectroscopy. Addition of oxygen to the methane-hydrogen mixture gave an improved film crystallinity at 50% oxygen concentration due to its more effectiveness in the selective removal of the non-diamond phased compared to the of H atom. on the contrary, the growth rate generally decreased by oxygen to from the more stable CO and CO2 is responsible for such an effect. Upon increasing the operating pressure and time, increased of growth rate and crystallinity were increased simultaneously.

• ETRI Journal
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• v.27 no.1
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• pp.118-121
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• 2005

Silicon dioxide ($SiO_2$) films prepared by plasma-enhanced atomic-layer deposition were successfully grown at temperatures of $100\;to\;250^{\circ}C$, showing self-limiting characteristics. The growth rate decreases with an increasing deposition temperature. The relative dielectric constants of $SiO_2$ films are ranged from 4.5 to 7.7 with the decrease of growth temperature. A $SiO_2$ film grown at $250^{\circ}C$ exhibits a much lower leakage current than that grown at $100^{\circ}C$ due to its high film density and the fact that it contains deeper electron traps.

• Journal of Integrative Natural Science
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• v.11 no.4
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• pp.209-211
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• 2018

A zinc oxide thin film doped with aluminum was deposited by RF sputtering. The deposition temperature of the sputter chamber was kept constant at $350^{\circ}C$, the power supplied to the chamber was 75 W, the oxygen flow rate was changed to 10 sccm and 20 sccm, and the thin film deposition time was changed to 120 and 180 minutes. The structures of the deposited zinc oxide thin films were analyzed by van der Waals method using an X-ray diffractometer. As a result of X-ray diffraction, the amount of oxygen supplied to the zinc oxide thin film increased, and the surface growth of the (002), (400), (110), and (103) planes showed a change with increasing deposition time. Moreover, as the amount of oxygen supplied to the zinc oxide thin film increased, their shape was observed to be coarse, and the thin film' s particles shape was correlated with the oxygen chemical defect introduced.

• Journal of Ecology and Environment
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• v.36 no.1
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• pp.31-38
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• 2013

Annual ring formation is considered a source of information to investigate the effects of environmental changes caused by temperature, air pollution, and acid rain on tree growth. A comparative investigation of annual ring growth of Cryptomeria japonica in relation to environmental changes was conducted at two sites in southern Korea (Haenam and Jangseong). Three wood disks from each site were collected from stems at breast height and annual ring growth was analyzed. Annual ring area at two sites increased over time (p > 0.05). Tree ring growth rate in Jangseong was higher than that in Haenam. Annual ring area increment in Jangseong was more strongly correlated with environmental variables than that in Haenam; annual ring growth increased with increasing temperature (p < 0.01) and a positive effect of $NO_2$ concentration on annual ring area (p < 0.05) could be attributed to nitrogen deposition in Jangseong. The correlation of annual ring growth increased with decreasing $SO_2$ and $CO_2$ concentrations (p < 0.01) in Jangseong. Variation in annual growth rings in Jangseong could be associated with temperature changes and N deposition. In Haenam, annual ring growth was correlated with $SO_2$ concentration (p < 0.01), and there was a negative relationship between precipitation pH and annual ring area (p < 0.01) which may reflect changes in nutrient cycles due to the acid rain. Therefore, the combined effects of increased $CO_2$, N deposition, and temperature on tree ring growth in Jangseong may be linked to soil acidification in this forest ecosystem. The interactions between air pollution ($SO_2$) and precipitation pH in Haenam may affect tree growth and may change nutrient cycles in this site. These results suggested that annual tree ring growth in Jangseong was more correlated with environmental variables than that in Haenam. However, the further growth of C. japonica forest at two sites is at risk from the long-term effects of acid deposition from fossil fuel combustion.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.314-316
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• 1997

We have studied the epitaxial growth and electrical properties of $Si_{0.8}Ge_{0.2}$, films on Si substrates at $550^{\circ}C$ by LPCVD. In a low $PH_3$, partial pressure region such as below 1.25 mPa, the phosphorus doping concentration increased proportionally with increasing $PH_3$ partial pressure while the deposition rate and the Ge fraction x were constant. In a higher $PH_3$ partial pressure region, the phosphorus doping concentration and the deposition rate decreased, while the Ge fraction slightly increased. The dependence of P incorporation rate on the $PH_3$ partial pressure was similar to the phosphorus doping concentration. According to test results, it suggests that high surface coverage of phosphorus atoms suppress both the $SiH_4$ adsorption/reaction and the $GeH_4$ adsorption/reaction on the surfaces, and the effect is more stronger on $SiH_4$ than on $GeH_4$. In a higher $PH_3$ partial pressure region, the deposition is largely controlled by surface coverage effect of phosphorus atoms.