Transactions of the Korean Society of Mechanical Engineers B (대한기계학회논문집B)

The Korean Society of Mechanical Engineers (대한기계학회)
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Characteristic of GaN Growth on the Periodically Patterned Substrate for Several Reactor Configurations

반응로 형상에 따른 주기적으로 배열된 패턴위의 GaN 성장 특성

  • 강성주 (전북대학교 대학원 정밀기계공학과) ;
  • 김진택 (전북대학교 자동차신기술연구센터) ;
  • 박복춘 (전북대학교 기계항공시스템공학부) ;
  • 이철로 (전북대학교 신소재공학부) ;
  • 백병준 (전북대학교 기계항공시스템공학부 자동차신기술연구센터)
  • Published : 2007.03.01
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Abstract

The growth of GaN on the patterned substances has proven favorable to achieve thick, crack-free GaN layers. In this paper, numerical modeling of transport and reaction of species is performed to estimate the growth rate of GaN from tile reaction of TMG(trimethly-gallium) and ammonia. GaN growth rate was estimated through the model analysis including the effect of species velocity, thermal convection and chemical reaction, and thermal condition for the uniform deposition was to be presented. The effect of shape and construction of microscopic pattern was also investigated using a simulator to perform surface analysis, and a review was done on the quantitative thickness and shape in making GaN layer on the pattern. Quantitative analysis was especially performed about the shape of reactor geometry, periodicity of pattern and flow conditions which decisively affect the quality of crystal growth. It was found that the conformal deposition could be obtained with the inclination of trench ${\Theta}>125^{\circ}$. The aspect ratio was sensitive to the void formation inside trench and the void located deep in trench with increased aspect ratio.

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References

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