Numerical study of the influence of inlet shape design of a horizontal MOCVD reactor on the characteristics of epitaxial layer growth |
정수진
(동해대학교 자동차공학과)
김소정 (동해대학교 전기전자공학과) |
1 |
The importance of predicting rate-limited growth for accurate modeling of commercial MOCVD reactors
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DOI |
2 |
Three-dimensional flow effects in silicon CVD in horizontal reactors
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3 |
Three-dimensional modeling of horizontal chemical vapor deposition Ⅰ. MOCVD at atmospheric pressure
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DOI ScienceOn |
4 |
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5 |
Numerical study of transport phenomena in MOCVD reactors using a finite volume multigrid solver
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DOI ScienceOn |
6 |
Optimization of a horizontal MOCVD reactor for uniform epitaxial layer growth
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DOI ScienceOn |
7 |
A new inlet area design for horizontal MOVPE reactors
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DOI ScienceOn |
8 |
Numerical analysis of the growth of GaN layer in MOCVD reactor
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DOI |
9 |
A finite volum method for the prediction of three-dimensional fluid flow in complex ducts
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10 |
Analysis of gallium arsenide deposition in a horizontal chemical vapor deposition reactor using massively parallel computations
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DOI ScienceOn |
11 |
Numerical study of the influence of reactor design on MOCVD with a comparison to experimental data
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DOI ScienceOn |