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Numerical study of the influence of inlet shape design of a horizontal MOCVD reactor on the characteristics of epitaxial layer growth  

정수진 (동해대학교 자동차공학과)
김소정 (동해대학교 전기전자공학과)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.13, no.5, 2003 , pp. 247-253 More about this Journal
Abstract
In this study, a numerical analysis of the deposition of gallium arsenide from TMGa and arsine in a horizontal MOCVD reactor is performed to investigate the effect of inlet diffuser shape of reactor on the flow and deposition characteristics. The effects of two geometric parameters (diffuser angle, diffuser shape) on the growth rate, growth rate uniformity, flow uniformity and pressure loss are presented. As a results, it is found that the optimum linear diffuser angle is in the range of $50^{\circ}$∼$55^{\circ}$ and parabolic diffuser in the range of $40^{\circ}$∼$45^{\circ}$ from the viewpoint of growth rate uniformity, flow uniformity and average growth rate. It is also found that variation of diffuser angle has greater impact on growth rate uniformity than average growth rate particularly in parabolic diffuser.
Keywords
MOCVD; CFD (Computational Fluid Dynamics); Growth rate uniformity; Flow uniformity;
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